CA2044361A1 - Dispositif et methode de stockage a transistors bipolaires - Google Patents
Dispositif et methode de stockage a transistors bipolairesInfo
- Publication number
- CA2044361A1 CA2044361A1 CA2044361A CA2044361A CA2044361A1 CA 2044361 A1 CA2044361 A1 CA 2044361A1 CA 2044361 A CA2044361 A CA 2044361A CA 2044361 A CA2044361 A CA 2044361A CA 2044361 A1 CA2044361 A1 CA 2044361A1
- Authority
- CA
- Canada
- Prior art keywords
- memory cell
- bipolar transistor
- state elements
- transistor memory
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54639590A | 1990-06-29 | 1990-06-29 | |
US546,395 | 1990-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2044361A1 true CA2044361A1 (fr) | 1991-12-30 |
CA2044361C CA2044361C (fr) | 1996-09-24 |
Family
ID=24180252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002044361A Expired - Fee Related CA2044361C (fr) | 1990-06-29 | 1991-06-11 | Dispositif et methode de stockage a transistors bipolaires |
Country Status (6)
Country | Link |
---|---|
US (1) | US5289409A (fr) |
JP (1) | JPH05151779A (fr) |
CA (1) | CA2044361C (fr) |
DE (1) | DE4121445C2 (fr) |
FR (1) | FR2664081A1 (fr) |
GB (1) | GB2247550B (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3288189B2 (ja) * | 1994-12-12 | 2002-06-04 | 三菱電機株式会社 | スタティックランダムアクセスメモリ |
JPH1139880A (ja) * | 1997-07-16 | 1999-02-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
US7196925B1 (en) * | 2004-08-26 | 2007-03-27 | Cypress Semiconductor Corporation | Memory array with current limiting device for preventing particle induced latch-up |
US8837204B2 (en) * | 2009-02-15 | 2014-09-16 | NDEP Technologies Ltd. | Four-transistor and five-transistor BJT-CMOS asymmetric SRAM cells |
US8526220B2 (en) * | 2011-06-12 | 2013-09-03 | International Business Machines Corporation | Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform |
US8929133B2 (en) * | 2012-12-02 | 2015-01-06 | International Business Machines Corporation | Complementary SOI lateral bipolar for SRAM in a CMOS platform |
US9460771B2 (en) * | 2014-09-25 | 2016-10-04 | Kilopass Technology, Inc. | Two-transistor thyristor SRAM circuit and methods of operation |
CN106030718A (zh) * | 2014-09-25 | 2016-10-12 | 克劳帕斯科技有限公司 | 保持和刷新闸流晶体管随机存取存储器中的数据的方法 |
US9741413B2 (en) | 2014-09-25 | 2017-08-22 | Kilopass Technology, Inc. | Methods of reading six-transistor cross-coupled thyristor-based SRAM memory cells |
US9449669B2 (en) | 2014-09-25 | 2016-09-20 | Kilopass Technology, Inc. | Cross-coupled thyristor SRAM circuits and methods of operation |
EP3149736A4 (fr) * | 2014-09-25 | 2018-01-24 | Kilopass Technology, Inc. | Circuits sram d'assistance à l'écriture et procédés de fonctionnement |
US9613968B2 (en) | 2014-09-25 | 2017-04-04 | Kilopass Technology, Inc. | Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication |
US9496021B2 (en) * | 2014-09-25 | 2016-11-15 | Kilopass Technology, Inc. | Power reduction in thyristor random access memory |
US20160093624A1 (en) | 2014-09-25 | 2016-03-31 | Kilopass Technology, Inc. | Thyristor Volatile Random Access Memory and Methods of Manufacture |
US9564441B2 (en) * | 2014-09-25 | 2017-02-07 | Kilopass Technology, Inc. | Two-transistor SRAM semiconductor structure and methods of fabrication |
US9530482B2 (en) | 2014-09-25 | 2016-12-27 | Kilopass Technology, Inc. | Methods of retaining and refreshing data in a thyristor random access memory |
US9564199B2 (en) | 2014-09-25 | 2017-02-07 | Kilopass Technology, Inc. | Methods of reading and writing data in a thyristor random access memory |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3231763A (en) * | 1963-10-07 | 1966-01-25 | Bunker Ramo | Bistable memory element |
DE1524892B1 (de) * | 1967-12-15 | 1970-09-03 | Ibm Deutschland | Halbleiterspeicherzelle mit kreuzgekoppelten Multie mittertransistoren |
US3863229A (en) * | 1973-06-25 | 1975-01-28 | Ibm | Scr (or scs) memory array with internal and external load resistors |
US3918033A (en) * | 1974-11-11 | 1975-11-04 | Ibm | SCR memory cell |
GB1565146A (en) * | 1976-08-16 | 1980-04-16 | Fairchild Camera Instr Co | Random access momory cells |
US4288862A (en) * | 1977-12-21 | 1981-09-08 | Nippon Telegraph And Telephone Public Corp. | Memory circuit |
US4297598A (en) * | 1979-04-05 | 1981-10-27 | General Instrument Corporation | I2 L Sensing circuit with increased sensitivity |
DE2944141A1 (de) * | 1979-11-02 | 1981-05-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte speicheranordnung |
US4287575A (en) * | 1979-12-28 | 1981-09-01 | International Business Machines Corporation | High speed high density, multi-port random access memory cell |
JPS58147887A (ja) * | 1982-02-26 | 1983-09-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS62177961A (ja) * | 1986-01-31 | 1987-08-04 | Hitachi Ltd | 半導体装置 |
US4769785A (en) * | 1986-06-02 | 1988-09-06 | Advanced Micro Devices, Inc. | Writing speed of SCR-based memory cells |
US4858181A (en) * | 1987-07-07 | 1989-08-15 | Texas Instruments Incorporated | Fast recovery PNP loaded bipolar static RAM memory cell with an independent current path |
-
1991
- 1991-06-10 GB GB9112428A patent/GB2247550B/en not_active Expired - Fee Related
- 1991-06-11 CA CA002044361A patent/CA2044361C/fr not_active Expired - Fee Related
- 1991-06-26 JP JP3250159A patent/JPH05151779A/ja active Pending
- 1991-06-27 FR FR9108015A patent/FR2664081A1/fr active Granted
- 1991-06-28 DE DE4121445A patent/DE4121445C2/de not_active Expired - Fee Related
-
1993
- 1993-06-07 US US08/073,457 patent/US5289409A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE4121445C2 (de) | 1996-09-12 |
JPH05151779A (ja) | 1993-06-18 |
CA2044361C (fr) | 1996-09-24 |
DE4121445A1 (de) | 1992-01-23 |
US5289409A (en) | 1994-02-22 |
GB2247550B (en) | 1994-08-03 |
FR2664081A1 (fr) | 1992-01-03 |
FR2664081B1 (fr) | 1997-02-14 |
GB9112428D0 (en) | 1991-07-31 |
GB2247550A (en) | 1992-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |