CA2080080A1 - Tec a canaux etroits possedant des caracteristiques de bruyance ameliorees - Google Patents

Tec a canaux etroits possedant des caracteristiques de bruyance ameliorees

Info

Publication number
CA2080080A1
CA2080080A1 CA2080080A CA2080080A CA2080080A1 CA 2080080 A1 CA2080080 A1 CA 2080080A1 CA 2080080 A CA2080080 A CA 2080080A CA 2080080 A CA2080080 A CA 2080080A CA 2080080 A1 CA2080080 A1 CA 2080080A1
Authority
CA
Canada
Prior art keywords
layers
line
channel fet
noise characteristics
improved noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2080080A
Other languages
English (en)
Other versions
CA2080080C (fr
Inventor
Yoshikazu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Yoshikazu Nakagawa
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yoshikazu Nakagawa, Rohm Co., Ltd. filed Critical Yoshikazu Nakagawa
Publication of CA2080080A1 publication Critical patent/CA2080080A1/fr
Application granted granted Critical
Publication of CA2080080C publication Critical patent/CA2080080C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
CA002080080A 1991-10-21 1992-10-07 Tec a canaux etroits possedant des caracteristiques de bruyance ameliorees Expired - Fee Related CA2080080C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3-302281 1991-10-21
JP3302281A JPH05114615A (ja) 1991-10-21 1991-10-21 化合物半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CA2080080A1 true CA2080080A1 (fr) 1993-04-22
CA2080080C CA2080080C (fr) 1997-09-16

Family

ID=17907119

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002080080A Expired - Fee Related CA2080080C (fr) 1991-10-21 1992-10-07 Tec a canaux etroits possedant des caracteristiques de bruyance ameliorees

Country Status (5)

Country Link
US (1) US5726467A (fr)
EP (1) EP0538792B1 (fr)
JP (1) JPH05114615A (fr)
CA (1) CA2080080C (fr)
DE (1) DE69218875T2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242765B1 (en) * 1991-05-21 2001-06-05 Nec Corporation Field effect transistor and its manufacturing method
US6160280A (en) * 1996-03-04 2000-12-12 Motorola, Inc. Field effect transistor
CN117203776A (zh) * 2021-04-30 2023-12-08 索尼半导体解决方案公司 半导体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021789A (en) * 1975-09-29 1977-05-03 International Business Machines Corporation Self-aligned integrated circuits
FR2369652A1 (fr) * 1976-10-29 1978-05-26 Radiotechnique Compelec Memoire morte programmable a transistors
JPS61228675A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2609587B2 (ja) * 1986-04-21 1997-05-14 株式会社日立製作所 半導体装置
JPH01501272A (ja) * 1986-10-27 1989-04-27 ヒユーズ・エアクラフト・カンパニー ストライプ状のチャンネルのトランジスタおよびその製造方法

Also Published As

Publication number Publication date
DE69218875T2 (de) 1997-09-18
DE69218875D1 (de) 1997-05-15
EP0538792A2 (fr) 1993-04-28
EP0538792B1 (fr) 1997-04-09
CA2080080C (fr) 1997-09-16
EP0538792A3 (en) 1993-06-02
JPH05114615A (ja) 1993-05-07
US5726467A (en) 1998-03-10

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed