CA2085524A1 - Transistor a effet de champ et sa methode de fabrication - Google Patents
Transistor a effet de champ et sa methode de fabricationInfo
- Publication number
- CA2085524A1 CA2085524A1 CA002085524A CA2085524A CA2085524A1 CA 2085524 A1 CA2085524 A1 CA 2085524A1 CA 002085524 A CA002085524 A CA 002085524A CA 2085524 A CA2085524 A CA 2085524A CA 2085524 A1 CA2085524 A1 CA 2085524A1
- Authority
- CA
- Canada
- Prior art keywords
- impurity region
- highly doped
- doped impurity
- drain
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000005669 field effect Effects 0.000 title claims 12
- 239000012535 impurity Substances 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 39
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000002344 surface layer Substances 0.000 claims abstract description 9
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 238000000992 sputter etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 241000905957 Channa melasoma Species 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2239699A JPH04119636A (ja) | 1990-09-10 | 1990-09-10 | 電界効果トランジスタおよびその製造方法 |
| US07/988,258 US5382821A (en) | 1992-12-14 | 1992-12-14 | High power field effect transistor |
| CA002085524A CA2085524A1 (fr) | 1990-09-10 | 1992-12-16 | Transistor a effet de champ et sa methode de fabrication |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2239699A JPH04119636A (ja) | 1990-09-10 | 1990-09-10 | 電界効果トランジスタおよびその製造方法 |
| US07/988,258 US5382821A (en) | 1992-12-14 | 1992-12-14 | High power field effect transistor |
| CA002085524A CA2085524A1 (fr) | 1990-09-10 | 1992-12-16 | Transistor a effet de champ et sa methode de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2085524A1 true CA2085524A1 (fr) | 1994-06-17 |
Family
ID=27169286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002085524A Abandoned CA2085524A1 (fr) | 1990-09-10 | 1992-12-16 | Transistor a effet de champ et sa methode de fabrication |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04119636A (fr) |
| CA (1) | CA2085524A1 (fr) |
-
1990
- 1990-09-10 JP JP2239699A patent/JPH04119636A/ja active Pending
-
1992
- 1992-12-16 CA CA002085524A patent/CA2085524A1/fr not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04119636A (ja) | 1992-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |