CA1197023A - Self-aligned power mosfet with integral source-base short and methods of making - Google Patents

Self-aligned power mosfet with integral source-base short and methods of making

Info

Publication number
CA1197023A
CA1197023A CA000418340A CA418340A CA1197023A CA 1197023 A CA1197023 A CA 1197023A CA 000418340 A CA000418340 A CA 000418340A CA 418340 A CA418340 A CA 418340A CA 1197023 A CA1197023 A CA 1197023A
Authority
CA
Canada
Prior art keywords
region
source
insulating layer
regions
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000418340A
Other languages
English (en)
French (fr)
Inventor
Robert P. Love
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of CA1197023A publication Critical patent/CA1197023A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CA000418340A 1982-01-04 1982-12-22 Self-aligned power mosfet with integral source-base short and methods of making Expired CA1197023A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33697282A 1982-01-04 1982-01-04
US336,972 1994-11-10

Publications (1)

Publication Number Publication Date
CA1197023A true CA1197023A (en) 1985-11-19

Family

ID=23318531

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000418340A Expired CA1197023A (en) 1982-01-04 1982-12-22 Self-aligned power mosfet with integral source-base short and methods of making

Country Status (3)

Country Link
JP (2) JPS58138076A (enrdf_load_stackoverflow)
CA (1) CA1197023A (enrdf_load_stackoverflow)
DE (1) DE3240162C2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104060A (en) * 1996-02-20 2000-08-15 Megamos Corporation Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
JPS6184864A (ja) * 1984-09-28 1986-04-30 ゼネラル・エレクトリツク・カンパニイ ベース・ソース電極短絡部を持つ絶縁ゲート半導体素子
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento
DE3719597A1 (de) * 1986-07-01 1988-01-14 Gen Electric Metalloxid-halbleiter-vorrichtungen mit schwellenwert-stabilitaet und weniger kurzschluessen zwischen tor- und quellenelektroden
JPS6344773A (ja) * 1986-08-12 1988-02-25 Matsushita Electronics Corp 縦形ｍｏｓトランジスタの製造方法
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH01235277A (ja) * 1988-03-15 1989-09-20 Nec Corp 縦型電界効果トランジスタ
JP2726481B2 (ja) * 1989-03-10 1998-03-11 株式会社東芝 Ｍｏｓ型半導体装置の製造方法
DE19600780B4 (de) * 1996-01-11 2006-04-13 Micronas Gmbh Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement
DE10007415C2 (de) * 2000-02-18 2002-01-24 Infineon Technologies Ag Halbleiterbauelement
JP4909465B2 (ja) * 2001-03-28 2012-04-04 ローム株式会社 半導体装置およびその製法
JP4970660B2 (ja) * 2001-04-17 2012-07-11 ローム株式会社 半導体装置およびその製法
JP4854868B2 (ja) * 2001-06-14 2012-01-18 ローム株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
JPS6211017Y2 (enrdf_load_stackoverflow) * 1981-01-09 1987-03-16
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104060A (en) * 1996-02-20 2000-08-15 Megamos Corporation Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate

Also Published As

Publication number Publication date
JPH0532911B2 (enrdf_load_stackoverflow) 1993-05-18
DE3240162C2 (de) 1996-08-01
DE3240162A1 (de) 1983-07-14
JPH05251709A (ja) 1993-09-28
JPS58138076A (ja) 1983-08-16

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Legal Events

Date Code Title Description
MKEC Expiry (correction)
MKEX Expiry