CA2421171C - Magnesium barium thioaluminate and related phosphor materials - Google Patents
Magnesium barium thioaluminate and related phosphor materials Download PDFInfo
- Publication number
- CA2421171C CA2421171C CA002421171A CA2421171A CA2421171C CA 2421171 C CA2421171 C CA 2421171C CA 002421171 A CA002421171 A CA 002421171A CA 2421171 A CA2421171 A CA 2421171A CA 2421171 C CA2421171 C CA 2421171C
- Authority
- CA
- Canada
- Prior art keywords
- phosphor
- magnesium
- europium
- element selected
- barium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 239000000463 material Substances 0.000 title description 44
- IJBYNGRZBZDSDK-UHFFFAOYSA-N barium magnesium Chemical compound [Mg].[Ba] IJBYNGRZBZDSDK-UHFFFAOYSA-N 0.000 title description 8
- 239000010408 film Substances 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 44
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 37
- 239000011777 magnesium Substances 0.000 claims abstract description 37
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 30
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000005864 Sulphur Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 8
- 239000011575 calcium Substances 0.000 claims abstract description 8
- 230000009977 dual effect Effects 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 8
- 239000011669 selenium Substances 0.000 claims abstract description 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 13
- 230000008021 deposition Effects 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 11
- 229910052684 Cerium Inorganic materials 0.000 abstract description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract description 3
- 229910052788 barium Inorganic materials 0.000 description 29
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 29
- 239000013078 crystal Substances 0.000 description 20
- 239000008188 pellet Substances 0.000 description 16
- 238000000137 annealing Methods 0.000 description 11
- 239000012190 activator Substances 0.000 description 10
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 10
- RVKZDIDATLDTNR-UHFFFAOYSA-N sulfanylideneeuropium Chemical compound [Eu]=S RVKZDIDATLDTNR-UHFFFAOYSA-N 0.000 description 9
- -1 cerium-activated strontium sulphide Chemical class 0.000 description 8
- COOGPNLGKIHLSK-UHFFFAOYSA-N aluminium sulfide Chemical compound [Al+3].[Al+3].[S-2].[S-2].[S-2] COOGPNLGKIHLSK-UHFFFAOYSA-N 0.000 description 7
- 238000005424 photoluminescence Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910001940 europium oxide Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- SMDQFHZIWNYSMR-UHFFFAOYSA-N sulfanylidenemagnesium Chemical compound S=[Mg] SMDQFHZIWNYSMR-UHFFFAOYSA-N 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- CJDMXHXVMQLNDN-UHFFFAOYSA-N [Mg++].[S--].[S--].[Ba++] Chemical compound [Mg++].[S--].[S--].[Ba++] CJDMXHXVMQLNDN-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
- AGVJBLHVMNHENQ-UHFFFAOYSA-N Calcium sulfide Chemical class [S-2].[Ca+2] AGVJBLHVMNHENQ-UHFFFAOYSA-N 0.000 description 1
- 241000588731 Hafnia Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004110 Zinc silicate Substances 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010399 physical interaction Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical compound [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
- 235000019352 zinc silicate Nutrition 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7701—Chalogenides
- C09K11/7703—Chalogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7729—Chalcogenides
- C09K11/7731—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/886—Chalcogenides with rare earth metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23254900P | 2000-09-14 | 2000-09-14 | |
| US60/232,549 | 2000-09-14 | ||
| US09/798,203 | 2001-03-02 | ||
| US09/798,203 US20020122895A1 (en) | 2000-09-14 | 2001-03-02 | Magnesium barium thioaluminate and related phosphor materials |
| PCT/CA2001/001234 WO2002023957A1 (en) | 2000-09-14 | 2001-08-30 | Magnesium barium thioaluminate and related phosphor materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2421171A1 CA2421171A1 (en) | 2002-03-21 |
| CA2421171C true CA2421171C (en) | 2008-11-18 |
Family
ID=26926110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002421171A Expired - Fee Related CA2421171C (en) | 2000-09-14 | 2001-08-30 | Magnesium barium thioaluminate and related phosphor materials |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20020122895A1 (enExample) |
| EP (1) | EP1323337B1 (enExample) |
| JP (1) | JP5073148B2 (enExample) |
| AT (1) | ATE309689T1 (enExample) |
| AU (1) | AU2001287442A1 (enExample) |
| CA (1) | CA2421171C (enExample) |
| DE (1) | DE60114867T2 (enExample) |
| WO (1) | WO2002023957A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020145129A1 (en) * | 1998-08-14 | 2002-10-10 | Yun Sun-Jin | High luminance-phosphor and method for fabricating the same |
| JP3479273B2 (ja) | 2000-09-21 | 2003-12-15 | Ｔｄｋ株式会社 | 蛍光体薄膜その製造方法およびｅｌパネル |
| US6617782B2 (en) * | 2001-05-30 | 2003-09-09 | Ifire Technology Inc. | Thioaluminate phosphor material with a gadolinium co-activator |
| US6686062B2 (en) | 2001-06-13 | 2004-02-03 | Ifire Technology Inc. | Magnesium calcium thioaluminate phosphor |
| US6793782B2 (en) * | 2001-12-21 | 2004-09-21 | Ifire Technology Inc. | Sputter deposition process for electroluminescent phosphors |
| JP2003301171A (ja) * | 2002-02-06 | 2003-10-21 | Tdk Corp | 蛍光体薄膜、その製造方法およびｅｌパネル |
| CA2495771A1 (en) * | 2002-09-12 | 2004-03-25 | Ifire Technology Corp. | Silicon oxynitride passivated rare earth activated thioaluminate phosphors for electroluminescent displays |
| DE60324577D1 (de) * | 2002-09-13 | 2008-12-18 | Ifire Ip Corp | Dünnfilmleuchtstoff für elektrolumineszenzanzeigen |
| KR101082130B1 (ko) * | 2002-10-18 | 2011-11-09 | 이화이어 아이피 코포레이션 | 컬러 전계발광 디스플레이 |
| JP2006511045A (ja) | 2002-12-20 | 2006-03-30 | アイファイアー・テクノロジー・コープ | 厚膜誘電性エレクトロルミネッセンスディスプレイ用のバリア層 |
| TW200420740A (en) * | 2003-01-30 | 2004-10-16 | Ifire Technology Inc | Controlled sulfur species deposition process |
| JP4263001B2 (ja) | 2003-03-06 | 2009-05-13 | アイファイヤー アイピー コーポレイション | スパッタリングターゲット |
| WO2004112437A1 (en) * | 2003-06-13 | 2004-12-23 | Matsushita Electric Industrial Co., Ltd. | Luminescent device, display device, and display device control method |
| WO2005003402A2 (en) * | 2003-07-03 | 2005-01-13 | Ifire Technology Corp. | Hydrogen sulfide injection method for phosphor deposition |
| US8057856B2 (en) | 2004-03-15 | 2011-11-15 | Ifire Ip Corporation | Method for gettering oxygen and water during vacuum deposition of sulfide films |
| JP4831939B2 (ja) * | 2004-03-31 | 2011-12-07 | アイファイヤー アイピー コーポレイション | 発光体薄膜及び発光素子 |
| US7427367B2 (en) * | 2004-08-06 | 2008-09-23 | Ifire Technology Corp. | Barium thioaluminate phosphor materials with novel crystal structures |
| US7790003B2 (en) * | 2004-10-12 | 2010-09-07 | Southwest Research Institute | Method for magnetron sputter deposition |
| US7592051B2 (en) * | 2005-02-09 | 2009-09-22 | Southwest Research Institute | Nanostructured low-Cr Cu-Cr coatings for high temperature oxidation resistance |
| JP2007056235A (ja) | 2005-07-28 | 2007-03-08 | Sony Corp | 蛍光体、光学装置、及び表示装置 |
| KR100835069B1 (ko) * | 2007-01-02 | 2008-06-03 | 삼성전기주식회사 | 형광체 및 이를 이용한 발광장치 |
| JP2011199174A (ja) * | 2010-03-23 | 2011-10-06 | Fujifilm Corp | 発光層形成用固形材料、並びに有機電界発光素子及びその製造方法 |
| US8977735B2 (en) * | 2011-12-12 | 2015-03-10 | Rackspace Us, Inc. | Providing a database as a service in a multi-tenant environment |
| CN117602589A (zh) * | 2023-09-29 | 2024-02-27 | 中国科学院新疆理化技术研究所 | 化合物硒镓镁钙和硒镓镁钙红外非线性光学晶体及制备方法和应用 |
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| US3742277A (en) * | 1971-03-18 | 1973-06-26 | Gte Laboratories Inc | Flying spot scanner having screen of strontium thiogallte coactivatedby trivalent cerium and divalent lead |
| FR2444073A1 (fr) * | 1978-12-15 | 1980-07-11 | Rhone Poulenc Ind | Nouvelles substances luminescentes a base de thiogallates d'alcalino terreux et leur procede d'invention |
| US5309070A (en) * | 1991-03-12 | 1994-05-03 | Sun Sey Shing | AC TFEL device having blue light emitting thiogallate phosphor |
| US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
| JP2840185B2 (ja) * | 1993-10-21 | 1998-12-24 | 松下電器産業株式会社 | 蛍光体薄膜とこれを用いた薄膜ｅｌパネル |
| US5505986A (en) * | 1994-02-14 | 1996-04-09 | Planar Systems, Inc. | Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices |
| US5598059A (en) * | 1994-04-28 | 1997-01-28 | Planar Systems, Inc. | AC TFEL device having a white light emitting multilayer phosphor |
| JPH08134440A (ja) | 1994-11-14 | 1996-05-28 | Mitsui Mining & Smelting Co Ltd | 薄膜エレクトロルミネッセンス素子 |
| US5834053A (en) * | 1994-11-30 | 1998-11-10 | The Regents Of The University Of California | Blue light emitting thiogallate phosphor |
| JP2803631B2 (ja) * | 1995-07-03 | 1998-09-24 | 株式会社デンソー | エレクトロルミネッセンス素子およびその製造方法 |
| US5581150A (en) * | 1995-10-13 | 1996-12-03 | Planar Systems, Inc. | TFEL device with injection layer |
| US5656888A (en) * | 1995-11-13 | 1997-08-12 | Sun; Sey-Shing | Oxygen-doped thiogallate phosphor |
| JPH10130638A (ja) * | 1996-11-01 | 1998-05-19 | Toray Ind Inc | 蛍光体ペーストおよびそれを用いたプラズマディスプレイパネルの製造方法 |
| JP3936479B2 (ja) * | 1998-10-23 | 2007-06-27 | 三井金属鉱業株式会社 | 薄膜エレクトロルミネッセンス材料 |
| US6686062B2 (en) * | 2001-06-13 | 2004-02-03 | Ifire Technology Inc. | Magnesium calcium thioaluminate phosphor |
-
2001
- 2001-03-02 US US09/798,203 patent/US20020122895A1/en not_active Abandoned
- 2001-08-30 EP EP01966898A patent/EP1323337B1/en not_active Expired - Lifetime
- 2001-08-30 AT AT01966898T patent/ATE309689T1/de not_active IP Right Cessation
- 2001-08-30 AU AU2001287442A patent/AU2001287442A1/en not_active Abandoned
- 2001-08-30 DE DE60114867T patent/DE60114867T2/de not_active Expired - Lifetime
- 2001-08-30 JP JP2002526805A patent/JP5073148B2/ja not_active Expired - Fee Related
- 2001-08-30 CA CA002421171A patent/CA2421171C/en not_active Expired - Fee Related
- 2001-08-30 WO PCT/CA2001/001234 patent/WO2002023957A1/en not_active Ceased
-
2003
- 2003-05-20 US US10/441,872 patent/US6919682B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2421171A1 (en) | 2002-03-21 |
| WO2002023957A1 (en) | 2002-03-21 |
| EP1323337A1 (en) | 2003-07-02 |
| US20040027048A1 (en) | 2004-02-12 |
| JP2004524378A (ja) | 2004-08-12 |
| AU2001287442A1 (en) | 2002-03-26 |
| EP1323337B1 (en) | 2005-11-09 |
| DE60114867T2 (de) | 2006-05-24 |
| US6919682B2 (en) | 2005-07-19 |
| ATE309689T1 (de) | 2005-11-15 |
| JP5073148B2 (ja) | 2012-11-14 |
| DE60114867D1 (de) | 2005-12-15 |
| US20020122895A1 (en) | 2002-09-05 |
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