CA1197023A - Self-aligned power mosfet with integral source-base short and methods of making - Google Patents

Self-aligned power mosfet with integral source-base short and methods of making

Info

Publication number
CA1197023A
CA1197023A CA000418340A CA418340A CA1197023A CA 1197023 A CA1197023 A CA 1197023A CA 000418340 A CA000418340 A CA 000418340A CA 418340 A CA418340 A CA 418340A CA 1197023 A CA1197023 A CA 1197023A
Authority
CA
Canada
Prior art keywords
region
source
insulating layer
regions
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000418340A
Other languages
English (en)
French (fr)
Inventor
Robert P. Love
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of CA1197023A publication Critical patent/CA1197023A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CA000418340A 1982-01-04 1982-12-22 Self-aligned power mosfet with integral source-base short and methods of making Expired CA1197023A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33697282A 1982-01-04 1982-01-04
US336,972 1994-11-10

Publications (1)

Publication Number Publication Date
CA1197023A true CA1197023A (en) 1985-11-19

Family

ID=23318531

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000418340A Expired CA1197023A (en) 1982-01-04 1982-12-22 Self-aligned power mosfet with integral source-base short and methods of making

Country Status (3)

Country Link
JP (2) JPS58138076A (de)
CA (1) CA1197023A (de)
DE (1) DE3240162C2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104060A (en) * 1996-02-20 2000-08-15 Megamos Corporation Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
JPS6184864A (ja) * 1984-09-28 1986-04-30 ゼネラル・エレクトリツク・カンパニイ ベース・ソース電極短絡部を持つ絶縁ゲート半導体素子
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
IT1204243B (it) * 1986-03-06 1989-03-01 Sgs Microelettronica Spa Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento
DE3719597A1 (de) * 1986-07-01 1988-01-14 Gen Electric Metalloxid-halbleiter-vorrichtungen mit schwellenwert-stabilitaet und weniger kurzschluessen zwischen tor- und quellenelektroden
JPS6344773A (ja) * 1986-08-12 1988-02-25 Matsushita Electronics Corp 縦形ｍｏｓトランジスタの製造方法
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH01235277A (ja) * 1988-03-15 1989-09-20 Nec Corp 縦型電界効果トランジスタ
JP2726481B2 (ja) * 1989-03-10 1998-03-11 株式会社東芝 Ｍｏｓ型半導体装置の製造方法
DE19600780B4 (de) * 1996-01-11 2006-04-13 Micronas Gmbh Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement
DE10007415C2 (de) * 2000-02-18 2002-01-24 Infineon Technologies Ag Halbleiterbauelement
JP4909465B2 (ja) * 2001-03-28 2012-04-04 ローム株式会社 半導体装置およびその製法
JP4970660B2 (ja) * 2001-04-17 2012-07-11 ローム株式会社 半導体装置およびその製法
JP4854868B2 (ja) * 2001-06-14 2012-01-18 ローム株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
DE3016749A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Kontakt fuer mis-halbleiterbauelement und verfahren zu seiner herstellung
JPS6211017Y2 (de) * 1981-01-09 1987-03-16
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104060A (en) * 1996-02-20 2000-08-15 Megamos Corporation Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate

Also Published As

Publication number Publication date
JPH05251709A (ja) 1993-09-28
JPS58138076A (ja) 1983-08-16
JPH0532911B2 (de) 1993-05-18
DE3240162A1 (de) 1983-07-14
DE3240162C2 (de) 1996-08-01

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Legal Events

Date Code Title Description
MKEC Expiry (correction)
MKEX Expiry