US20020122895A1 - Magnesium barium thioaluminate and related phosphor materials - Google Patents

Magnesium barium thioaluminate and related phosphor materials Download PDF

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US20020122895A1
US20020122895A1 US09/798,203 US79820301A US2002122895A1 US 20020122895 A1 US20020122895 A1 US 20020122895A1 US 79820301 A US79820301 A US 79820301A US 2002122895 A1 US2002122895 A1 US 2002122895A1
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phosphor
europium
magnesium
element selected
composition
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Dan Cheong
Xingwei Wu
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Alberta Ltd
iFire Technology Corp
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Priority to US09/798,203 priority Critical patent/US20020122895A1/en
Priority to PCT/CA2001/001234 priority patent/WO2002023957A1/en
Priority to EP01966898A priority patent/EP1323337B1/en
Priority to AU2001287442A priority patent/AU2001287442A1/en
Priority to JP2002526805A priority patent/JP5073148B2/ja
Priority to DE60114867T priority patent/DE60114867T2/de
Priority to AT01966898T priority patent/ATE309689T1/de
Priority to CA002421171A priority patent/CA2421171C/en
Assigned to IFIRE TECHNOLOGY INC. reassignment IFIRE TECHNOLOGY INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEONG, DAN DAEWEON, WU, XINGWEI
Publication of US20020122895A1 publication Critical patent/US20020122895A1/en
Priority to US10/441,872 priority patent/US6919682B2/en
Assigned to IFIRE TECHNOLOGY CORP. reassignment IFIRE TECHNOLOGY CORP. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: ALBERTA LTD.
Assigned to ALBERTA LTD. reassignment ALBERTA LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IFIRE TECHNOLOGY INC.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7701—Chalogenides
    • C09K11/7703—Chalogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/7731—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/886—Chalcogenides with rare earth metals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Definitions

  • the present invention relates to a high luminosity blue phosphor.
  • the present invention relates to a blue phosphor that may be used without an optical filter to provide acceptable colour coordinates for the blue sub-pixel element of a full-colour electroluminescent display.
  • the electroluminescent displays employ thick film dielectric layers with a high dielectric constant.
  • the phosphor is M′ a Ba 1-a M′′ 2 M′′′ 4 .RE, where M′ is selected from magnesium and calcium, M′′ is selected from aluminum, gallium and indium, M′′′ is selected from sulphur, selenium and tellurium, and RE is a rare earth element, especially europium and cerium.
  • TFEL Thin film electroluminescent
  • Electroluminescent displays with thin film phosphors employing thick film dielectric layers fabricated on ceramic substrates, as exemplified by U.S. Pat. 5,432,015 provide greater luminance and superior reliability.
  • a high luminosity full colour electroluminescent display requires the use of red, green and blue sub-pixels.
  • Optical filters are needed to achieve the required colour coordinates for each sub-pixel. Consequently, the thin film phosphor materials used for each sub-pixel must be patterned so that there is minimal attenuation of the emission spectrum for each colour of pixel by the optical filters.
  • the required patterning can be achieved by depositing the phosphor materials through a shadow mask.
  • the shadow mask technique does not provide adequate accuracy, and photolithographic methods must be employed. Photolithographic techniques require the deposition of photoresist films and the etching or lift-off of portions of the phosphor film to provide the required pattern.
  • Thick film dielectric structures provide superior resistance to dielectric breakdown, as well as a reduced operating voltage.
  • the thick film dielectric structure When deposited on a ceramic substrate, the thick film dielectric structure will withstand higher processing temperatures than TFEL devices on glass substrates. The increased tolerance to higher temperatures facilitates annealing of the phosphor films at higher temperatures, to improve luminosity.
  • thick film electroluminescent displays have not achieved the phosphor luminance and colour coordinates needed to be fully competitive with cathode ray tube (CRT) displays.
  • CRT cathode ray tube
  • cerium-activated strontium sulphide has been the phosphor material of choice for blue electroluminescence. This material has a relatively high efficiency of conversion of electrical to optical energy, of up to about 1 lumen per watt of input power.
  • the emission spectrum of cerium-activated strontium sulphide contains a substantial green emission in addition to the required blue emission, producing a cyan colour. This necessitates the use of an optical filter to achieve acceptable blue colour coordinates. The filter substantially attenuates the luminosity of the phosphor, and it is therefore difficult to achieve adequate display luminosity. It is known that the spectral emission of cerium-activated strontium sulphide phosphor may be shifted to some degree towards blue by controlling deposition conditions and activator concentration, but not to an extent required to eliminate the need for an optical filter.
  • Alternate blue phosphor materials have been evaluated. These include cerium-activated alkaline earth thiogallate compounds, which give good blue colour coordinates, but have relatively poor luminosity and stability. Lead-activated calcium sulphide has also been shown to provide excellent blue colour coordinates when the lead activator is introduced as a dimer, but this material is subject to degradation of the dimer species into isolated activator atoms that provide an ultraviolet rather than blue emission. Europium-activated barium thioaluminate provides excellent blue colour coordinates and higher luminance, but must be annealed at high temperature to achieve this performance.
  • one aspect of the present invention provides a phosphor comprising a composition of the formula
  • M′ is at least one element selected from the group consisting of magnesium and calcium
  • M′′ is at least one element selected from the group consisting of aluminum, gallium and indium,
  • M′′′ is at least one element selected from the group consisting of sulphur, selenium and tellurium,
  • RE is at least one rare earth element
  • the phosphor has been annealed.
  • M′′ is aluminum, especially with RE being europium and/or M′′′ being sulphur.
  • M′ is magnesium, M′′′ is sulphur and RE is europium.
  • “a” is in the range of 0.4 to 0.8, especially with the phosphor comprising a eutectic composition, or in the range of 0.7 to 0.8.
  • a further aspect of the present invention provides a method for the preparation of a phosphor on a substrate, said phosphor comprising a composition of the formula M′ a Ba 1-a M′′ 2 M′′′ 4 :RE, where
  • M′ is at least one element selected from the group consisting of magnesium and calcium
  • M′′ is at least one element selected from the group consisting of aluminum, gallium and indium,
  • M′′′ is at least one element selected from the group consisting of sulphur, selenium and tellurium,
  • RE is at least one rare earth element
  • said method comprising using a compound of the formula M′′ 2 M′′′ 3 as a first source in a dual source electron beam evaporation apparatus and using a mixture of compounds of the formulae M′M′′′ and BaM′′′ as a second source in said apparatus, said compound of the first source and said compounds of the second source being in the ratios to provide a composition of the phosphor and at least one of the first and second sources including a compound of the formula REM′′′, and
  • the phosphor so obtained is annealed.
  • the method provides phosphors as defined above.
  • the phosphor is annealed at a temperature of at least about 850° C., or the phosphor is annealed at a temperature of at least about 600° C.
  • RE is europium in an amount of not more than 3 atomic percent, base on the amount of M′ and barium, most preferably in which REM′′′ is europium sulphide.
  • Europium sulphide may be replaced in whole or in part with europium oxide.
  • FIG. 1 is a schematic representation of a cross-section of an electroluminescent element
  • FIG. 2 is a schematic representation of a plan view of an electroluminescent element
  • FIG. 3 is a graphical representation of data from Example V;
  • FIG. 4 is a graphical representation of data from Example VI.
  • FIGS. 5 - 9 are graphical representations of data from Example VII.
  • the present invention relates to improving the luminance and emission spectrum of phosphor materials used for blue sub-pixels. It is believed that the phosphors of the present invention will have a wide range of uses. The phosphors of the invention are particular described herein with respect to use in thick film electroluminescent displays, but it is believed that the phosphors may also be used in conjunction with thin film electroluminescent displays and in other end-uses.
  • a preferred embodiment of the invention is to use the phosphors in full colour AC electroluminescent displays employing thick film dielectric layers with a high dielectric constant.
  • the preferred thick film dielectric structures provide superior resistance to dielectric breakdown as well as a reduced operating voltage compared to thin film electroluminescent (TFEL) displays.
  • One aspect of the invention is directed to improving the performance of a barium thioaluminate phosphor, at a lower annealing temperature.
  • a composition may be formed with a finite concentration of two constituent elements or compounds and with a minimum melting temperature. In metallurgy, such a composition is termed the eutectic composition, but the phenomenon also occurs where the constituent elements or compounds are ceramics rather than metals.
  • a pseudo-binary electroluminescent phosphor may be formed from zinc silicate and zinc germanate. The phosphor obtained has a lower annealing temperature than either of its pseudo-binary components.
  • the pseudo-binary phosphor material requires acceptable electron transport properties.
  • the matrix or host material acts as a medium in which electrons can be accelerated with minimal probability of scattering from impurities, lattice defects or grain boundaries. This maximizes the probability that energy transfer from the accelerated electrons is via impact excitation of the activator species. Light is emitted as the activator atoms return back to their ground or unexcited state. While not bound by any theory, the inventors believe that electron transport would be optimized in a pseudo-binary phosphor material by substituting atoms at lattice sites of one component compound with atoms of the other component having the same valence state. In this manner, electron scattering due to the substitutions of atoms in the crystal lattice would be minimized and the dominant mechanism for energy transfer from the accelerated electrons would be by impact excitation of activator atoms resulting in light emission.
  • barium thioaluminate the above conditions for substitution could be met if barium is substituted with another element from Group II in the Periodic Table of Elements, for example magnesium or calcium.
  • the conditions may also be met by substituting aluminum with another element in Group III of the Periodic Table, for example gallium or indium; or if sulphur were substituted with another element in Group VI of the Periodic Table, for example selenium or tellurium.
  • the substitutions must occur in a manner that avoids causing a substantial change in the crystal structure of the phosphor material, or causing a second phase to precipitate within the phosphor material as a result of the substitutions.
  • the activator of the phosphor must be soluble in the host lattice, and consequently the lattice constant of the pseudo-binary host material would need to be such that there is adequate dissolution of the activator species.
  • Another aspect of the present invention provides a phosphor formed from a composition of the formula M′ a Ba 1-a M′′ 2 M′′′ 4 :RE, where
  • M′ is at least one of magnesium and calcium
  • M′′ is at least one of aluminum, gallium and indium
  • M′′′ is at least one of sulphur, selenium and tellurium
  • RE is a rare earth element, especially europium and cerium, and
  • each of M′, M′′ and M′′′ is a single element.
  • M′ is magnesium
  • M′′ is aluminum
  • M′′′ is sulphur.
  • the preferred rare earth element (RE) is europium.
  • the value of “a” is in the range of 0.1 to 0.9, preferably in the range of 0.4 to 0.8. In particularly preferred embodiments of the invention, the value of “a” is selected so that the composition forms a pseudo-binary composition, with a melting point that is lower than the melting point of corresponding barium thioaluminate. In further preferred embodiments, the value of “a” is in the range of 0.5-0.75 or in the range of 0.7-0.8.
  • values of “a” in the range of 0.4-0.8 are believed to result in the formation of a eutectic composition and values of “a” in the range of 0.7-0.8 are believed to result in the formation of a single phase composition.
  • the phosphor is formed from a composition of a magnesium barium thioaluminate.
  • the elemental composition of the phosphor and its activator may be selected to provide a blue emission spectrum with colour coordinates acceptable for blue sub-pixels, without the need for an optical filter.
  • the phosphor may be in the form of a thin film electroluminescent phosphor.
  • europium activated magnesium barium thioaluminate will be less susceptible to hydrolysis than cerium activated strontium sulphide, thus rendering it easier to pattern using photolithographic techniques.
  • the preferred method of deposition of the phosphor on the substrate is by the use of dual source electron beam deposition.
  • a compound of the formula M′′ 2 M′′′ 3 where M′′ and M′′′ are defined above, is used as the first source in the dual source electron beam evaporation apparatus.
  • the compound is conveniently in the form of a pellet.
  • a mixture of compounds of the formulae M′M′′′ and BaM′′′, where M′, M′′ and M′′′ are as defined above, is used as the second source in the apparatus.
  • the mixture of compounds is also conveniently in the form of a pellet.
  • the various compounds of the first and second sources are in the ratios required to provide the required composition of the phosphor.
  • the ratios in the pellets might differ slightly from those of the composition of the phosphor, to allow for different rates of evaporation of the various compounds during the deposition process, and it is understood that ratios of compositions in pellets may need to be adjusted so as to obtain the desired composition in the deposited film. It is understood that in a dual source electron beam deposition process, the compounds of the phosphor are used per se and there are no by-products of the process. The compounds are evaporated from the respective sources and deposited onto the substrate that is to be coated.
  • the compound REM′′′ used in the method to form the phosphor is most preferably europium sulphide.
  • the amount of europium is up to 3 atomic percent based on the combined amount of M′, especially magnesium, and barium.
  • the europium sulphide may be placed in whole or in part with europium oxide, especially Eu 2 O 3 .
  • the phosphor is subjected to an annealing step.
  • the annealing step is carried out after the phosphor has been deposited on the substrate on which it is to be used.
  • the annealing step must be at a temperature that is sufficiently low to prevent melting or degradation of the substrate.
  • the temperature should also be above the temperature at which annealing will occur and preferably above the temperature at which the deposited compounds will form a film having a homogeneous composition.
  • the temperature is at least about 850° C., and at such temperature the period of the annealing should be short e.g. 1-2 minutes. Longer periods of time may be used at lower temperatures e.g. at temperatures of 600-650° C., the time may be increased to for example 10 minutes or longer. Such times will depend on the particular substrate being used.
  • the preferred substrate is a thick film ceramic material, which are known in the art.
  • the substrate comprises a ceramic sheet, typically alumina, upon which an electrically conductive film, typically gold or a silver alloy, is deposited.
  • a thick film layer consisting of a ferroelectric material and typically comprising one or more of lead magnesium niobate titanate, lead zirconate titanate or barium titanate is deposited on the electrically conductive film.
  • the phosphor film is deposited on the thick film layer followed by an optically transparent but electrically conductive film to form the second electrode for the resultant sub-pixel.
  • Thin film dielectric layers may be deposited on the thick film layer to mediate undesirable chemical and physical interactions between the deposited phosphor film and the thick and other underlying layers. Thin film dielectric layers may also be deposited on top of the phosphor film prior to deposition of the optically transparent and electrically conductive film. Such further thin film dielectric layers may be comprised of alumina silicon oxynitride, yttria, hafnia zinc sulphide, barium tantalate, barium titanate, tantalum oxide, aluminum titanate, strontium titanate and the like.
  • FIG. 1 shows a cross-section of an electroluminescent device utilizing a phosphor of the present invention.
  • FIG. 2 shows a plan view of the electroluminescent device.
  • the electroluminescent device generally indicated by 10 , has a substrate 12 on which is located row electrode 14 .
  • Thick film dielectric 16 has thin film dielectric 18 thereon.
  • Thin film dielectric 18 is shown with three pixel columns, referred to as 20 , 22 and 24 , located thereon.
  • the pixel columns contain phosphors to provide the three basic colours viz. red, green and blue.
  • Pixel column 20 has red phosphor 26 located in contact with thin film dielectric 18 .
  • Another thin film dielectric 28 is located on red phosphor 26
  • column electrode 30 is located on thin film dielectric 28
  • pixel column 22 has green phosphor 32 on thin film dielectric 18 , with thin film dielectric 34 and column electrode 36 thereon.
  • Pixel column 24 has blue phosphor 38 on thin film dielectric 18 , with thin film dielectric 40 and column electrode 42 thereon.
  • electroluminescent device 10 does not have an optical filter associated with the blue phosphor 42 .
  • blue phosphor 42 is a phosphor of the invention and is as described herein.
  • the phosphor of the present invention provides a high luminosity blue emission that does not require an optical filter in order to achieve improved and acceptable colour coordinates for the blue sub-pixel element of a full colour electroluminescent display.
  • the blue sub-pixel pixel performance is believed to meet the luminosity and colour temperature specifications for current generation cathode ray tube displays
  • a magnesium barium thioaluminate phosphor film was formed on a thick film substrate and annealed at a temperature of about 850° C.
  • This luminosity allows for an areal blue luminosity of 30 candelas per square meter when 50% of the active area of a pixel is occupied by the blue sub-pixel.
  • Areal blue luminosity is defined as the blue luminosity averaged over the nominal image area of a display.
  • a series of magnesium barium thioaluminate thin film phosphors materials were prepared by blending powders of aluminum sulphide, barium sulphide, magnesium sulphide and europium sulphide in the desired ratios and making pressed pellets of the blended powders.
  • the pellets were placed in an alumina boat and fired in a nitrogen atmosphere using a belt furnace, using a temperature profile such that the films were subject to a nominal peak temperature of 900° C. for about 7 minutes.
  • the actual sample temperature may have been lower than 900° C. because of the thermal capacity of the alumina boat.
  • the reduced melting temperature for the magnesium-containing materials indicates that the materials should be amenable to annealing at lower temperatures than the materials not containing magnesium, which would make them more compatible with thick film dielectric substrates.
  • Magnesium barium thioaluminate materials of the formula Mg a Ba 1-a Al 2 S 4 :Eu, with a nominal value of a 0.5 and a europium concentration equal to 3 atomic percent of the sum of the magnesium and barium concentrations, were deposited as thin films on thick film dielectric structures.
  • the deposition method used was dual source electron beam evaporation, in which one source was a pressed pellet of aluminum sulphide (Al 2 S 3 ) and the other source was a pressed pellet consisting of a mixture of barium sulphide, magnesium sulphide and europium sulphide.
  • the phosphor films were annealed at a nominal temperature of 850° C. under nitrogen.
  • composition of the materials in this example is for the source materials, and the composition of the deposited films may vary from these compositions.
  • the electroluminescent emission of the resultant phosphor showed the same blue shift with respect to material not containing magnesium as was observed with photoluminescence measurements.
  • the luminance of the magnesium-containing phosphor was about 50 cd/m 2 at a voltage that was 50 volts above the threshold voltage of 160 volts for the fabricated electroluminescent pixel, and 90 cd/m 2 at 100 volts above the threshold voltage.
  • the excitation frequency was 120 Hz.
  • the luminance of a barium thioaluminate phosphor film without magnesium at the same excitation frequency, in a structure that was not identical, was about 25 to 30 cd/m 2 at 50 volts above the 190 volt threshold.
  • the luminance was about 40 cd/m 2 at 70 volts above the threshold voltage.
  • Example III The procedure of Example III was repeated, except that europium oxide (Eu 2 O 3 ) was used instead of europium sulphide.
  • the remaining compounds were aluminum sulphide, barium sulphide and magnesium sulphide, as in Example III.
  • the nominal value of a in the formula of Example III was 0.5.
  • the europium concentration was 3 atomic percent of the sum of the magnesium and barium concentrations.
  • This example illustrates the ability to control the elemental composition of a magnesium barium thioaluminate phosphor film deposited on a thick film dielectric structure using the method described in Example II. This example also shows the dependence on elemental composition of the colour coordinates of the light emission from the resulting electroluminescent element.
  • Two source pellets were used to deposit the phosphor film viz. aluminum sulphide and europium doped magnesium-barium sulphide.
  • the deposition rate of aluminum sulphide relative to that for the europium-doped magnesium-barium sulphide was controlled by varying the electron beam power for the aluminum sulphide source pellet.
  • the deposition rates of the two source materials were monitored using independent rate monitors.
  • the composition of the deposited films was measured using secondary ion mass spectroscopy (SIMS).
  • FIG. 3 shows the ratio of aluminum to the combined alkaline earth peaks i.e. the sum of the magnesium and barium peaks, observed in the SIMS spectrum plotted against the relative atomic deposition rate ratio for the two source materials.
  • the ratio of aluminum to alkaline earth elements in the phosphor film is proportional to the relative deposition rates of the source materials.
  • FIG. 3 also shows the y colour coordinate of the electroluminescent emission for the phosphor materials as a function of the elemental composition. It is evident over the range evaluated that the y coordinate is not very sensitive to the elemental composition, although a tendency to a somewhat higher value is noted for the sample with the lowest aluminum concentration. The observed variation may be due, however, to other variables inherent in the materials and processes used in the fabrication of the pixel used. Although not shown, the x colour coordinate and the luminance also did not show any systematic dependence on the elemental composition over the range evaluated.
  • the europium concentration was varied so that the atomic ratio of europium to barium was in the range of 4 to 25 percent.
  • the films were deposited in an atmosphere of up to 0.2 milliTorr of hydrogen sulphide.
  • the data indicates a change in the photoluminescence properties as the europium concentration is increased above 20 atomic percent, although it cannot be concluded from this example that this change is directly related to the increase in the europium concentration.
  • Powders to form magnesium barium thioaluminate were prepared according to the method used in Example II, except that the powders were annealed at a temperature of 1000° C. under nitrogen for 10 minutes, rather than at 900° C.
  • the fraction “a” of barium replaced by magnesium in the formula Mg a Ba 1-a Al 2 S 4 :Eu was varied over the range 0.10, 0.30 0.50, 0.70 and 0.90.
  • the CIE x-coordinate for the photoluminescence was 0.14, independent of the value of “a”.
  • the phase having a crystal structure very close to that of barium thioaluminate (“the barium thioaluminate-like phase”) may have a lattice constant slightly smaller than that for pure barium thioaluminate, possibly due to the substitution of some barium in the crystal lattice by magnesium.
  • the crystal differs from that of manganese thioaluminate in that an XRD peak is present corresponding to a crystal lattice spacing of 11.99 Angstroms that possibly corresponds to a superlattice distortion relative to a manganese thioaluminate structure.
  • the additional phases are consistent with the presence of a short wavelength secondary emission peak in the PL spectra.
  • There is also a slight shift of the main PL peak towards longer wavelength which indicates a variability in the atomic environment of the europium activator in the main phase as the nominal composition is varied. This might indicate a range for the elemental composition of the main phase.
  • the resultant deconvoluted peak revealed the presence of small peaks shifted in wavelength from the main peak.
  • results obtained correlate well with the XRD results, which indicate the presence of a barium thioaluminate-like phase for low values of “a” and a multiplicity of other distinct phases for “a” near 0.9.
  • results also correlate with the visible multi-colour light emission from the sample with “a” about equal to 0.9 when the sample is under ultraviolet emission.

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US09/798,203 2000-09-14 2001-03-02 Magnesium barium thioaluminate and related phosphor materials Abandoned US20020122895A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
US09/798,203 US20020122895A1 (en) 2000-09-14 2001-03-02 Magnesium barium thioaluminate and related phosphor materials
DE60114867T DE60114867T2 (de) 2000-09-14 2001-08-30 Magnesium barium thioaluminate und zugeordnete phosphormaterialien
EP01966898A EP1323337B1 (en) 2000-09-14 2001-08-30 Magnesium barium thioaluminate and related phosphor materials
AU2001287442A AU2001287442A1 (en) 2000-09-14 2001-08-30 Magnesium barium thioaluminate and related phosphor materials
JP2002526805A JP5073148B2 (ja) 2000-09-14 2001-08-30 マグネシウムバリウムチオアルミネート及び同類の発光体物質
PCT/CA2001/001234 WO2002023957A1 (en) 2000-09-14 2001-08-30 Magnesium barium thioaluminate and related phosphor materials
AT01966898T ATE309689T1 (de) 2000-09-14 2001-08-30 Magnesium barium thioaluminate und zugeordnete phosphormaterialien
CA002421171A CA2421171C (en) 2000-09-14 2001-08-30 Magnesium barium thioaluminate and related phosphor materials
US10/441,872 US6919682B2 (en) 2000-09-14 2003-05-20 Magnesium barium thioaluminate and related phosphor materials

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US7582228B2 (en) 2004-08-06 2009-09-01 Ifire Ip Corporation Barium thioaluminate phosphor materials with novel crystal structures
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US20060027788A1 (en) * 2004-08-06 2006-02-09 Stiles James A R Barium thioaluminate phosphor materials with novel crystal structures
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CA2421171C (en) 2008-11-18
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DE60114867D1 (de) 2005-12-15

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