CA2162596A1 - Ultrasonic enhancement of aluminum step coverage and apparatus - Google Patents

Ultrasonic enhancement of aluminum step coverage and apparatus

Info

Publication number
CA2162596A1
CA2162596A1 CA002162596A CA2162596A CA2162596A1 CA 2162596 A1 CA2162596 A1 CA 2162596A1 CA 002162596 A CA002162596 A CA 002162596A CA 2162596 A CA2162596 A CA 2162596A CA 2162596 A1 CA2162596 A1 CA 2162596A1
Authority
CA
Canada
Prior art keywords
semiconductor
ultrasonic energy
vias
sputter
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002162596A
Other languages
English (en)
French (fr)
Inventor
Michael G. Ward
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2162596A1 publication Critical patent/CA2162596A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CA002162596A 1993-06-17 1994-06-15 Ultrasonic enhancement of aluminum step coverage and apparatus Abandoned CA2162596A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7943893A 1993-06-17 1993-06-17
US079,438 1993-06-17

Publications (1)

Publication Number Publication Date
CA2162596A1 true CA2162596A1 (en) 1995-01-05

Family

ID=22150548

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002162596A Abandoned CA2162596A1 (en) 1993-06-17 1994-06-15 Ultrasonic enhancement of aluminum step coverage and apparatus

Country Status (8)

Country Link
US (1) US5520784A (enExample)
EP (1) EP0707662A4 (enExample)
JP (1) JPH08511656A (enExample)
KR (1) KR960703179A (enExample)
AU (1) AU7109694A (enExample)
CA (1) CA2162596A1 (enExample)
TW (1) TW239900B (enExample)
WO (1) WO1995000676A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795399A (en) * 1994-06-30 1998-08-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product
US5610103A (en) * 1995-12-12 1997-03-11 Applied Materials, Inc. Ultrasonic wave assisted contact hole filling
WO1999027579A1 (en) * 1997-11-26 1999-06-03 Applied Materials, Inc. Damage-free sculptured coating deposition
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6077404A (en) * 1998-02-17 2000-06-20 Applied Material, Inc. Reflow chamber and process
US6159853A (en) * 1999-08-04 2000-12-12 Industrial Technology Research Institute Method for using ultrasound for assisting forming conductive layers on semiconductor devices
US6361880B1 (en) 1999-12-22 2002-03-26 International Business Machines Corporation CVD/PVD/CVD/PVD fill process
US6766813B1 (en) * 2000-08-01 2004-07-27 Board Of Regents, The University Of Texas System Apparatus and method for cleaning a wafer
US6896774B2 (en) * 2003-03-06 2005-05-24 Intel Corporation Acoustic streaming of condensate during sputtered metal vapor deposition
US20100209623A1 (en) * 2009-02-18 2010-08-19 Electronics And Telecommunications Research Institute Apparatus for growing large area vanadium dioxide thin film and method of growing large area oxide thin film in the apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388517A (en) * 1980-09-22 1983-06-14 Texas Instruments Incorporated Sublimation patterning process
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
US4521286A (en) * 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
US4891112A (en) * 1985-11-12 1990-01-02 Eastman Kodak Company Sputtering method for reducing hillocking in aluminum layers formed on substrates
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
US4721689A (en) * 1986-08-28 1988-01-26 International Business Machines Corporation Method for simultaneously forming an interconnection level and via studs
US4791074A (en) * 1986-08-29 1988-12-13 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor apparatus
JPS63153265A (ja) * 1986-12-17 1988-06-25 Nec Corp スパツタ装置
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
DE3726731A1 (de) * 1987-08-11 1989-02-23 Hartec Ges Fuer Hartstoffe Und Verfahren zum aufbringen von ueberzuegen auf gegenstaende mittels magnetfeldunterstuetzter kathodenzerstaeubung im vakuum
JPS6462461A (en) * 1987-08-31 1989-03-08 Hitachi Ltd Sputtering device
US4994162A (en) * 1989-09-29 1991-02-19 Materials Research Corporation Planarization method
US4970176A (en) * 1989-09-29 1990-11-13 Motorola, Inc. Multiple step metallization process
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing

Also Published As

Publication number Publication date
JPH08511656A (ja) 1996-12-03
EP0707662A4 (en) 1998-02-25
KR960703179A (ko) 1996-06-19
EP0707662A1 (en) 1996-04-24
US5520784A (en) 1996-05-28
WO1995000676A1 (en) 1995-01-05
AU7109694A (en) 1995-01-17
TW239900B (enExample) 1995-02-01

Similar Documents

Publication Publication Date Title
US5028565A (en) Process for CVD deposition of tungsten layer on semiconductor wafer
US6544599B1 (en) Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom
CA2067565C (en) Deposition of tungsten
US6313027B1 (en) Method for low thermal budget metal filling and planarization of contacts vias and trenches
US5580823A (en) Process for fabricating a collimated metal layer and contact structure in a semiconductor device
US6080665A (en) Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum
US6767829B2 (en) Plasma deposition method and system
KR0134326B1 (ko) 불활성 가스이온 플라즈마의 조사에 의한 반도체 디바이스의 접촉홀 충진 방법 및 장치
JPH08107069A (ja) スパッタリングされた材料の均一膜厚堆積
US5520784A (en) Ultrasonic enhancement of aluminum step coverage and apparatus
US6887353B1 (en) Tailored barrier layer which provides improved copper interconnect electromigration resistance
TW413848B (en) Semiconductor device with insulation film made of fluorine added-carbon film and method of manufacturing the same
US5219790A (en) Method for forming metallization layer of wiring in semiconductor integrated circuits
JP2837087B2 (ja) 薄膜形成方法
KR100427905B1 (ko) 금속의 화학 증착에서 모서리 효과를 제거하기 위한 방법
US6541369B2 (en) Method and apparatus for reducing fixed charges in a semiconductor device
WO2000006795A1 (en) Cvd tungsten deposition on oxide substrates
JPH06200376A (ja) 金薄膜気相成長方法
JPH06184745A (ja) 連続式スパッタリング装置
JP3988256B2 (ja) 成膜方法
JPS59123236A (ja) 薄膜の形成方法
JP2831770B2 (ja) 堆積膜形成法
JPH08115903A (ja) 半導体装置の製造方法およびプラズマエッチング装置
JPH09171976A (ja) 高アスペクト比フィーチャの側面と底部に膜厚制御可能な被膜を付着する方法および装置
JPH06283440A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
FZDE Discontinued