CA1287155C - Semiconductor light emission device with multiple diffraction ring - Google Patents

Semiconductor light emission device with multiple diffraction ring

Info

Publication number
CA1287155C
CA1287155C CA000513585A CA513585A CA1287155C CA 1287155 C CA1287155 C CA 1287155C CA 000513585 A CA000513585 A CA 000513585A CA 513585 A CA513585 A CA 513585A CA 1287155 C CA1287155 C CA 1287155C
Authority
CA
Canada
Prior art keywords
light emission
semiconductor substrate
semiconductor light
semiconductor
epitaxial layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000513585A
Other languages
English (en)
French (fr)
Inventor
Tetsuya Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of CA1287155C publication Critical patent/CA1287155C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

Landscapes

  • Led Devices (AREA)
CA000513585A 1985-07-16 1986-07-11 Semiconductor light emission device with multiple diffraction ring Expired - Lifetime CA1287155C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-159055 1985-07-16
JP60159055A JPS6218076A (ja) 1985-07-16 1985-07-16 半導体発光装置

Publications (1)

Publication Number Publication Date
CA1287155C true CA1287155C (en) 1991-07-30

Family

ID=15685235

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000513585A Expired - Lifetime CA1287155C (en) 1985-07-16 1986-07-11 Semiconductor light emission device with multiple diffraction ring

Country Status (4)

Country Link
US (1) US5038354A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6218076A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1287155C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (2) GB2179203B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181220A (en) * 1985-07-16 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting light concentration device
US5101454A (en) * 1991-02-20 1992-03-31 At&T Bell Laboratories Light emitting diode with multifaceted reflector to increase coupling efficiency and alignment tolerance
FI116918B (fi) * 2000-12-13 2006-03-31 Modines Ltd Oy Säteenmuokkaaja
JP4589921B2 (ja) * 2003-04-02 2010-12-01 サン・マイクロシステムズ・インコーポレーテッド 対面した半導体チップ間の光通信
JP5993202B2 (ja) * 2012-05-15 2016-09-14 日本放送協会 発光素子および発光素子アレイ
DE102021129972A1 (de) * 2021-11-17 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649837A (en) * 1967-07-13 1972-03-14 Kurt Lehovec Diffractive image-forming means integrated into semiconducting devices
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US3668404A (en) * 1970-09-29 1972-06-06 Kurt Lehovec Electro-optical microtransducer comprising diffractive element monolithically integrated with photoelectric device
JPS5199989A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-02-28 1976-09-03 Fujitsu Ltd
US4057319A (en) * 1976-04-05 1977-11-08 National Research Development Corporation Optical system using a hologram coupler
FR2404307A1 (fr) * 1977-09-27 1979-04-20 Centre Nat Etd Spatiales Cellules solaires a double heterojonction et dispositif de montage
JPS5793163U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1980-11-28 1982-06-08
JPS59129467A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 複合光半導体素子
JPS60121657U (ja) * 1984-01-26 1985-08-16 株式会社島津製作所 フアイバ通信用発光ダイオ−ド

Also Published As

Publication number Publication date
GB2179203A (en) 1987-02-25
GB8908010D0 (en) 1989-05-24
GB2179203B (en) 1990-02-14
GB8617210D0 (en) 1986-08-20
US5038354A (en) 1991-08-06
GB2217911A (en) 1989-11-01
GB2217911B (en) 1990-02-28
JPS6218076A (ja) 1987-01-27
JPH0554713B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-13

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Legal Events

Date Code Title Description
MKLA Lapsed
MKLA Lapsed

Effective date: 19970730