CA2050435A1 - Dispositif photosensible - Google Patents
Dispositif photosensibleInfo
- Publication number
- CA2050435A1 CA2050435A1 CA2050435A CA2050435A CA2050435A1 CA 2050435 A1 CA2050435 A1 CA 2050435A1 CA 2050435 A CA2050435 A CA 2050435A CA 2050435 A CA2050435 A CA 2050435A CA 2050435 A1 CA2050435 A1 CA 2050435A1
- Authority
- CA
- Canada
- Prior art keywords
- region
- photo
- conductivity type
- sensing
- sensing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2230206A JPH04111477A (ja) | 1990-08-31 | 1990-08-31 | 受光素子 |
JP230206/1990 | 1990-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2050435A1 true CA2050435A1 (fr) | 1992-03-01 |
CA2050435C CA2050435C (fr) | 1999-02-02 |
Family
ID=16904238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002050435A Expired - Fee Related CA2050435C (fr) | 1990-08-31 | 1991-08-30 | Dispositif photosensible |
Country Status (6)
Country | Link |
---|---|
US (1) | US5304824A (fr) |
EP (1) | EP0473198B1 (fr) |
JP (1) | JPH04111477A (fr) |
KR (1) | KR950003950B1 (fr) |
CA (1) | CA2050435C (fr) |
DE (1) | DE69128751T2 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3245838B2 (ja) * | 1992-02-03 | 2002-01-15 | 住友電気工業株式会社 | 半導体レーザ装置 |
US5542018A (en) * | 1990-08-31 | 1996-07-30 | Kuhara; Yoshiki | Semiconductor laser device making use of photodiode chip |
CA2119176C (fr) * | 1993-03-19 | 1998-06-23 | Masahiro Kobayashi | Detecteur de lumiere a semiconducteur |
US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
JPH08204224A (ja) * | 1995-01-23 | 1996-08-09 | Sumitomo Electric Ind Ltd | 化合物半導体受光素子及びその製造方法 |
JPH09289333A (ja) * | 1996-04-23 | 1997-11-04 | Mitsubishi Electric Corp | 半導体受光素子 |
JP3436009B2 (ja) * | 1996-07-31 | 2003-08-11 | 住友電気工業株式会社 | 光半導体素子 |
CA2227804C (fr) * | 1997-02-03 | 2002-10-01 | Yasushi Fujimura | Module a photodiodes et methode pour le fabriquer |
US6081020A (en) * | 1998-02-20 | 2000-06-27 | Lucent Technologies Inc. | Linear PIN photodiode |
US6326649B1 (en) * | 1999-01-13 | 2001-12-04 | Agere Systems, Inc. | Pin photodiode having a wide bandwidth |
JP2008066497A (ja) * | 2006-09-07 | 2008-03-21 | Sony Corp | 受光装置および受光装置の製造方法 |
JP5560818B2 (ja) * | 2010-03-25 | 2014-07-30 | 住友電気工業株式会社 | 受光素子、受光素子アレイ、ハイブリッド型検出装置、光学センサ装置 |
JP7454917B2 (ja) | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US11901379B2 (en) | 2018-12-12 | 2024-02-13 | Hamamatsu Photonics K.K. | Photodetector |
US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
WO2020121851A1 (fr) * | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Dispositif de détection optique |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57173276A (en) * | 1981-04-17 | 1982-10-25 | Nec Corp | Solid-state image pickup device |
JPS5833881A (ja) * | 1981-08-21 | 1983-02-28 | Mitsubishi Electric Corp | 光電変換装置 |
JPS60171768A (ja) * | 1984-02-17 | 1985-09-05 | Internatl Rectifier Corp Japan Ltd | プレ−ナ型半導体装置 |
JPS60182778A (ja) * | 1984-02-29 | 1985-09-18 | Fujitsu Ltd | 半導体受光装置 |
JPS6195580A (ja) * | 1984-10-17 | 1986-05-14 | Hitachi Ltd | 受光素子およびこの受光素子を内臓した光電子装置 |
JPH0799782B2 (ja) * | 1985-06-18 | 1995-10-25 | 株式会社ニコン | 半導体光検出装置 |
EP0216572B1 (fr) * | 1985-09-24 | 1995-04-05 | Kabushiki Kaisha Toshiba | Photodétecteur à semi-conducteur ayant un profil d'impureté à deux échelons |
US4819039A (en) * | 1986-12-22 | 1989-04-04 | American Telephone And Telegraph Co. At&T Laboratories | Devices and device fabrication with borosilicate glass |
JPS63187671A (ja) * | 1987-01-30 | 1988-08-03 | Furukawa Electric Co Ltd:The | 1.3μm帯半導体受光素子 |
JPS6428872A (en) * | 1987-07-24 | 1989-01-31 | Hitachi Ltd | Semiconductor element for detecting radiation |
JPS6447081A (en) * | 1987-08-18 | 1989-02-21 | Toshiba Corp | Semiconductor photodetector |
JPH01262672A (ja) * | 1988-04-14 | 1989-10-19 | Sanyo Electric Co Ltd | Pinダイオード |
US4901153A (en) * | 1988-08-10 | 1990-02-13 | Seiko Instruments Inc. | Image sensor with reduced surface reflection interference |
-
1990
- 1990-08-31 JP JP2230206A patent/JPH04111477A/ja active Pending
-
1991
- 1991-08-30 CA CA002050435A patent/CA2050435C/fr not_active Expired - Fee Related
- 1991-08-31 KR KR1019910015188A patent/KR950003950B1/ko not_active IP Right Cessation
- 1991-09-02 EP EP91114760A patent/EP0473198B1/fr not_active Expired - Lifetime
- 1991-09-02 DE DE69128751T patent/DE69128751T2/de not_active Expired - Fee Related
-
1993
- 1993-04-08 US US08/050,720 patent/US5304824A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04111477A (ja) | 1992-04-13 |
KR920005395A (ko) | 1992-03-28 |
KR950003950B1 (ko) | 1995-04-21 |
CA2050435C (fr) | 1999-02-02 |
DE69128751D1 (de) | 1998-02-26 |
EP0473198B1 (fr) | 1998-01-21 |
US5304824A (en) | 1994-04-19 |
EP0473198A1 (fr) | 1992-03-04 |
DE69128751T2 (de) | 1998-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |