CA1262068A - Photoreceptor for electrophotography - Google Patents
Photoreceptor for electrophotographyInfo
- Publication number
- CA1262068A CA1262068A CA000461106A CA461106A CA1262068A CA 1262068 A CA1262068 A CA 1262068A CA 000461106 A CA000461106 A CA 000461106A CA 461106 A CA461106 A CA 461106A CA 1262068 A CA1262068 A CA 1262068A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- photoconductive layer
- amorphous silicon
- photoreceptor
- gradually
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
- G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58150882A JPS6041046A (ja) | 1983-08-16 | 1983-08-16 | 電子写真用感光体 |
| JP150882/1983 | 1983-08-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1262068A true CA1262068A (en) | 1989-10-03 |
Family
ID=15506440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000461106A Expired CA1262068A (en) | 1983-08-16 | 1984-08-15 | Photoreceptor for electrophotography |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4804608A (OSRAM) |
| EP (1) | EP0139961B1 (OSRAM) |
| JP (1) | JPS6041046A (OSRAM) |
| CA (1) | CA1262068A (OSRAM) |
| DE (1) | DE3476473D1 (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61221752A (ja) * | 1985-03-12 | 1986-10-02 | Sharp Corp | 電子写真感光体 |
| EP0194329B1 (en) * | 1985-03-13 | 1989-07-12 | Kanegafuchi Chemical Industry Co., Ltd. | Multilayer photoconductive material |
| JP2962851B2 (ja) * | 1990-04-26 | 1999-10-12 | キヤノン株式会社 | 光受容部材 |
| JPH1081973A (ja) * | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマcvd装置 |
| US20100059110A1 (en) * | 2008-09-11 | 2010-03-11 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
| US20130341623A1 (en) | 2012-06-20 | 2013-12-26 | International Business Machines Corporation | Photoreceptor with improved blocking layer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
| US4210710A (en) * | 1978-06-26 | 1980-07-01 | A. B. Dick Company | Photoconductor of varying light sensitivity from center to edges |
| US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
| JPS57115554A (en) * | 1981-01-08 | 1982-07-19 | Canon Inc | Photoconductive material |
| GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
| JPS57119359A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| JPS57119357A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
| US4490453A (en) * | 1981-01-16 | 1984-12-25 | Canon Kabushiki Kaisha | Photoconductive member of a-silicon with nitrogen |
| US4539283A (en) * | 1981-01-16 | 1985-09-03 | Canon Kabushiki Kaisha | Amorphous silicon photoconductive member |
| US4460669A (en) * | 1981-11-26 | 1984-07-17 | Canon Kabushiki Kaisha | Photoconductive member with α-Si and C, U or D and dopant |
-
1983
- 1983-08-16 JP JP58150882A patent/JPS6041046A/ja active Granted
-
1984
- 1984-08-15 CA CA000461106A patent/CA1262068A/en not_active Expired
- 1984-08-16 EP EP84109774A patent/EP0139961B1/en not_active Expired
- 1984-08-16 DE DE8484109774T patent/DE3476473D1/de not_active Expired
-
1987
- 1987-11-22 US US07/129,346 patent/US4804608A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6041046A (ja) | 1985-03-04 |
| US4804608A (en) | 1989-02-14 |
| DE3476473D1 (en) | 1989-03-02 |
| JPH0426106B2 (OSRAM) | 1992-05-06 |
| EP0139961A1 (en) | 1985-05-08 |
| EP0139961B1 (en) | 1989-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4409311A (en) | Photosensitive member | |
| CA1262068A (en) | Photoreceptor for electrophotography | |
| US4794064A (en) | Amorphous silicon electrophotographic receptor having controlled carbon and boron contents | |
| JP3368109B2 (ja) | 電子写真用光受容部材 | |
| US4587190A (en) | Photoconductive member comprising amorphous silicon-germanium and nitrogen | |
| JPS60130747A (ja) | 光導電部材 | |
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| US4810605A (en) | Electrophotographic superlattice photoreceptor | |
| CA1251694A (en) | Method for the manufacture of photoconductive insulating elements with a broad dynamic exposure range | |
| US4636450A (en) | Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions | |
| US4762761A (en) | Electrophotographic photosensitive member and the method of manufacturing the same comprises micro-crystalline silicon | |
| US4803141A (en) | Electrophotographic superlattice photoreceptor | |
| US4704343A (en) | Electrophotographic photosensitive member containing amorphous silicon and doped microcrystalline silicon layers | |
| JPS6343157A (ja) | 電子写真感光体 | |
| 丸川雄二 et al. | Amorphous Si/SiC double-layered photoreceptor for electrophotography. | |
| US4851312A (en) | Electrophotographic photoreceptor | |
| JPH0789232B2 (ja) | 電子写真感光体 | |
| JPS6266260A (ja) | 光導電体 | |
| JPS6410064B2 (OSRAM) | ||
| JP2000171995A (ja) | 電子写真用光受容部材 | |
| EP0165743A2 (en) | Light-receiving member | |
| JPS6335979B2 (OSRAM) | ||
| JPS63135954A (ja) | 電子写真感光体 | |
| JPS61282849A (ja) | 光導電体 | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |