CA2436736A1 - Ultraviolet laser ablative patterning of microstructures in semiconductors - Google Patents
Ultraviolet laser ablative patterning of microstructures in semiconductors Download PDFInfo
- Publication number
- CA2436736A1 CA2436736A1 CA002436736A CA2436736A CA2436736A1 CA 2436736 A1 CA2436736 A1 CA 2436736A1 CA 002436736 A CA002436736 A CA 002436736A CA 2436736 A CA2436736 A CA 2436736A CA 2436736 A1 CA2436736 A1 CA 2436736A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- laser system
- substrate
- chuck
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 30
- 238000000059 patterning Methods 0.000 title description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
- 238000012545 processing Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000004044 response Effects 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 238000013519 translation Methods 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 9
- 230000001965 increasing effect Effects 0.000 claims description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 239000002893 slag Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 37
- 230000003287 optical effect Effects 0.000 abstract description 27
- 238000005520 cutting process Methods 0.000 abstract description 24
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000000608 laser ablation Methods 0.000 abstract description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 82
- 238000010521 absorption reaction Methods 0.000 description 11
- 238000005553 drilling Methods 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 238000003698 laser cutting Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 230000014616 translation Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 239000003989 dielectric material Substances 0.000 description 2
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- 125000003700 epoxy group Chemical group 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
- 101100008048 Caenorhabditis elegans cut-4 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910020169 SiOa Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- -1 silcon carbide (SiC) Chemical compound 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
- B23K26/0884—Devices involving movement of the laser head in at least one axial direction in at least two axial directions in at least in three axial directions, e.g. manipulators, robots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Robotics (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26555601P | 2001-01-31 | 2001-01-31 | |
| US60/265,556 | 2001-01-31 | ||
| US09/803,382 US20020033558A1 (en) | 2000-09-20 | 2001-03-09 | UV laser cutting or shape modification of brittle, high melting temperature target materials such as ceramics or glasses |
| US09/803,382 | 2001-03-09 | ||
| PCT/US2002/000867 WO2002060636A1 (en) | 2001-01-31 | 2002-01-10 | Ultraviolet laser ablative patterning of microstructures in semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2436736A1 true CA2436736A1 (en) | 2002-08-08 |
Family
ID=26951292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002436736A Abandoned CA2436736A1 (en) | 2001-01-31 | 2002-01-10 | Ultraviolet laser ablative patterning of microstructures in semiconductors |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1365880A4 (ko) |
| JP (1) | JP4634692B2 (ko) |
| CN (1) | CN1301178C (ko) |
| CA (1) | CA2436736A1 (ko) |
| GB (1) | GB2389811B (ko) |
| TW (1) | TW525240B (ko) |
| WO (1) | WO2002060636A1 (ko) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6676878B2 (en) | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
| US6949449B2 (en) * | 2003-07-11 | 2005-09-27 | Electro Scientific Industries, Inc. | Method of forming a scribe line on a ceramic substrate |
| US7985942B2 (en) | 2004-05-28 | 2011-07-26 | Electro Scientific Industries, Inc. | Method of providing consistent quality of target material removal by lasers having different output performance characteristics |
| US20060108327A1 (en) * | 2004-11-23 | 2006-05-25 | Chng Kiong C | Method of manufacturing a microstructure |
| DE102005042072A1 (de) | 2005-06-01 | 2006-12-14 | Forschungsverbund Berlin E.V. | Verfahren zur Erzeugung von vertikalen elektrischen Kontaktverbindungen in Halbleiterwafern |
| JP2007067082A (ja) * | 2005-08-30 | 2007-03-15 | Disco Abrasive Syst Ltd | ウエーハの穿孔方法 |
| DE102005042074A1 (de) * | 2005-08-31 | 2007-03-08 | Forschungsverbund Berlin E.V. | Verfahren zur Erzeugung von Durchkontaktierungen in Halbleiterwafern |
| US7767595B2 (en) * | 2006-10-26 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| CN101041415B (zh) * | 2006-11-07 | 2010-08-11 | 东南大学 | 硅片上制作纳米孔的方法 |
| JP2008155274A (ja) * | 2006-12-26 | 2008-07-10 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
| KR101041140B1 (ko) * | 2009-03-25 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 기판 절단 방법 |
| CN101850981A (zh) * | 2010-06-23 | 2010-10-06 | 东北林业大学 | 一种激光烧蚀制备氧化硅纳米泡沫的方法 |
| JP5860219B2 (ja) * | 2011-03-10 | 2016-02-16 | 株式会社ディスコ | レーザー加工装置 |
| TWI587957B (zh) * | 2011-08-18 | 2017-06-21 | 奧寶科技有限公司 | 用於電路之一檢測/維修/檢測系統之透鏡總成及用於電路之一檢測/維修/檢測系統之組合器總成 |
| CN102956239A (zh) * | 2011-08-29 | 2013-03-06 | 新科实业有限公司 | 磁头、磁头折片组合以及磁盘驱动单元 |
| CN103567642B (zh) * | 2012-08-08 | 2017-07-11 | 赛恩倍吉科技顾问（深圳）有限公司 | 蓝宝石切割装置 |
| CN103962727B (zh) * | 2013-01-28 | 2018-03-02 | 深圳市裕展精密科技有限公司 | 蓝宝石切割装置 |
| US10118250B1 (en) | 2017-09-15 | 2018-11-06 | International Business Machines Corporation | In-situ laser beam position and spot size sensor and high speed scanner calibration, wafer debonding method |
| CN108326435B (zh) * | 2017-12-29 | 2022-08-30 | 大族激光科技产业集团股份有限公司 | 一种模具钢的激光打标方法 |
| CN108637473B (zh) * | 2018-06-05 | 2023-12-08 | 昆山宝锦激光拼焊有限公司 | 一种天窗板一次定位焊接成型的装置 |
| CN108637472B (zh) * | 2018-06-05 | 2023-12-08 | 昆山宝锦激光拼焊有限公司 | 一种天窗激光焊接线平台 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4473737A (en) * | 1981-09-28 | 1984-09-25 | General Electric Company | Reverse laser drilling |
| US4534804A (en) * | 1984-06-14 | 1985-08-13 | International Business Machines Corporation | Laser process for forming identically positioned alignment marks on the opposite sides of a semiconductor wafer |
| JP2621599B2 (ja) * | 1990-07-05 | 1997-06-18 | 日本電気株式会社 | コンタクトホール形成装置及び方法 |
| US5611946A (en) * | 1994-02-18 | 1997-03-18 | New Wave Research | Multi-wavelength laser system, probe station and laser cutter system using the same |
| US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
| US5847960A (en) * | 1995-03-20 | 1998-12-08 | Electro Scientific Industries, Inc. | Multi-tool positioning system |
| US5751585A (en) * | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
| JPH09107168A (ja) * | 1995-08-07 | 1997-04-22 | Mitsubishi Electric Corp | 配線基板のレーザ加工方法、配線基板のレーザ加工装置及び配線基板加工用の炭酸ガスレーザ発振器 |
| JPH11773A (ja) * | 1997-06-11 | 1999-01-06 | Nec Corp | レーザ加工装置およびその方法 |
| JP3532100B2 (ja) * | 1997-12-03 | 2004-05-31 | 日本碍子株式会社 | レーザ割断方法 |
| JP3395141B2 (ja) * | 1998-03-02 | 2003-04-07 | 住友重機械工業株式会社 | レーザ加工装置 |
| US6032997A (en) * | 1998-04-16 | 2000-03-07 | Excimer Laser Systems | Vacuum chuck |
| US6057180A (en) * | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
| US6063695A (en) * | 1998-11-16 | 2000-05-16 | Taiwan Semiconductor Manufacturing Company | Simplified process for the fabrication of deep clear laser marks using a photoresist mask |
| JP2000164535A (ja) * | 1998-11-24 | 2000-06-16 | Mitsubishi Electric Corp | レーザ加工装置 |
| TW482705B (en) * | 1999-05-28 | 2002-04-11 | Electro Scient Ind Inc | Beam shaping and projection imaging with solid state UV Gaussian beam to form blind vias |
| US6472295B1 (en) * | 1999-08-27 | 2002-10-29 | Jmar Research, Inc. | Method and apparatus for laser ablation of a target material |
| US6255621B1 (en) * | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| US6356337B1 (en) * | 2000-03-08 | 2002-03-12 | Anvik Corporation | Two-sided substrate imaging using single-approach projection optics |
| DE10026066A1 (de) * | 2000-05-25 | 2001-11-29 | Deere & Co | Vorrichtung zum Umhüllen eines Rundballens |
-
2002
- 2002-01-10 CA CA002436736A patent/CA2436736A1/en not_active Abandoned
- 2002-01-10 JP JP2002560818A patent/JP4634692B2/ja not_active Expired - Fee Related
- 2002-01-10 CN CNB028044045A patent/CN1301178C/zh not_active Expired - Fee Related
- 2002-01-10 TW TW091100223A patent/TW525240B/zh not_active IP Right Cessation
- 2002-01-10 GB GB0317853A patent/GB2389811B/en not_active Expired - Fee Related
- 2002-01-10 WO PCT/US2002/000867 patent/WO2002060636A1/en active Application Filing
- 2002-01-10 EP EP02707453A patent/EP1365880A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN1527754A (zh) | 2004-09-08 |
| GB2389811B (en) | 2004-10-27 |
| WO2002060636A1 (en) | 2002-08-08 |
| EP1365880A4 (en) | 2008-04-16 |
| TW525240B (en) | 2003-03-21 |
| JP2004526575A (ja) | 2004-09-02 |
| EP1365880A1 (en) | 2003-12-03 |
| CN1301178C (zh) | 2007-02-21 |
| GB0317853D0 (en) | 2003-09-03 |
| JP4634692B2 (ja) | 2011-02-16 |
| GB2389811A (en) | 2003-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |