FR2404307A1 - Cellules solaires a double heterojonction et dispositif de montage - Google Patents

Cellules solaires a double heterojonction et dispositif de montage

Info

Publication number
FR2404307A1
FR2404307A1 FR7728984A FR7728984A FR2404307A1 FR 2404307 A1 FR2404307 A1 FR 2404307A1 FR 7728984 A FR7728984 A FR 7728984A FR 7728984 A FR7728984 A FR 7728984A FR 2404307 A1 FR2404307 A1 FR 2404307A1
Authority
FR
France
Prior art keywords
solar cells
mounting device
heterojunction solar
double heterojunction
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7728984A
Other languages
English (en)
Other versions
FR2404307B1 (fr
Inventor
Jean Cacheux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Priority to FR7728984A priority Critical patent/FR2404307A1/fr
Priority to US05/946,084 priority patent/US4191593A/en
Priority to GB7838245A priority patent/GB2005471B/en
Publication of FR2404307A1 publication Critical patent/FR2404307A1/fr
Application granted granted Critical
Publication of FR2404307B1 publication Critical patent/FR2404307B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

a. Cellule solaire à double hétérojonction. b. Elle comprend une première hététojonction entre un premier matériau semi-conducteur ayant une première énergie de bande interdite et un second matériau semi-conducteur ayant une seconde énergie de bande interdite plus faible que ladite première énergie, et elle est caractérisée en ce qu'elle comprend une seconde hétérojonction entre ledit second matériau semi-conducteur et un troisième matériau semi-conducteur ayant une troisième énergie de bande interdite plus faible que ladite seconde énergie et en ce que ledit troisième matériau a une dimension de maille cristallographique très voisine de celle du second matériau et peut former sur ce dernier un dépôt épitaxial. c. Exploitation de l'énergie solaire.
FR7728984A 1977-09-27 1977-09-27 Cellules solaires a double heterojonction et dispositif de montage Granted FR2404307A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7728984A FR2404307A1 (fr) 1977-09-27 1977-09-27 Cellules solaires a double heterojonction et dispositif de montage
US05/946,084 US4191593A (en) 1977-09-27 1978-09-26 Double heterojunction solar cells
GB7838245A GB2005471B (en) 1977-09-27 1978-09-26 Photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7728984A FR2404307A1 (fr) 1977-09-27 1977-09-27 Cellules solaires a double heterojonction et dispositif de montage

Publications (2)

Publication Number Publication Date
FR2404307A1 true FR2404307A1 (fr) 1979-04-20
FR2404307B1 FR2404307B1 (fr) 1982-06-04

Family

ID=9195799

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7728984A Granted FR2404307A1 (fr) 1977-09-27 1977-09-27 Cellules solaires a double heterojonction et dispositif de montage

Country Status (3)

Country Link
US (1) US4191593A (fr)
FR (1) FR2404307A1 (fr)
GB (1) GB2005471B (fr)

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US4385198A (en) * 1981-07-08 1983-05-24 The United States Of America As Represented By The Secretary Of The Air Force Gallium arsenide-germanium heteroface junction device
US4492811A (en) * 1983-08-01 1985-01-08 Union Oil Company Of California Heterojunction photovoltaic device
US4644638A (en) * 1983-08-01 1987-02-24 Union Oil Company Of California Photovoltaic device prepared by electroless deposition
US4608750A (en) * 1983-08-01 1986-09-02 Union Oil Company Of California Preparation of photovoltaic device by electrochemical deposition
JPS60191548A (ja) * 1984-03-12 1985-09-30 Hitachi Ltd イメ−ジセンサ
JPS6161125A (ja) * 1984-08-31 1986-03-28 Takashi Mori 太陽エネルギ−収集装置
JPS6218076A (ja) * 1985-07-16 1987-01-27 Mitsubishi Electric Corp 半導体発光装置
US5096505A (en) * 1990-05-21 1992-03-17 The Boeing Company Panel for solar concentrators and tandem cell units
US5118361A (en) * 1990-05-21 1992-06-02 The Boeing Company Terrestrial concentrator solar cell module
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5482568A (en) * 1994-06-28 1996-01-09 Hockaday; Robert G. Micro mirror photovoltaic cells
US5959787A (en) * 1995-06-06 1999-09-28 The Boeing Company Concentrating coverglass for photovoltaic cells
US6348684B1 (en) * 1999-03-25 2002-02-19 Lucent Technologies Inc. Receiving system for free-space optical communications
US6586669B2 (en) * 2001-06-06 2003-07-01 The Boeing Company Lattice-matched semiconductor materials for use in electronic or optoelectronic devices
US20050151131A1 (en) * 2002-06-11 2005-07-14 Wager John F.Iii Polycrystalline thin-film solar cells
DE102005035672B4 (de) * 2005-07-29 2010-02-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzellenmodul für konzentrierende Solarsysteme mit einer Vielzahl von Solarzellen auf einem flächig mit einer Metallschicht beschichteten Substrat und Verfahren zu seiner Herstellung
JP2009543362A (ja) * 2006-07-05 2009-12-03 ステラリス・コーポレーション 光起電素子を形成するための装置および方法
EP2194584A1 (fr) * 2007-09-26 2010-06-09 Sharp Kabushiki Kaisha Cellule solaire, module photovoltaïque à concentration, unité photovoltaïque à concentration et procédé de fabrication de cellule solaire
US8093492B2 (en) * 2008-02-11 2012-01-10 Emcore Solar Power, Inc. Solar cell receiver for concentrated photovoltaic system for III-V semiconductor solar cell
US9331228B2 (en) * 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
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Also Published As

Publication number Publication date
GB2005471B (en) 1982-04-15
FR2404307B1 (fr) 1982-06-04
US4191593A (en) 1980-03-04
GB2005471A (en) 1979-04-19

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