CA1180092A - Photodiode with separate absorption and avalanche zones - Google Patents
Photodiode with separate absorption and avalanche zonesInfo
- Publication number
- CA1180092A CA1180092A CA000418122A CA418122A CA1180092A CA 1180092 A CA1180092 A CA 1180092A CA 000418122 A CA000418122 A CA 000418122A CA 418122 A CA418122 A CA 418122A CA 1180092 A CA1180092 A CA 1180092A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- avalanche
- forbidden band
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000009102 absorption Effects 0.000 claims 3
- 230000005684 electric field Effects 0.000 abstract description 16
- 230000003321 amplification Effects 0.000 abstract description 7
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 64
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8124164 | 1981-12-23 | ||
| FR8124164A FR2518817A1 (fr) | 1981-12-23 | 1981-12-23 | Photodiode a zones d'absorption et d'avalanche separees |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1180092A true CA1180092A (en) | 1984-12-27 |
Family
ID=9265362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000418122A Expired CA1180092A (en) | 1981-12-23 | 1982-12-20 | Photodiode with separate absorption and avalanche zones |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0082787B1 (enExample) |
| JP (1) | JPS58114472A (enExample) |
| CA (1) | CA1180092A (enExample) |
| DE (1) | DE3276560D1 (enExample) |
| FR (1) | FR2518817A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0150564A3 (en) * | 1983-10-26 | 1986-05-14 | AT&T Corp. | Electronic device comprising a heterojunction |
| JP3141080B2 (ja) * | 1994-06-22 | 2001-03-05 | ケイディディ株式会社 | 半導体機能素子 |
| US6720588B2 (en) | 2001-11-28 | 2004-04-13 | Optonics, Inc. | Avalanche photodiode for photon counting applications and method thereof |
| US8269222B2 (en) | 2010-05-25 | 2012-09-18 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor photodetector with transparent interface charge control layer and method thereof |
| US8269223B2 (en) | 2010-05-27 | 2012-09-18 | The United States Of America As Represented By The Secretary Of The Army | Polarization enhanced avalanche photodetector and method thereof |
| US9379271B2 (en) | 2013-05-24 | 2016-06-28 | The United States Of America As Represented By The Secretary Of The Army | Variable range photodetector and method thereof |
| US9893227B2 (en) | 2013-05-24 | 2018-02-13 | The United States Of America As Represented By The Secretary Of The Army | Enhanced deep ultraviolet photodetector and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52101990A (en) * | 1976-02-21 | 1977-08-26 | Hitachi Ltd | Semiconductor device for photoelectric transducer and its manufacture |
| JPS5513907A (en) * | 1978-07-17 | 1980-01-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalnche photo diode with semiconductor hetero construction |
| JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
-
1981
- 1981-12-23 FR FR8124164A patent/FR2518817A1/fr active Granted
-
1982
- 1982-12-20 CA CA000418122A patent/CA1180092A/en not_active Expired
- 1982-12-21 JP JP57224814A patent/JPS58114472A/ja active Pending
- 1982-12-21 DE DE8282402340T patent/DE3276560D1/de not_active Expired
- 1982-12-21 EP EP82402340A patent/EP0082787B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2518817A1 (fr) | 1983-06-24 |
| EP0082787B1 (fr) | 1987-06-10 |
| EP0082787A3 (en) | 1984-09-05 |
| DE3276560D1 (en) | 1987-07-16 |
| EP0082787A2 (fr) | 1983-06-29 |
| JPS58114472A (ja) | 1983-07-07 |
| FR2518817B1 (enExample) | 1985-05-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEC | Expiry (correction) | ||
| MKEX | Expiry |