CA2048785A1 - Imageur a structures ameliorees de transistor en couches minces et de dispositifs photosensibles - Google Patents
Imageur a structures ameliorees de transistor en couches minces et de dispositifs photosensiblesInfo
- Publication number
- CA2048785A1 CA2048785A1 CA 2048785 CA2048785A CA2048785A1 CA 2048785 A1 CA2048785 A1 CA 2048785A1 CA 2048785 CA2048785 CA 2048785 CA 2048785 A CA2048785 A CA 2048785A CA 2048785 A1 CA2048785 A1 CA 2048785A1
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor material
- layer
- thin film
- photosensitive
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000001465 metallisation Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 238000003491 array Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000059 patterning Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000006735 deficit Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US59342290A | 1990-10-05 | 1990-10-05 | |
| US593,422 | 1990-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2048785A1 true CA2048785A1 (fr) | 1992-04-06 |
Family
ID=24374645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2048785 Abandoned CA2048785A1 (fr) | 1990-10-05 | 1991-08-08 | Imageur a structures ameliorees de transistor en couches minces et de dispositifs photosensibles |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0504396A1 (fr) |
| CA (1) | CA2048785A1 (fr) |
| WO (1) | WO1992006502A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04321273A (ja) * | 1991-04-19 | 1992-11-11 | Fuji Xerox Co Ltd | イメージセンサ |
| US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
| DE69427358T2 (de) * | 1994-06-16 | 2001-11-15 | Koninklijke Philips Electronics N.V., Eindhoven | Verfahren und vorrichtung zur übertragung von videotextseiten |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4746989A (en) * | 1984-05-04 | 1988-05-24 | Energy Conversion Devices, Inc. | Contact-type imager for scanning moving image-bearing members |
| EP0251563A3 (fr) * | 1986-06-17 | 1991-01-09 | Tokyo Electric Co. Ltd. | Dispositif de conversion photoélectrique |
| US4889983A (en) * | 1987-11-24 | 1989-12-26 | Mitsubishi Denki Kabushiki Kaisha | Image sensor and production method thereof |
-
1991
- 1991-08-08 CA CA 2048785 patent/CA2048785A1/fr not_active Abandoned
- 1991-10-02 EP EP19920900057 patent/EP0504396A1/fr not_active Withdrawn
- 1991-10-02 WO PCT/US1991/007336 patent/WO1992006502A1/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0504396A1 (fr) | 1992-09-23 |
| WO1992006502A1 (fr) | 1992-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |