TW578180B - Sintered metal flakes - Google Patents

Sintered metal flakes Download PDF

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Publication number
TW578180B
TW578180B TW091124081A TW91124081A TW578180B TW 578180 B TW578180 B TW 578180B TW 091124081 A TW091124081 A TW 091124081A TW 91124081 A TW91124081 A TW 91124081A TW 578180 B TW578180 B TW 578180B
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Taiwan
Prior art keywords
heat transfer
transfer material
metal sheet
patent application
item
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TW091124081A
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Chinese (zh)
Inventor
Ignatius J Rasiah
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Honeywell Int Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/11—Making porous workpieces or articles
    • B22F3/1103—Making porous workpieces or articles with particular physical characteristics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Abstract

A porous, flexible, resilient heat transfer material which comprises network of metal flakes. Such heat transfer materials are preferably produced by first forming a conductive paste comprising a volatile organic solvent and conductive metal flakes. The conductive paste is heated to a temperature below the melting point of the metal flakes, thereby evaporating the solvent and sintering the flakes only at their edges. The edges of the flakes are fused to the edges of adjacent flakes such that open pores are defined between at least some of the adjacent flakes, thereby forming a network of metal flakes. This network structure allows the heat transfer material to have a low storage modulus of less than about 10 GPa, while having good electrical resistance properties.

Description

578180 A7 B7 五、發明説明（i ) 發明背景 發明領域 本發明係關於電路板及積體電路封裝之製造。尤其，本發 明關於積體電路封裝之低儲存模數、導電熱介面。 相關技藝之敘述 積體電路為習知之工業產品，且廣用於商業及消費性電 子產品中。尤其適用於大尺寸之應用，如工業控制設備、以 及小尺寸之設備電話、收音機、及個人電腦。 由於電子產品之需求持續增加，因此需要在較快速度下 操作、空間小且提供更多功能之電器系統。為符合該需求， 廠商設計出含有許多相對緊靠之電器組件之電器及電子裝 置。此等組件會產生大量之熱，需要以某些設備去除，以避 免裝置不作動或故障。 傳統上，電子組件已在裝置之外殼中使用空氣之強制或 對流循環冷卻。冷卻風扇通常為電子裝置之整體部份或分 開裝置於其上，已增加暴露於空氣流之積體電路封裝之表 面積。該風扇係用於增加在裝置之外殼中循環之空氣之體 積。美國專利第5,522,700號教示使用一般風扇裝置，使電子 組件散熱。美國專利第5，166,775號敘述一種與積體電路相鄰 裝置，將空氣直接噴射於裝置於電路上之電子裝置之空氣 歧管。空氣歧管具偶空氣輸入口以及許多沿著溝槽配置，將 空氣引導於電子裝置之上之輸出噴嘴。 不幸的，电色積體之^之持度變」上，但功率密度增加 ，因此簡單的_空氣微環通^不足i適當的冷卻電路組件。超 -- — · *— —·-· — **·- ~ -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 裝 訂578180 A7 B7 V. Description of the Invention (i) Background of the Invention Field of the Invention The present invention relates to the manufacture of circuit boards and integrated circuit packages. In particular, the invention relates to a low storage modulus, conductive thermal interface for integrated circuit packages. Description of related technologies Integrated circuits are well-known industrial products and are widely used in commercial and consumer electronics. It is especially suitable for large-sized applications, such as industrial control equipment, and small-sized equipment phones, radios, and personal computers. As the demand for electronic products continues to increase, there is a need for electrical systems that operate at faster speeds, have less space, and provide more functions. To meet this demand, manufacturers design electrical and electronic devices that contain many relatively close electrical components. These components generate a large amount of heat and need to be removed with some equipment to prevent the unit from malfunctioning or malfunctioning. Traditionally, electronic components have been cooled by forced or convective circulation using air in the enclosure of the device. The cooling fan is usually an integral part of or separate from the electronic device, which has increased the surface area of the integrated circuit package exposed to the air flow. The fan is used to increase the volume of air circulating in the enclosure of the device. U.S. Patent No. 5,522,700 teaches the use of general fan devices to dissipate electronic components. U.S. Patent No. 5,166,775 describes a device adjacent to an integrated circuit that injects air directly to an air manifold of an electronic device mounted on the circuit. The air manifold has an air inlet and a number of output nozzles arranged along the groove to direct air above the electronics. Unfortunately, the persistence of the electrochromic product has changed, but the power density has increased, so simple air circulation is not enough to properly cool the circuit components. Super-— · * — — ·-· — ** ·-~ -4-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding

過2氣循環達成之散熱可藉由在電子組件上附接散熱器或 其他散熱裝置達成。美國專利第4,62〇,216號敘述一 種具有許 多冷郃鰭片之半導體封裝用之單一散熱器，該散熱器係用 於冷卻向密度積體電路模組。美國專利第5,535,〇94號教示將 吹風機及散熱器併用。其教示一種模組，該模組具有冷卻積 祖電路封裝之整合吹風機。該吹風機附接於裝置在積體電 路封裝上之散熱器上。積體電路產生之熱傳導至散熱器。吹 風機產生空氣流，流經該散熱器並自封裝移除熱。 使用熱或電介面將該散熱裝置黏接於發熱組件上為技藝 中已知。然而，一般之介面已知有許多缺點。半導體工業中 所用之介面一般包括金屬介面或充填導電填料之聚合物黏 著劑。金屬介面如提供低電阻但具有高儲存模數，且不適用 於大1C片之焊接料、銀及金。另外，聚合物黏著劑之模數可 極低’但其電阻太咼。當晶片之發熱量過高時，積體電路之 封裝或半導體片需要熱介面，該熱介面具有低模數以極高 導熱性及導電性。亦需要在低溫如約200 更低溫下可組裝 且加工之該介面。 本發明提供一種解決該問題之方案。依據本發明，係形成 一種多孔性、可撓、彈性熱傳材料，該材料包括金屬片之網 狀物。該熱傳材料較好係藉由先形成包括揮發性有機溶劑 及導電金屬片之導電糊料。將導電糊料加熱至低於金屬片 熔點之溫度，因而使溶劑蒸發且僅燒結金屬片之邊緣。金屬 片之邊緣與相鄰金屬片之邊緣融合，使得在至少部分相鄰 金屬片之間界定出開口之孔隙’因而形成金屬片網狀物。該 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) ' ' --- 裝- 訂Heat dissipation through 2 air cycles can be achieved by attaching a heat sink or other heat sink to the electronic components. U.S. Patent No. 4,62,216 describes a single heat sink for a semiconductor package having many cold-headed fins. The heat sink is used to cool a dense density integrated circuit module. U.S. Patent No. 5,535,094 teaches the use of a hair dryer and a radiator. It teaches a module with an integrated blower that cools the ancestral circuit package. The hair dryer is attached to a heat sink mounted on the integrated circuit package. The heat generated by the integrated circuit is conducted to the heat sink. A blower generates a stream of air that flows through the heat sink and removes heat from the package. It is known in the art to use a thermal or electrical interface to adhere the heat sink to the heat generating component. However, the general interface is known to have many disadvantages. Interfaces used in the semiconductor industry generally include metal interfaces or polymer adhesives filled with conductive fillers. Metal interfaces, such as those with low resistance but high storage modulus, are not suitable for solders, silver and gold of large 1C chips. In addition, the modulus of the polymer adhesive can be extremely low 'but its resistance is too high. When the heat generation of the chip is too high, the package or semiconductor chip of the integrated circuit needs a thermal interface, which has a low modulus and extremely high thermal and electrical conductivity. There is also a need for such an interface that can be assembled and processed at low temperatures, such as about 200 and lower. The present invention provides a solution to this problem. According to the present invention, a porous, flexible, elastic heat transfer material is formed, which includes a mesh of metal sheets. The heat transfer material is preferably formed by first forming a conductive paste including a volatile organic solvent and a conductive metal sheet. The conductive paste is heated to a temperature below the melting point of the metal sheet, thereby evaporating the solvent and sintering only the edges of the metal sheet. The edge of the metal sheet is fused with the edge of the adjacent metal sheet such that an opening pore 'is defined between at least part of the adjacent metal sheets, thereby forming a metal sheet network. The -5- This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) '' --- binding-ordering

A7 -—_____Β7_ 五、發明説明（3 ) 網狀物結構使熱傳材料具有低於約1〇 Gpa之低儲存模數，同 時具有良好之導電性。 發明概要 本發明提供一種包括金屬片網狀物之多孔性、可撓、彈性 熱傳材料’該金屬片具有邊緣，該金屬片緊在其邊緣燒結， 且與相鄰金屬片之邊緣融合，使得在至少部分相鄰金屬片 之間界定出開口之孔隙。 本發明另提供一種形成多孔性、可撓、彈性熱傳材料之方 法，該方法包括： a) 形成包括溶劑及具有邊緣之導電金屬片之導電糊料；及 b) 將導電糊料加熱至低於金屬片熔點之溫度，因此使溶劑 蒸發且僅燒結金屬片之邊緣，因而使相鄰金屬片之邊緣融 合’使得在至少部分相鄰金屬片之間界定出開口孔隙，因而 形成金屬片網狀物。 本發明又另提供一種自微晶片散熱之方法，該方法包括： a) 形成包括溶劑及具有邊緣之導電金屬片之導電糊料；及 b) 將一層導熱糊料加於微晶片及散熱器之間，因而形成複 合材； c) 使複合材加熱至低於金屬片熔點之溫度，因此使溶劑蒸 發且僅燒結金屬片之邊緣，因而使相鄰金屬片之邊緣融合， 使得在至少部分相鄰金屬片之間界定出開口孔隙，且在微 晶片及散熱器之間形成熱傳材料層，該熱傳材料包括金屬 片網狀物。 附圖簡要敘述 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐）A7 --- _____ Β7_ V. Description of the invention (3) The mesh structure enables the heat transfer material to have a low storage modulus of less than about 10 Gpa, and at the same time has good electrical conductivity. SUMMARY OF THE INVENTION The present invention provides a porous, flexible, elastic heat transfer material including a mesh of metal sheets. The metal sheet has edges, the metal sheets are sintered tightly around the edges, and are fused with the edges of adjacent metal sheets such that An open pore is defined between at least a portion of adjacent metal sheets. The present invention further provides a method for forming a porous, flexible, and elastic heat transfer material, the method comprising: a) forming a conductive paste including a solvent and a conductive metal sheet having an edge; and b) heating the conductive paste to a low level At the temperature of the melting point of the metal sheet, the solvent is evaporated and only the edges of the metal sheet are sintered, so that the edges of adjacent metal sheets are fused, so that at least part of the adjacent metal sheets are defined with open pores, thereby forming a metal sheet mesh. Thing. The present invention further provides a method for dissipating heat from a microchip. The method includes: a) forming a conductive paste including a solvent and a conductive metal sheet having an edge; and b) adding a layer of thermally conductive paste to the microchip and the heat sink. C) The composite is heated to a temperature below the melting point of the metal sheet, so that the solvent is evaporated and only the edges of the metal sheet are sintered, so that the edges of adjacent metal sheets are fused so that they are at least partially adjacent Opening pores are defined between the metal sheets, and a heat transfer material layer is formed between the microchip and the heat sink. The heat transfer material includes a metal sheet network. Brief description of the drawings -6- This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

Claims (1)

578180 年 W92 案料Η換 Ϊ：替專罐 免ί 1 ί08專 4主 2 t 11申 09文 第中 月 ABCD 六、申請專利範圍 L 一種包含金屬片網之多孔性、可撓、有彈性之熱傳材料 ’該金屬片具有邊緣，該金屬片僅燒結其邊緣，且與相 鄰金屬片之邊緣融合，使得在至少部分相鄭金屬片間界 定出開口之孔隙。 2·如申請專利範圍第1項之熱傳材料，其實質上不含溶劑及 結合劑。 3·如申請專利範圍第！項之熱傳材料，其儲存模數約1〇 Gpa 或更低。 4·如申請專利範圍第1項之熱傳材料，其電阻約i χ 1〇-6歐姆/ 公分至約1 X 1〇·4歐姆/公分。 5.如申請專利範圍第丨項之熱傳材料，其中金屬片之厚度約 0.1微米至約2微米，且直徑約3微米至約100微米。 6·如申請專利範圍第1項之熱傳材料，其中之金屬片包含選 自包含鋁、銅、鉛、鋅、錫、金、鈀及其合金與其結合物 之金屬。 7· —種微電子裝置，其特徵在於該裝置包含一層如申請專 利範圍第1項之熱傳材料。 8· —種微電子裝置，其特徵在於其包含微晶片、在微晶片 上之散熱器及一層黏附在微晶片及散熱器間之如申請專 利範圍第1項之熱傳材料。 9. 一種形成多孔性、可撓、有彈性熱傳材料之方法，該方 法包含： a)形成包含溶劑及具有邊緣之導電金屬片之導電糊 料；及 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 578180578180 W92 case material change: exemption for special tank ί 1 ί 08 special 4 main 2 t 11 application 09 mid-month ABCD VI. Scope of patent application L A kind of porous, flexible and elastic metal mesh Heat transfer material 'The metal sheet has edges, the metal sheet sinters only its edges, and fuses with the edges of adjacent metal sheets, so that at least a portion of the metal sheets define an open pore. 2. The heat transfer material of item 1 of the scope of patent application is substantially free of solvents and binding agents. 3 · If the scope of patent application is the first! The heat transfer material of this item has a storage modulus of about 10 Gpa or lower. 4. The heat transfer material of item 1 in the scope of patent application has an electrical resistance of about i x 10-6 ohms / cm to about 1 x 10.4 ohms / cm. 5. The heat transfer material as claimed in claim 1, wherein the thickness of the metal sheet is about 0.1 micrometer to about 2 micrometers, and the diameter of the metal sheet is about 3 micrometers to about 100 micrometers. 6. The heat transfer material according to item 1 of the patent application, wherein the metal sheet includes a metal selected from the group consisting of aluminum, copper, lead, zinc, tin, gold, palladium, and combinations thereof. 7. A microelectronic device, characterized in that the device contains a layer of heat transfer material as described in item 1 of the patent application. 8. A microelectronic device, characterized in that it comprises a microchip, a heat sink on the microchip, and a layer of heat transfer material adhered between the microchip and the heat sink as described in the first patent application. 9. A method for forming a porous, flexible, and elastic heat transfer material, the method comprising: a) forming a conductive paste containing a solvent and a conductive metal sheet with an edge; and the Chinese paper standard (CNS) applies to this paper size A4 size (210 X 297 mm) 578 180 b)將導電糊料加熱至低於金屬片熔點之溫度，因此使 ‘劑蒸發且僅燒結金屬片之邊緣，因而使相鄰金屬片之 邊緣融合，使得在至少部分相鄰金屬片之間界定出開口 孔隙’因而形成金屬片網狀物。 •如申凊專利範圍第9項之方法’尚包含將一層熱傳材料黏 附於微晶片上之後續步驟。 11·如申請專利範圍第9項之方法，尚包含將一層熱傳材料黏 附在微晶片與散熱器間之後續步驟。 泛如申請專利範圍第9項之方法，尚包含將熱傳材料黏附於 微晶片上，且將熱傳材料之鉍二表面黏附於散熱器上之 後續步驟。 13.如申請專利範圍第9項之方法，其中之金屬片包含選自包 含鋁、銅、鉛、鋅、錫、金、鈀及其合金與其結合物之金 屬。 ⑷如申請專利範圍第9項之方法，其中之金屬片包含銀。 15· T申請專利範圍第9項之方法’其中金屬片之厚度約〇ι 微米至約2微米，且直徑約3微米至約1〇〇微米。 16.如中請專利範m第9項之方法’其中之溶劑包含揮發性有 機溶劑。 π如申請專利範圍第9項之料’其中之揮發性有機溶劑選 自包含乙醇、丙醇及丁醇。 181申請專利範圍第9項之方法，其中之揮發性有機溶劑包 含丁醇。 19·如申請專利範圍第9項之方法， 丁 < 4屬片係在約1〇〇b) The conductive paste is heated to a temperature lower than the melting point of the metal sheet, so that the agent evaporates and sinters only the edges of the metal sheet, so that the edges of adjacent metal sheets are fused, so that at least part of the adjacent metal sheets are defined The open pores' thus form a metal sheet network. • The method of item 9 of the patent application scope further includes a subsequent step of attaching a layer of heat transfer material to the microchip. 11. The method according to item 9 of the scope of patent application, further comprising a subsequent step of adhering a layer of heat transfer material between the microchip and the heat sink. The method such as item 9 of the patent application scope further includes the subsequent steps of adhering the heat transfer material to the microchip and adhering the bismuth two surface of the heat transfer material to the heat sink. 13. The method of claim 9 in which the metal sheet comprises a metal selected from the group consisting of aluminum, copper, lead, zinc, tin, gold, palladium, and combinations thereof. For example, the method of claim 9 in which the metal piece contains silver. 15. The method of claim 9 in the scope of the patent application, wherein the thickness of the metal sheet is about 0 μm to about 2 μm and the diameter is about 3 μm to about 100 μm. 16. The method according to item 9 of the patent, wherein the solvent comprises a volatile organic solvent. The volatile organic solvent in π as described in the item 9 of the scope of patent application is selected from the group consisting of ethanol, propanol and butanol. 181 The method of claim 9 in which the volatile organic solvent contains butanol. 19. The method according to item 9 of the scope of patent application, D < 4 genus films are about 100 -2 - 578180 A B c D 六、申請專利範圍 °C至約200t間之溫度下加熱。 20. —種自微晶片散熱之方法，該方法包含： a) 形成包含溶劑及具有邊緣之導電金屬片之導電糊 料；及 b) 將一層導熱糊料加於微晶片及散熱器之間，因而形 成複合材； c) 使複合材加熱至低於金屬片熔點之溫度，因此使溶 劑蒸發且僅燒結金屬片之邊緣，因而使相鄰金屬片之邊 緣融合，使得在至少部分相鄰金屬片之間界定出開口孔 隙，且在微晶片及散熱器之間形成熱傳材料層，該熱傳 材料包含金屬片網狀物。 -3- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐）-2-578180 A B c D VI. Patent application range Heating at a temperature between ° C and about 200t. 20. —A method for dissipating heat from a microchip, the method comprising: a) forming a conductive paste including a solvent and a conductive metal sheet having an edge; and b) adding a layer of thermally conductive paste between the microchip and the heat sink, Thus forming a composite material; c) heating the composite material to a temperature lower than the melting point of the metal sheet, thereby evaporating the solvent and sintering only the edges of the metal sheet, thus merging the edges of adjacent metal sheets such that Opening pores are defined therebetween, and a heat transfer material layer is formed between the microchip and the heat sink, the heat transfer material including a metal sheet network. -3- This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
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Publication number Priority date Publication date Assignee Title
KR100529112B1 (en) * 2003-09-26 2005-11-15 삼성에스디아이 주식회사 Display apparatus having porous heat transfer sheet
KR101118632B1 (en) * 2007-10-12 2012-03-06 제일모직주식회사 Composition for fabricating the electrode comprising flake type aluminium and electrode made by the same
WO2009090915A1 (en) 2008-01-17 2009-07-23 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for manufacturing light-emitting device
CN101319775B (en) * 2008-07-18 2010-06-09 东莞东海龙环保科技有限公司 High thermal conductivity flexible sealant of power type LED lamp
JP5497001B2 (en) * 2009-03-06 2014-05-21 東洋アルミニウム株式会社 Conductive paste composition and conductive film formed using the same
WO2012029560A1 (en) * 2010-08-31 2012-03-08 ポリマテック株式会社 Thermally conductive sheet
US10000670B2 (en) * 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
KR102360575B1 (en) 2015-05-08 2022-02-09 헨켈 아이피 앤드 홀딩 게엠베하 Sinterable films and pastes, and methods of use thereof
CN113632219A (en) * 2019-03-20 2021-11-09 住友电木株式会社 Thermally conductive composition and semiconductor device
CN112207481A (en) * 2020-09-09 2021-01-12 中山大学 Low-temperature pressureless sintering micron silver soldering paste and preparation method and application thereof
CN113492281A (en) * 2021-05-27 2021-10-12 中山大学 Micron silver soldering paste directly sintered on bare copper at low temperature and without pressure, and preparation method and application thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140292A (en) * 1986-11-30 1988-06-11 Chuo Denki Kogyo Kk Porous-type heat radiator
CN1019760B (en) * 1987-06-11 1992-12-30 国家机械工业委员会上海材料研究所 Make the method for multihole device by globular metallic powder
JPH07118701A (en) * 1993-10-22 1995-05-09 Katayama Tokushu Kogyo Kk Flaky metal powder, metallic porous body and production of the powder
JPH08213026A (en) * 1994-11-28 1996-08-20 Katayama Tokushu Kogyo Kk Metallic porous body for battery electrode substrate, battery plate, and manufacture thereof
JP3166060B2 (en) * 1995-12-11 2001-05-14 三菱マテリアル株式会社 Heat dissipation sheet
US5738936A (en) * 1996-06-27 1998-04-14 W. L. Gore & Associates, Inc. Thermally conductive polytetrafluoroethylene article
JP4174088B2 (en) * 1997-07-14 2008-10-29 住友ベークライト株式会社 Conductive resin paste and semiconductor device manufactured using the same

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