CA1232372A - Method for encapsulating semiconductor components mounted on a carrier tape - Google Patents

Method for encapsulating semiconductor components mounted on a carrier tape

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Publication number
CA1232372A
CA1232372A CA000490925A CA490925A CA1232372A CA 1232372 A CA1232372 A CA 1232372A CA 000490925 A CA000490925 A CA 000490925A CA 490925 A CA490925 A CA 490925A CA 1232372 A CA1232372 A CA 1232372A
Authority
CA
Canada
Prior art keywords
cup
component
shaped structure
layer
molding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000490925A
Other languages
French (fr)
Inventor
Seppo Pienimaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lohja Oy AB
Original Assignee
Lohja Oy AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lohja Oy AB filed Critical Lohja Oy AB
Application granted granted Critical
Publication of CA1232372A publication Critical patent/CA1232372A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Abstract

ABSTRACT OF THE DISCLOSURE

Described herein is a method for-encapsulating components (1) on a carrier tape (2), particulary semiconductor compo-nents, with a polymer (15, 15') or similar material, which components are supported by their lead electrodes under a hole (20) on the carrier tape. According to the invention, a film material (8) coated with a cement layer is formed into a cup-shaped structure so that the cement layer is located on the inner side of the structure (9, 10). The bottom (10) of the cup-shaped structure (9, 10) is covered with a molding layer (15), preferably a polymer layer, and the cup-shaped struc-ture is placed in the hole so that its rims (9) extend over the edges of the hole and the component (1) is brought into contact with the molding layer (15). In the next phase, the other side of the component (1) is covered with a protective layer (15'), preferably a polymer layer, which extends over the edges of the component (1), contacting the molding layer (15), and, furthermore, the cup-shaped structure (9, 10) is bonded at its rims to the carrier tape by pressing and heating. Finally, the molding layer (15) and the protective layer (15') are subjected to heat treatment so that they en-close the component (1) during a curing cycle. The cup-shaped structure (9, 10) prevents the protective polymer from spreading outside the desired area and gives the encap-sulation a clearly defined shape.
(Figure 13)

Description

~3~

Method for encapsulating semioonductor components mounted on a carrier tape The present invention concerns a method for encapsulating semiconductor components on a carrier tape in accordance with the preamble of claim 1.

Unpro-tected components are subject to environmental expo-sure and ~echanical damage during the handling phases of the components, or products incorporating these components.
Consequently,the components on the carrier tape must be encapsulated so that the tape and the components on it beha-ve in automated production machines in the same way as unen-capsulated components.

In prior art methods for the protection of carrier tape com-ponents, only the surface of the semiconductor component is protected (cf. publication GB A 2,009 504), or only the com-ponent and the leads extending therefrom are protected.Hence, the components are difficult to handle in automatic encapsulatin~ machines. In the FI Published Application 840981, a method is disclosed in which the encapsulating po-lymer is limited to a desired area of the carrier tape. In the IMC-1984 Conference publication "Chip-size Plastic En-capsulation on Tape Carrier Package", different encapsulat ing methods are presented in which an encapsulating polymer is applied on semiconductor components, or semiconductor compo nents and their leads.

~3~;~72 Moreover, in the publication GB A 2,072,424 a method is pre-( sented in which a formed metal cup is used for encapsulating a semiconductor component. The metal cup is fastened from its rims under the leads by meanq of a polyimide film coated with epoxy inI~B st-ate or some other suitable cement layer.
Subsequently the component is covered with a metal film ha-ving a hole through which the space around the component is filled with encapsulating material. The filling of a metal cup placed under the semiconductor element with encapsula~
ting polymer is presented as an alternative method In accordance with this invention, a cup formed of a cement layer coated film material, e.g., polyimide, is placed under the annular lead support defining the hole on the carrier tape where the component is to be located. This method gives the encapsulated component an accurately defined form. The polyi~ide film used as cup material, as well as the cement layer coating thereon, efficiently protect the leads and the component. The component is easy to handle, as situated in the plane of the annular support, when using automatic machinery.

By this method, the component is protected from all directi-ons with a thin encapsulating material layer. No tensions due to differences in the heat expansion coefficients of the component and the encapsulating material occur, which are typical if only one side of an element is protected, and tend to damage the element.

The carrier tape components encapsulated from all directions in accordance with the present invention are suitable for use asdiscrete components. Differing from known methods, a film material, preferably polyimide, coated with a cement layer being activated when heated, as well as a carrier film provided ~ith annular lead supports, is used. The cup formed of the moldable film material is cemented onto the leads si-3 ~3;~:3~

tuated under the annular lead support. The encapsulating material is limited to the area defined by the inner rims of the annular support, whereby the cup, the annular support, and the encapsulating polymer together form a micro-capsule around the semiconductor component.

More specifically, the method according to the invention consists of a method for encapsulating components which are mounted by their leads on a carrier tape, wherein each component is supported under a hole in the tape with its leads engaging an annular support portion of the tape, characterized by the s-teps of~ providing a cup-shaped structure formed of a film material which is coated with a cement layer, wherein a polymer molding layer is placed on the cement layer within the cup-shaped structure; placing the cup-shaped structure under a said hole in the carrier tape, wherein rim portions o~ the cup~shaped structure engage the underside of the annular support portion of the carrier tape, and wherein the molding layer in the cup-shaped structure engages a said component to be encapsulated; bonding the rim portions of the cup-shaped structure to the annular support portion of the carrier tape by using heating and pressing means; covering the upper portion and sides of the component within the cup-shaped structure with a protective layer of a polymer encapsulating material, wherein -the encapsulating material is dispensed from an applicator and wherein said covering step is eEfected by conveying the applicator along a path to cause the encapsulating material to extend over the upper :Eace of the component, and to extend over the side edges of the component into contact with the molding layer;
and subjecting the molding layer and the encapsulating material to a heat curing treatment, wherein the entire component is completely encapsulated by the molding layer and the encapsulating material.

3a ~ 2 ~ ~ 3 ~ 2 Componen-ts protected by means of the method in accordance with the invention can be advantageously used in component bonding and placement machines. In -the placement phase, the components with bent leads are bonded on a substrate and the leads are soldered to the bonding pads on the substrate.

The invention will be examined in the following in more detail by means of the exemplifying embodiments in accordance with the attached drawings.

Figure 1 shows a sectional view and Figure 2 a top view of a TAB (Tape Automatic Bonding) component on the carrier tape.

Figure 3 shows in schematic form the production of the cup in accordance with the method of the invention.

Figure 4 shows a sectional view and Figure 5 a top view of one protective cup.

Figure 6 shows in schematic form the dispensing of the polymer on the bottom of the cup.

3;2~2 Figure 7 shows in sectional view thè bonding of a cup to the carrier tape.

Figure 8 shows in sectional view and Figure 9 in top view the dispensing and application of the polymer on the component.

Figure 10 shows in schematic form the~simultaneously performed bonding, protection, and pre-curing phases.

Figure 11 shows in a sectional view and Figure 12 in a top view a component with completed protection.

Figure 13 shows a sectional view of a component with completed protection, detached from the carrier tape.

A chip TAB component 1 is supported as shown in Figure 1 by its lead electrodes 7 under a square hole 20 in a polyimide tape 2 so that an annular area 4 remains between the hole and the component 1. This area 4 is surrounded as a part of the tape 2 by an annular support 5, which additionally is surrounded by four elongated gaps 3. The leads 7 attach the component 1 (by crossing the space 4 and the gaps 3) to test pad areas 6, outside the gaps.
The construction described above is the initial phase for the five-phase protection method described below.

A polyimide film 8 (thickness about 50 ~m), covered by a pre-cured cement layer 21, is pressed with die tools 12, 13 with holding means 22 and cutting means 23 to form a cup 9, 10, 11 with gently sloping sides 11. The cup 9, 10, 11 is cut from the film 8 so that it is provided with a rim 9 of the desired width (Figure 4). The cup depth is dimensioned so that a space of 100...200 ~m remains between the semiconductor component chip 1 bottom side and the cup bottom 10. The rim 9 of the cup 9, 10, 11 is dimensioned according to the dimensions of the annular ~3~31~

support 5. The outer dimensions of the rim in the cup i 9, 10, 11 are 100... 200 ~m smaller than the outer dimensions of the annular support 5. This~ and the exact alignment of the cup 9, 10, 11 during the bonding phase, ensures that the leads 7 on the ILB bonding area will not be cut against the rim of the cup 9, 10, 11 during the bending phase.

The formed cup 9, 10, 11 is filled with polymer 15 on its bottom 10 (Figure 6). This ensures the formation of a voidless protective polymer layer under the component 1.
The polymer 15 is dispensed only by such an amount that it fills the space between the component 1 and the cup 9, 10, 11 but does not lift the component 1 upwards.

The cup 9, 10, 11 is bonded by the pre-cured cement layer21 on the cup film material 8 under the component 1 (Figure 7,.
The pre-cured cement requires heat treatment (temperature l00...20ooc) to make a bond to the carrier film 2.

The cup 9, 10, 11 is inserted in the press die 17 which i~ formed so that it aligns the cup 9, 10, 11. The die 17 is heated and it compresses the cup 9, 10, 11 to the carrier tape. The joint 5 is cooled before the compression is released to ensure the permanent bonding of the cup 9, 10, 11. During the bonding phase, the ce~ent must fill the space between the leads 7 and form an insulating polymer layer between the leads 7. This ~ets a thickness requirement of 25...35 ~m for the cement layer.

The component 1 is covered with the protective polymer ~D ~,37~3~7~

15' (Figure 8). The applicatorl~ is conveyed over the component 1 in a spiral route so that its path totally covers the entire coated area (Figure 9). Applicator l~ and its tip movement are designed so that the polymer 15' is evenly spread over the entire tip path. The quantity o~ polymer 15' is metered to fill the space between the component 1 edge and the rim 9 of the cup 9, 10, 11, and to lift the sur~ace of the component 1 slightly above the surface of the carrier ~ilm 2. The viscosities of the applied protective polymers are within 5,000...40,000 cPs. The choice of the protective polymer is determined by its protective properties, cure time and temperature, and wetting characteristics.

The wetting characteristics of the protective polymer 15' can be improved by heating the cup 9, 10, 11 because the protective polymer viscosity decreases with increasing temperature. In this case phases 3 and 4 are performed simultaneously (Figure 10). The pre-curing o~ the protective polymer can also be arranged at this phase when the protected component is clamped and the pressing die temperature ar4d appllcation time is adjusted for the polymer.
The pressing die 17 is provided with cooling channels 18, which allow the temperature of the pressing die 17 to decrease, and a release channel 19 to detach the encapsula-ted component 1 from the pressing die 17. When the application of the protective polymer 15' is done in vacuuml this, together with the heating, accelerates the removal of developing gases and voids in the encapsulation.
3o The carrier tape 2 with the encapsulated components 1 is routed via a pre-curing oven (not shown). The protective polymer 15 is precured and the carrier film 2 is wound with a spacer tape on a reel. Therea~ter, the reel is transferred to the final curing o~ the protective polymer.

~23~3~

The encapsulated component can now be cut off from the carrier tape 2, e.g., at the outer rims of gaps 3, and the leads 7 with which the component 1 is soldered on the printed circuit board are bent (Figure 13). The components can be placed and glued at their bottom on the PCB, and all components can then be soldered either simultaneously or individually.

The applied encapsulation polymers 15 and 15' can be of an epoxy, silicone, or phenol type resin (e.g., CASTAL
341 FR or SUMITOMO CR 2000). A principal requirement is that the resin mold leaves no voids between the component 1 and the cup 9, 10, 11.

The fil~ material 8 for the cups 9, 10, 11 can also be a polyester film, instead of the polyimide film (e.g., NITTO JR 2250). Also other moldable films are applicable.

The cement layer covering the cup film material 8 surface can be of any conventional silicone, acryl,or epoxy based adhesive. The adhesive layer will not adhere when cold, and it is easily formed.

The carrier tape 2 can be, e.g., a polyester film, instead f the polyimide film. In this case, it is preferable that the cup film material 8 is also a polyester film.

Claims (6)

Claims:
1. A method for encapsulating components which are mounted by their leads on a carrier tape, wherein each component is supported under a hole in the tape with its leads engaging an annular support portion of the tape, characterized by the steps of:
providing a cup-shaped structure formed of a film material which is coated with a cement layer, wherein a polymer molding layer is placed on the cement layer within the cup-shaped structure;
placing the cup-shaped structure under a said hole in the carrier tape, wherein rim portions of the cup-shaped structure engage the underside of the annular support portion of the carrier tape, and wherein the molding layer in the cup-shaped structure engages a said component to be encapsulated;
bonding the rim portions of the cup-shaped structure to the annular support portion of the carrier tape by using heating and pressing means;
covering the upper portion and sides of the component within the cup-shaped structure with a protective layer of a polymer encapsulating material, wherein the encapsulating material is dispensed from an applicator and wherein said covering step is effected by conveying the applicator along a path to cause the encapsulating material to extend over the upper face of the component, and to extend over the side edges of the component into contact with the molding layer; and subjecting the molding layer and the encapsulating material to a heat curing treatment, wherein the entire component is completely encapsulated by the molding layer and the encapsulating material.
2. A method as set forth in claim 1, wherein said steps are performed by using different polymers for said molding layer material and said encapsulating material.
3. A method as claimed in claim 1, characterized in that the application of the molding layer, the bonding of the cup shaped structure and the application of the encapsulating material are done in separate steps.
4. A method as claimed in claim 1, characterized in that the bonding step is performed using a heated pressing device.
5. A method as set forth in claim 1, wherein said steps are performed by using the same material for said molding layer as is used for said encapsulating material.
6. A method as claimed in claim 5, characterized in that the application of the molding layer, the bonding of the cup-shaped structure and the application of the encapsulating material are done in a single step.
CA000490925A 1984-09-17 1985-09-17 Method for encapsulating semiconductor components mounted on a carrier tape Expired CA1232372A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI843631 1984-09-17
FI843631A FI76220C (en) 1984-09-17 1984-09-17 FOERFARANDE FOER INKAPSLING AV PAO ETT BAERARBAND ANORDNADE HALVLEDARKOMPONENTER.

Publications (1)

Publication Number Publication Date
CA1232372A true CA1232372A (en) 1988-02-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
CA000490925A Expired CA1232372A (en) 1984-09-17 1985-09-17 Method for encapsulating semiconductor components mounted on a carrier tape

Country Status (8)

Country Link
BE (1) BE903242A (en)
CA (1) CA1232372A (en)
CH (1) CH669477A5 (en)
DE (1) DE3533159A1 (en)
FI (1) FI76220C (en)
FR (1) FR2570544B1 (en)
GB (1) GB2164794B (en)
SE (1) SE8504295L (en)

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US4300153A (en) * 1977-09-22 1981-11-10 Sharp Kabushiki Kaisha Flat shaped semiconductor encapsulation
US4330790A (en) * 1980-03-24 1982-05-18 National Semiconductor Corporation Tape operated semiconductor device packaging
FR2520541A1 (en) * 1982-01-22 1983-07-29 Flonic Sa Mounting assembly for memory integrated circuit in bank card - comprises flexible film support carrying metallic connecting pads for chip connections
FI72409C (en) * 1984-03-09 1987-05-11 Lohja Ab Oy FOERFARANDE FOER INKAPSLING AV PAO EN BAERREMSA ANORDNADE HALVLEDARKOMPONENTER.

Also Published As

Publication number Publication date
SE8504295D0 (en) 1985-09-16
FR2570544B1 (en) 1990-01-05
SE8504295L (en) 1986-03-18
FI76220C (en) 1988-09-09
CH669477A5 (en) 1989-03-15
GB2164794A (en) 1986-03-26
FI76220B (en) 1988-05-31
FR2570544A1 (en) 1986-03-21
DE3533159A1 (en) 1986-03-27
FI843631L (en) 1986-03-18
GB2164794B (en) 1988-03-23
GB8522166D0 (en) 1985-10-09
FI843631A0 (en) 1984-09-17
BE903242A (en) 1986-01-16

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