CA1230422A - Self-timed precharge circuit - Google Patents

Self-timed precharge circuit

Info

Publication number
CA1230422A
CA1230422A CA000485180A CA485180A CA1230422A CA 1230422 A CA1230422 A CA 1230422A CA 000485180 A CA000485180 A CA 000485180A CA 485180 A CA485180 A CA 485180A CA 1230422 A CA1230422 A CA 1230422A
Authority
CA
Canada
Prior art keywords
signal
low
node
state
signal state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000485180A
Other languages
English (en)
French (fr)
Inventor
Thekkemadathil V. Rajeevakumar
Lewis M. Terman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1230422A publication Critical patent/CA1230422A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
CA000485180A 1985-01-31 1985-06-25 Self-timed precharge circuit Expired CA1230422A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US696,624 1985-01-31
US06/696,624 US4638462A (en) 1985-01-31 1985-01-31 Self-timed precharge circuit

Publications (1)

Publication Number Publication Date
CA1230422A true CA1230422A (en) 1987-12-15

Family

ID=24797871

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000485180A Expired CA1230422A (en) 1985-01-31 1985-06-25 Self-timed precharge circuit

Country Status (5)

Country Link
US (1) US4638462A (OSRAM)
EP (1) EP0190823B1 (OSRAM)
JP (1) JPS61175995A (OSRAM)
CA (1) CA1230422A (OSRAM)
DE (1) DE3681045D1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926384A (en) * 1988-01-25 1990-05-15 Visic, Incorporated Static ram with write recovery in selected portion of memory array
US4878198A (en) * 1988-01-25 1989-10-31 Visic, Incorporated Static ram with common data line equalization
US5404327A (en) * 1988-06-30 1995-04-04 Texas Instruments Incorporated Memory device with end of cycle precharge utilizing write signal and data transition detectors
US4962326B1 (en) * 1988-07-22 1993-11-16 Micron Technology, Inc. Reduced latchup in precharging i/o lines to sense amp signal levels
WO1990007777A1 (en) * 1988-12-24 1990-07-12 Alcatel N.V. Asynchronous timing circuit for a 2-coordinate memory
US5018106A (en) * 1989-04-27 1991-05-21 Vlsi Technology, Inc. Static random access memory with modulated loads
CA1298359C (en) * 1989-08-28 1992-03-31 Marc P. Roy High-speed dynamic cmos circuit
JP2646032B2 (ja) * 1989-10-14 1997-08-25 三菱電機株式会社 Ｌｉｆｏ方式の半導体記憶装置およびその制御方法
US5301165A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Chip select speedup circuit for a memory
US5432747A (en) * 1994-09-14 1995-07-11 Unisys Corporation Self-timing clock generator for precharged synchronous SRAM
US5740094A (en) * 1995-08-21 1998-04-14 International Business Machines Corporation Self-timed multiplier array
US5835410A (en) * 1997-06-09 1998-11-10 Microchip Technology Incorporated Self timed precharge sense amplifier for a memory array
US6072738A (en) * 1998-03-09 2000-06-06 Lsi Logic Corporation Cycle time reduction using an early precharge
US6072746A (en) 1998-08-14 2000-06-06 International Business Machines Corporation Self-timed address decoder for register file and compare circuit of a multi-port CAM
US6363336B1 (en) * 1999-10-13 2002-03-26 Transmeta Corporation Fine grain translation discrimination
DE10025569A1 (de) * 2000-05-24 2001-12-13 Infineon Technologies Ag Integrierter Speicher mit Zeilenzugriffssteuerung zur Aktivierung und Vorladung von Zeilenleitungen und Verfahren zum Betrieb eines solchen Speichers
DE102007005930A1 (de) 2007-02-06 2008-08-07 Efficient Energy Gmbh Wärmepuppe, Kleinkraftwerk und Verfahren zum Pumpen von Wärme
JP7086795B2 (ja) * 2018-09-03 2022-06-20 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909631A (en) * 1973-08-02 1975-09-30 Texas Instruments Inc Pre-charge voltage generating system
US3942162A (en) * 1974-07-01 1976-03-02 Motorola, Inc. Pre-conditioning circuits for MOS integrated circuits
US3942037A (en) * 1974-09-06 1976-03-02 Motorola, Inc. MOS edge sensing circuit
US4110840A (en) * 1976-12-22 1978-08-29 Motorola Inc. Sense line charging system for random access memory
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS55132595A (en) * 1979-04-04 1980-10-15 Nec Corp Semiconductor circuit
JPS56165983A (en) * 1980-05-26 1981-12-19 Toshiba Corp Semiconductor storage device
US4355377A (en) * 1980-06-30 1982-10-19 Inmos Corporation Asynchronously equillibrated and pre-charged static ram
JPS5740796A (en) * 1980-08-21 1982-03-06 Nec Corp Semiconductor circuit
US4338679A (en) * 1980-12-24 1982-07-06 Mostek Corporation Row driver circuit for semiconductor memory
JPS57195387A (en) * 1981-05-27 1982-12-01 Hitachi Ltd Data lien precharging system of memory integrated circuit
US4539661A (en) * 1982-06-30 1985-09-03 Fujitsu Limited Static-type semiconductor memory device
JPS6061986A (ja) * 1983-09-14 1985-04-09 Mitsubishi Electric Corp 半導体記憶装置
JPH0789437B2 (ja) * 1985-01-23 1995-09-27 株式会社日立製作所 半導体記憶装置
JPS61144788A (ja) * 1984-12-18 1986-07-02 Nec Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH0520840B2 (OSRAM) 1993-03-22
DE3681045D1 (de) 1991-10-02
JPS61175995A (ja) 1986-08-07
EP0190823A3 (en) 1989-10-25
EP0190823B1 (en) 1991-08-28
EP0190823A2 (en) 1986-08-13
US4638462A (en) 1987-01-20

Similar Documents

Publication Publication Date Title
CA1230422A (en) Self-timed precharge circuit
US3940747A (en) High density, high speed random access read-write memory
US3796998A (en) Mos dynamic memory
US4716551A (en) Semiconductor memory device with variable self-refresh cycle
US3588844A (en) Sense amplifier for single device per bit mosfet memories
US4581718A (en) MOS memory
US8467257B1 (en) Circuit and method for generating a sense amplifier enable signal based on a voltage level of a tracking bitline
US4542483A (en) Dual stage sense amplifier for dynamic random access memory
US3909631A (en) Pre-charge voltage generating system
KR930005639B1 (ko) 다이나믹형 반도체기억장치
US4195357A (en) Median spaced dummy cell layout for MOS random access memory
US4982369A (en) Self-refresh semiconductor memory device responsive to a refresh request signal
EP0326183B1 (en) Pseudo-static random access memory
US5305283A (en) Dram column address latching technique
US4079462A (en) Refreshing apparatus for MOS dynamic RAMs
GB1361780A (en) Silicon gate complementary mos dynamic ram
US4564925A (en) Semiconductor memory
KR0185725B1 (ko) 반도체 기억장치
US4286178A (en) Sense amplifier with dual parallel driver transistors in MOS random access memory
US4072932A (en) Clock generator for semiconductor memory
US4476548A (en) Dynamic type MOS memory device
US4823322A (en) Dynamic random access memory device having an improved timing arrangement
US5258956A (en) High speed sensing device in a semiconductor memory device
US6256244B1 (en) Self refresh apparatus in semiconductor memory device
JPH0758590B2 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
MKEX Expiry