JP2000307033A - Semiconductor device and ic card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and IC card of low-cost and precision dimension. SOLUTION: A substrate 12, a semiconductor element 14 mounted on it, a sealing resin 16 which covers the semiconductor element 14, and a sheet 18 placed on the sealing resin 16 to almost flatten the central top part of the sealing resin 16, are provided. Here, the substrate 12 comprises a side wall 20 standing to face the semiconductor element for limiting spread of the sealing resin 16.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and an IC.
About the card.

[0002]

2. Description of the Related Art An IC card comprises a card base on which a semiconductor device is mounted. The card base has a storage recess for storing the semiconductor device. The semiconductor device includes a substrate,
It is configured as an IC module comprising a semiconductor chip mounted on a substrate and a sealing resin covering the semiconductor chip.
This semiconductor device is arranged in a storage recess of the card base,
Adhered to the wall of the storage recess.

A semiconductor device has a T-shaped cross section.
The portion of the sealing resin corresponds to the vertical side of the T-shape, and the portion of the substrate corresponds to the horizontal side of the T-shape. The semiconductor device is inserted into the storage recess of the card base with the sealing resin portion facing inward.
The sealing resin and the portion on the inner surface side of the substrate fit exactly into the storage recess of the card base, and the outer surface of the substrate is flush with the surface of the card base. The outer surface of the substrate is a conductor surface.

[0004] A semiconductor device for an IC card is relatively small and must be formed so as to fit snugly into a storage recess of a card base as described above. In particular, the top surface and the peripheral contour of the sealing resin must be formed so as to conform to the wall surface of the storage recess. Therefore, when the semiconductor chip is sealed with the resin, care must be taken so that the final shape of the sealing resin can be obtained with high dimensional accuracy.

Japanese Unexamined Patent Publication No. Hei 10-250276 discloses that in order to obtain a thin semiconductor device, a frame-shaped spacer is disposed on a substrate, and a soft sealing resin before curing is applied to the frame-shaped spacer on the substrate. Place it inside, place the sheet on the sealing resin, press the sealing resin with a plate from above the sheet, flatten the top of the resin while extruding the peripheral part of the sealing resin toward the frame-shaped spacer A method for doing so is disclosed.

Further, instead of the frame-shaped spacer, a metal dam frame is attached to the substrate, and a soft sealing resin before curing is arranged inside the dam frame on the substrate, and the sealing resin is removed from above. There is known a method of flattening the top of the resin while pressing the peripheral portion of the sealing resin toward the dam frame by pressing. In general, a label is stamped on a semiconductor product to identify the product. However, when imprinting on a small device such as a semiconductor device for an IC card, it is usually imprinted on a cured sealing resin.

[0007]

In the method of manufacturing a semiconductor device described in the above-mentioned publication, the sealing resin is pressed by using a frame-shaped spacer, a sheet and a plate, and the height of the sealing resin and its surroundings are reduced. The shape is adjusted. After the pressing of the sealing resin is completed, the plate is lifted from the sealing resin, and the frame-shaped spacer is removed from the sealing resin.

[0008] However, the soft sealing resin before being cured contacts the frame-shaped spacer at the time of pressing and is in a bonded state.
Therefore, even if the frame-shaped spacer is to be removed from the sealing resin after the sealing resin is pressed, the frame-shaped spacer cannot be removed from the sealing resin. Alternatively, a part of the sealing resin adheres to the frame-shaped spacer and is pulled, so that the shape of the sealing resin whose angle has been adjusted is broken. Further, this publication describes that after the sealing resin is pressed, the sheet is peeled off from the sealing resin, and the sealing resin is cured by heating. However, in practice, the sheet cannot be peeled from the sealing resin. When the sheet is forcibly peeled off from the sealing resin, a part of the sealing resin adheres to the sheet and is pulled, so that the shape of the sealing resin whose angle has been adjusted is broken.

Also, in the case where a metal dam frame is attached to the substrate instead of the frame-shaped spacer and the sealing resin is formed using the dam frame, it is necessary to remove the dam frame from the sealing resin. There is no such problem. However, the dam frame is an expensive component, and using the dam frame increases the cost of the semiconductor device. Further, the surface of the cured sealing resin has irregularities, and when a display is imprinted on the surface of the sealing resin, it is difficult to read due to cut or blurred characters. Further, there is no area where the display can be stamped on a portion other than the sealing resin.

An object of the present invention is to provide a semiconductor device and an IC card which are inexpensive and have high dimensional accuracy. Another object of the present invention is to provide a semiconductor device and an IC card having a sheet suitable for imprinting a display.

[0011]

A semiconductor device according to the present invention comprises a substrate, a semiconductor element mounted on the substrate, a sealing resin covering the semiconductor element, and a substantially top central portion of the sealing resin. A sheet placed on the sealing resin in order to make the substrate include an insulating layer and a conductor layer laminated on the insulating layer, and the semiconductor element is mounted on the insulating layer. The insulating layer has a slit, and the side wall of the slit stands facing the semiconductor element.

Further, an IC card according to the present invention comprises a card base and a semiconductor device having the above-described characteristics. In this configuration, when the semiconductor element is sealed with the sealing resin, the sealing resin is pressed from above the sheet by a pressing jig such as a plate, and the height of the sealing resin is adjusted.
The peripheral shape of the sealing resin can be adjusted by the side wall provided on the peripheral portion of the substrate. After pressing the sealing resin, it is only necessary to remove the pressing jig, and the pressing jig is easily removed from the sheet. The sheet and side walls remain attached to the sealing resin and become part of the product. Thus, according to the present invention, it is possible to obtain a semiconductor device that is inexpensive and has high dimensional accuracy and an IC card on which such a semiconductor device is mounted.

[0013] Preferably, the slit is provided in the insulating layer in a discontinuous annular shape around the semiconductor element. The insulating layer has a plurality of holes between the semiconductor element and the slit, and a plurality of wires connect the semiconductor element and the conductor layer through the plurality of holes. Preferably, the sheet includes an indicia. That is, an indication for identifying the semiconductor product is stamped on the sheet. Therefore, even with a small semiconductor device, an easy-to-read display with no cut or blurred characters can be obtained.

[0014] Preferably, the sheet is flat. Alternatively, the sheet includes a loosely tapered section. For example, the sheet is formed to have a conical depression.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an IC according to an embodiment of the present invention.
FIG. 3 is a plan view showing a card 50. FIG. 2 shows an IC card 50.
FIG. The IC card 50 includes the card base 5
2 and the semiconductor device 10 attached to the card base 52
Consists of The semiconductor device 10 has a substantially T-shaped cross-sectional shape, and the card base 52 also has a storage recess 54 having a substantially T-shaped cross-sectional shape. The storage recess 54 is provided in the central bottom wall portion 5.
4a and a peripheral bottom wall portion 54b. Semiconductor device 1
0 is inserted into the storage recess 54 of the card base 52 with the T-shaped vertical side facing inward. The semiconductor device 10 fits into the storage recess 54 of the card base 52, and the outer surface of the T-shaped horizontal side is flush with the surface of the card base 52.

FIG. 3 shows a semiconductor device 1 according to an embodiment of the present invention.
FIG. FIG. 4 is a perspective view showing the semiconductor device 10. The semiconductor device 10 includes a substrate 12 and a substrate 12.
Element (semiconductor chip in this case) mounted on the semiconductor device 14
And a sealing resin 16 covering the semiconductor element 14 and a sealing resin 1
The sealing resin 16 is used to make the central top portion 6 substantially flat.
And a sheet 18 placed on the sheet. Sheet 1
Numeral 8 is adhered to the central top portion of the sealing resin 16. The substrate 12 has a side wall 20 that faces the semiconductor element in order to limit the spread of the sealing resin 16.

More specifically, the substrate 12 includes a base tape layer (insulating layer) 12a and a conductor layer 12b laminated on the base tape layer 12a. The base tape layer 12a is made of, for example, a polyimide film, the conductor layer 12b is made of a copper thin film, and the conductor layer 12b is adhered to the base tape layer 12a. The semiconductor element 14 is the base tape layer 12
a, for example, bonded with a thermosetting resin.

FIG. 5 is a plan view showing the base tape layer 12a of the substrate 12. FIG. FIG. 6 is a plan view showing the conductor layer 12b of the substrate 12. 5 and 6, the base tape layer 12a and the conductor layer 12b of the substrate 12 are shown as part of a continuous TAB tape 12t having sprocket holes 12c. Substrate 1 of individual semiconductor device 10
In order to form No. 2, the TAB tape 12t is cut along the outline of the conductor layer 12b shown in FIGS.

The base tape layer 12a includes a mounting region 12d for the semiconductor element 14 located at the center and the base tape layer 1a.
An annular slit 12e provided between the mounting area 12d of the base tape layer 12a and the outer peripheral edge of the base tape layer 12a, and a plurality of holes 1 provided between the mounting area 12d and the slit 12e.
2f. The slit 12 e is provided in a discontinuous annular shape around the mounting region 12 d of the semiconductor element 14.
FIG. 3 shows a cross section of the substrate 12 passing through the slit 12e and the hole 12f.

The side wall 20 of the substrate 12 comprises the side wall 20 of the slit 12e. The side wall 20 extends substantially annularly around the mounting region 12d of the semiconductor element 14 of the substrate 12 together with the slit 12e. The side wall 20 of the base tape layer 12a
In the manufacturing process of the substrate 12, slits 12e are opened at predetermined positions of the base tape layer 12a by die processing, and the base tape layer 12a and the conductive layer 12 formed by plating are formed.
It can be easily manufactured by bonding b.

The conductor layer 12b has a conductor portion 12h separated by an insulating portion or a slit indicated by a line 12g.
Having. The plurality of holes 12f of the base tape layer 12a are located at positions respectively overlapping the plurality of conductor portions 12h of the conductor layer 12b. As shown in FIG. 3, the bonding wire 22 electrically connects the electrode pad of the semiconductor element 14 and the conductor portion 12h of the conductor layer 12b through the hole 12f of the base tape layer 12a. The insulating portion or slit 12g of the conductor layer 12b is formed to be considerably narrow,
The plurality of conductor portions 12h almost entirely cover the lower surface of the base tape layer 12a.

The sealing resin 16 is made of a thermosetting resin,
The semiconductor element 14 and the bonding wires 22 are protected. The central portion of the sealing resin 16 is high, the peripheral portion is gradually tapered, and the bottom of the tapered peripheral portion is blocked by the side wall 20 of the substrate 12. In the embodiment, the width of the slit 12e is 500 μm, and the thickness of the base tape layer 12a (the height of the side wall 20) is 75 μm. The sheet 18 is a polyimide film having a thickness of 25 μm.

The semiconductor device 10 is mounted on the card base 52 of the IC card 50 with the conductor layer 12b of the substrate 12 facing outward.
Is inserted into the storage recess 54. Since the sheet 18 attached to the central top portion of the sealing resin 16 is flat and has a predetermined area, the seat 18 fits exactly on the central bottom wall portion 54a of the storage recess 54. Further, the semiconductor device 1
The portion of the base substrate 12 outside the side wall 20 of the base tape layer 12a is flat and fits perfectly on the peripheral bottom wall portion 54b of the storage recess 54 of the card base 52 of the IC card 50. Therefore, the conductor layer 12 b of the substrate 12 of the semiconductor device 10 faces outward and is flush with the surface of the card base 52.

Further, the sheet 18 includes a display 24. That is, the display 24 for identifying the semiconductor product is stamped on the sheet 18. Therefore, the small semiconductor device 10
However, it is possible to obtain an easy-to-read display 24 with no cut or blurred characters. 7 to 9 are views for explaining a method of manufacturing the semiconductor device 10 described above. FIG. 10 is an enlarged view of a part of the semiconductor device of FIG. FIG. 11 is an enlarged view of a part of the semiconductor device of FIG.

Referring to FIG. 7 and FIG.
Is mounted on the substrate 12, and the semiconductor element 14 and the conductor layer 12 b of the substrate 12 are electrically connected by the bonding wires 22, and then the sealing resin 16 is applied so as to cover the semiconductor element 14 and the bonding wires 22. The sealing resin 16 is in an uncured state, and the central portion above the semiconductor element 14 is high.
Apply in a mountain shape. The peripheral portion of the sealing resin 16 does not reach the slit 12 e or the side wall 20.

Then, the spacer 60 is placed on the outer peripheral portion of the substrate 12. Alternatively, the spacer 60 is placed on a support (not shown) on which the substrate 12 is placed. The sealing resin 16 is applied so that the central top portion of the sealing resin 16 is higher than the spacer 60. The height of the spacer 60 is set to the height of the sealing resin 16 in the final form. In FIG.
The sheet 18 is placed on the central top portion of the sealing resin 16, and the sealing resin 16 is pressed in the direction of arrow A from above the sheet 18 by a pressing jig 62 having a flat surface such as a glass plate. The pressing jig 62 descends by a certain amount until it reaches the spacer 60, and reaches the spacer 60 and stops. The pressed sealing resin 16 spreads in the lateral direction (outward direction).

The sealing resin 16 that is going to spread in the lateral direction is
It is dammed by the side wall 20 of the base tape layer 12a of the substrate 12, and the lateral spread is restricted. Similarly, when the sealing resin 16 melts and spreads from application to hardening, the lateral spread is limited by the side wall 20. As a result, the sealing resin 16 is
Glue to 0.

9 and 11, the pressing jig 62
Is lifted from the sealing resin 16 in the direction of arrow B, and the spacer 60 is removed from the substrate 12 as shown by arrow C. The sheet 18 is used between the sealing resin 16 and the pressing jig 62 so that the pressing jig 62 and the sealing resin 16 do not adhere to each other when the sealing resin 16 is pressed. After pressing, the semiconductor device 1 is bonded to the sealing resin 16.
The state remains on the 0 side.

Then, by curing the sealing resin 16, it is possible to obtain the semiconductor device 10 having the sealing resin 16 having a predetermined height and spread. Sheet 18 is sealing resin 1
6 is provided with a flat and smooth surface, which is suitable for providing the display 24. The sheet 18 on which the display 24 has been previously stamped may be used for pressing, or the display 24 may be stamped on the sheet 18 on the sealing resin 16 after the sealing resin 16 is cured. However, the sealing resin 16
When there is a step of applying heat after curing or stamping, it is necessary to use a sheet material having excellent heat resistance.

In the present invention, a predetermined amount of the sealing resin 16 is pressed before the sealing resin 16 is cured, and the side wall 20 is provided on the substrate 12 in order to stop the flow of the sealing resin 16.
Thus, it is possible to obtain the semiconductor device 10 having the sealing resin having a predetermined height and spread without using a conventional expensive dam frame. In addition, since the display 24 is stamped on the sheet 18, there is no problem that characters are cut or blurred as compared with the case of stamping characters on a resin having unevenness.

FIG. 12 shows a method of manufacturing a semiconductor device 10 according to another embodiment of the present invention. FIG. 13 is a diagram showing the semiconductor device 10 manufactured by the manufacturing method of FIG.
The semiconductor device 10 includes a substrate 12, a semiconductor element 14 mounted on the substrate 12, a sealing resin 16 covering the semiconductor element 14, and a sealing portion 16 for substantially flattening a central top portion of the sealing resin 16. And a sheet 18 placed on the resin 16. The sheet 18 is adhered to the central top portion of the sealing resin 16. The substrate 12 has a side wall 20 that faces the semiconductor element in order to limit the spread of the sealing resin 16.

In this embodiment, the center of the pressing surface of the pressing jig 62 is slightly conically curved. Therefore,
The sheet 18 pressed by the pressing jig 62 and the upper portion of the sealing resin 16 are conically recessed. That is, the sheet 18 includes a portion having a gentle taper. The taper rises upward from the center to the outside. If voids (bubbles) 64 are formed during the curing of the resin, the voids 64 rise up along the sheet 18 and fall out of the sealing resin 16, and do not remain in the sealing resin 16. Therefore, the voids (bubbles) 64 do not accumulate under the sheet 18 and do not adversely affect the reliability of the product. This shape can be easily obtained by slightly deforming the shape of the pressing jig 62.

In the above example, the sheet 18 is made of polyimide, but if the sealing resin 16 can be pressed and the display 24 can be stamped, the sheet 18 can be made of another material, for example, a PET material. You may. Further, the sheet 18 is not limited to a plastic film, and may be a woven fabric or a nonwoven fabric.
The material of the sheet 18 is not limited. Further, as shown in FIG. 14, if the sheet 18 is made of a porous sheet, the generated voids escape from the sheet 18 even if the sheet 18 does not have a tapered shape as in the previous example. A highly reliable semiconductor device 10 can be obtained.

[0034]

As described above, according to the present invention,
Since the sheet is placed on the sealing resin and the side walls are provided on the substrate to restrict the flow of the sealing resin, the sealing resin having a predetermined height and spread can be used without using a conventional expensive dam frame. Semiconductor device and an IC card including such a semiconductor device can be obtained. Further, a display can be provided on the sheet, so that a semiconductor device having a clear display can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing an IC card according to an embodiment of the present invention.

FIG. 2 is a sectional view showing an IC card.

FIG. 3 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a perspective view showing the semiconductor device of FIG. 3;

FIG. 5 is a plan view showing a base tape layer of a substrate.

FIG. 6 is a plan view showing a conductor layer of the substrate.

FIG. 7 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device.

8 is a cross-sectional view showing a step that follows the step of FIG.

9 is a cross-sectional view showing a step that follows the step of FIG.

FIG. 10 is an enlarged view of a part of the semiconductor device of FIG. 7;

FIG. 11 is an enlarged view of a part of the semiconductor device of FIG. 9;

FIG. 12 is a sectional view illustrating a method of manufacturing a semiconductor device according to another embodiment of the present invention.

FIG. 13 is a sectional view showing a semiconductor device manufactured by the manufacturing method of FIG. 12;

FIG. 14 is a cross-sectional view showing a modified example of a sheet.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 12 ... Substrate 12a ... Base tape layer 12b ... Conductive layer 12d ... Semiconductor element mounting area 12e ... Slit 14 ... Semiconductor element 16 ... Sealing resin 18 ... Sheet 20 ... Side wall 22 ... Bonding wire 24 ... Display 50 ... IC card 52: card base 54: storage recess 60: spacer 62: pressing jig

 ────────────────────────────────────────────────── ─── Continued on the front page F term (reference) 2C005 MA14 MA18 NB13 NB31 NB34 PA03 RA03 RA15 RA16 RA19 4M109 AA01 BA05 CA06 CA26 DA03 DB16 GA03 GA07 5B035 BA03 BA04 BB09 CA01

Claims (6)

[Claims] 1. A substrate, a semiconductor element mounted on the substrate, a sealing resin covering the semiconductor element, and a sealing resin on the sealing resin to make a central top portion of the sealing resin substantially flat. A mounted sheet, the substrate includes an insulating layer, and a conductor layer laminated on the insulating layer, the semiconductor element is mounted on the insulating layer, the insulating layer has a slit, A semiconductor device characterized in that a side wall of a slit stands facing a semiconductor element. 2. The semiconductor device according to claim 1, wherein said slit is provided in said insulating layer in a discontinuous annular shape around said semiconductor element. 3. The insulating layer has a plurality of holes between the semiconductor element and the slit, and a plurality of wires connect the semiconductor element and the conductor layer through the plurality of holes. The semiconductor device according to claim 2, wherein: 4. The semiconductor device according to claim 1, wherein the sheet includes a display. 5. The semiconductor device according to claim 1, wherein the sheet includes a portion having a gentle taper. 6. An IC card comprising a semiconductor device and a card base on which the semiconductor device is mounted, wherein the semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, and a seal covering the semiconductor element. A sealing resin, and a sheet placed on the sealing resin to substantially flatten a central top portion of the sealing resin, wherein the substrate is an insulating layer, and a conductor layer laminated on the insulating layer. Wherein the semiconductor element is mounted on the insulating layer, the insulating layer has a slit, and a side wall of the slit stands facing the semiconductor element.