CA2171548A1 - Corps fritte en nitrure d'aluminium, possedant une haute conductivite thermique; methode de preparation - Google Patents

Corps fritte en nitrure d'aluminium, possedant une haute conductivite thermique; methode de preparation

Info

Publication number
CA2171548A1
CA2171548A1 CA 2171548 CA2171548A CA2171548A1 CA 2171548 A1 CA2171548 A1 CA 2171548A1 CA 2171548 CA2171548 CA 2171548 CA 2171548 A CA2171548 A CA 2171548A CA 2171548 A1 CA2171548 A1 CA 2171548A1
Authority
CA
Canada
Prior art keywords
weight
earth metal
percent
aluminum nitride
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA 2171548
Other languages
English (en)
Inventor
Junhong Zhao
Theresa A. Guiton
Yi-Hung Chiao
William Rafaniello
Noboru Hashimoto
Kyoji Tanaka
Susumu Kajita
Hiroyoshi Yoden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Dow Chemical Co
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/089,558 external-priority patent/US5330692A/en
Application filed by Individual filed Critical Individual
Publication of CA2171548A1 publication Critical patent/CA2171548A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

Produit fritté en nitrure d'aluminium à conductivité thermique élevée (au moins 100 W/m.K), préparé à une température de frittage inférieure à 1850 DEG C et souvent inférieure à 1650 DEG C, au moyen d'une combinaison frittable de poudre de nitrure d'aluminium et d'au moins trois adjuvants de frittage. Les adjuvants de frittage sont, entre autres, une source d'oxyde métallique des terres rares, une source d'oxyde métallique alcalino-terreux, une source de bore et éventuellement une source d'oxyde d'aluminium. Les combinaisons frittables peuvent également s'utiliser dans la préparation de substrats multicouches cocuits.
CA 2171548 1993-07-12 1994-04-18 Corps fritte en nitrure d'aluminium, possedant une haute conductivite thermique; methode de preparation Abandoned CA2171548A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/089,558 1993-07-12
US08/089,558 US5330692A (en) 1992-12-22 1993-07-12 Process for producing an aluminum nitride sintered product

Publications (1)

Publication Number Publication Date
CA2171548A1 true CA2171548A1 (fr) 1995-01-26

Family

ID=22218308

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2171548 Abandoned CA2171548A1 (fr) 1993-07-12 1994-04-18 Corps fritte en nitrure d'aluminium, possedant une haute conductivite thermique; methode de preparation

Country Status (3)

Country Link
AU (1) AU7014894A (fr)
CA (1) CA2171548A1 (fr)
WO (1) WO1995002563A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1655743B1 (fr) * 1998-02-23 2010-09-15 Murata Manufacturing Co., Ltd. Matériau pour résistance, pâte pour résistance, résistance utilisant ce matériau et substrat multicouche en céramique
CN112830795A (zh) * 2019-11-22 2021-05-25 福建臻璟新材料科技有限公司 一种水基凝胶体系制备氮化铝坯体的制备工艺
CN112830794A (zh) * 2019-11-22 2021-05-25 福建臻璟新材料科技有限公司 一种有机单体凝胶法制备高导热和高强度氮化铝陶瓷的制备工艺
CN112374896B (zh) * 2020-11-12 2022-05-27 广东工业大学 一种高性能氮化铝陶瓷基板的浆料和制备方法
CN112811910A (zh) * 2021-03-26 2021-05-18 无锡海古德新技术有限公司 一种氮化铝基功能陶瓷材料及其制备方法
CN113480317A (zh) * 2021-07-05 2021-10-08 哈尔滨理工大学 一种高导热AlN陶瓷低温烧结的制备方法
CN115504793B (zh) * 2022-10-18 2023-07-28 福建华清电子材料科技有限公司 一种高导热氮化铝陶瓷的制备方法
CN115974012A (zh) * 2022-12-30 2023-04-18 雅安百图高新材料股份有限公司 一种氮化铝粉体及其制备工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108887A (en) * 1959-05-06 1963-10-29 Carborundum Co Refractory articles and method of making same
JPS60195059A (ja) * 1984-03-15 1985-10-03 株式会社トクヤマ 複合焼結体
US4746637A (en) * 1984-11-08 1988-05-24 Kabushiki Kaisha Toshiba Aluminum nitride sintered body and process for producing the same
US4877760A (en) * 1985-05-22 1989-10-31 Ngk Spark Plug Co., Ltd. Aluminum nitride sintered body with high thermal conductivity and process for producing same
JPH02221163A (ja) * 1989-02-21 1990-09-04 Asahi Chem Ind Co Ltd 窒化アルミニウム焼結体の製造方法
JPH03146471A (ja) * 1989-10-31 1991-06-21 Kawasaki Steel Corp 窒化アルミニウム焼結体の製造方法
JPH04130064A (ja) * 1990-09-20 1992-05-01 Hitachi Metals Ltd 遮光性及び高熱伝導性窒化アルミニウム焼結体
JP2698009B2 (ja) * 1992-07-20 1998-01-19 松下電工株式会社 窒化アルミニウム焼結体の製造方法
US5330692A (en) * 1992-12-22 1994-07-19 Matsushita Electric Works, Ltd. Process for producing an aluminum nitride sintered product

Also Published As

Publication number Publication date
WO1995002563A1 (fr) 1995-01-26
AU7014894A (en) 1995-02-13

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