FR2518817A1 - Photodiode a zones d'absorption et d'avalanche separees - Google Patents

Photodiode a zones d'absorption et d'avalanche separees Download PDF

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Publication number
FR2518817A1
FR2518817A1 FR8124164A FR8124164A FR2518817A1 FR 2518817 A1 FR2518817 A1 FR 2518817A1 FR 8124164 A FR8124164 A FR 8124164A FR 8124164 A FR8124164 A FR 8124164A FR 2518817 A1 FR2518817 A1 FR 2518817A1
Authority
FR
France
Prior art keywords
layer
avalanche
substrate
absorption
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8124164A
Other languages
English (en)
French (fr)
Other versions
FR2518817B1 (enExample
Inventor
Pierre Poulain
Baudouin De Cremoux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8124164A priority Critical patent/FR2518817A1/fr
Priority to CA000418122A priority patent/CA1180092A/en
Priority to EP82402340A priority patent/EP0082787B1/fr
Priority to DE8282402340T priority patent/DE3276560D1/de
Priority to JP57224814A priority patent/JPS58114472A/ja
Publication of FR2518817A1 publication Critical patent/FR2518817A1/fr
Application granted granted Critical
Publication of FR2518817B1 publication Critical patent/FR2518817B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

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  • Light Receiving Elements (AREA)
FR8124164A 1981-12-23 1981-12-23 Photodiode a zones d'absorption et d'avalanche separees Granted FR2518817A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8124164A FR2518817A1 (fr) 1981-12-23 1981-12-23 Photodiode a zones d'absorption et d'avalanche separees
CA000418122A CA1180092A (en) 1981-12-23 1982-12-20 Photodiode with separate absorption and avalanche zones
EP82402340A EP0082787B1 (fr) 1981-12-23 1982-12-21 Photodiode à zones d'absorption et d'avalanche séparées
DE8282402340T DE3276560D1 (en) 1981-12-23 1982-12-21 Photodiode with separated absorption and avalanche regions
JP57224814A JPS58114472A (ja) 1981-12-23 1982-12-21 別個の吸収ゾ−ンとアバランシエゾ−ンとを有するホトダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8124164A FR2518817A1 (fr) 1981-12-23 1981-12-23 Photodiode a zones d'absorption et d'avalanche separees

Publications (2)

Publication Number Publication Date
FR2518817A1 true FR2518817A1 (fr) 1983-06-24
FR2518817B1 FR2518817B1 (enExample) 1985-05-17

Family

ID=9265362

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8124164A Granted FR2518817A1 (fr) 1981-12-23 1981-12-23 Photodiode a zones d'absorption et d'avalanche separees

Country Status (5)

Country Link
EP (1) EP0082787B1 (enExample)
JP (1) JPS58114472A (enExample)
CA (1) CA1180092A (enExample)
DE (1) DE3276560D1 (enExample)
FR (1) FR2518817A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150564A3 (en) * 1983-10-26 1986-05-14 AT&T Corp. Electronic device comprising a heterojunction
JP3141080B2 (ja) * 1994-06-22 2001-03-05 ケイディディ株式会社 半導体機能素子
US6720588B2 (en) 2001-11-28 2004-04-13 Optonics, Inc. Avalanche photodiode for photon counting applications and method thereof
US8269222B2 (en) 2010-05-25 2012-09-18 The United States Of America As Represented By The Secretary Of The Army Semiconductor photodetector with transparent interface charge control layer and method thereof
US8269223B2 (en) 2010-05-27 2012-09-18 The United States Of America As Represented By The Secretary Of The Army Polarization enhanced avalanche photodetector and method thereof
US9379271B2 (en) 2013-05-24 2016-06-28 The United States Of America As Represented By The Secretary Of The Army Variable range photodetector and method thereof
US9893227B2 (en) 2013-05-24 2018-02-13 The United States Of America As Represented By The Secretary Of The Army Enhanced deep ultraviolet photodetector and method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2707180A1 (de) * 1976-02-21 1977-09-01 Hitachi Ltd Avalanche-photodiode mit verringerter lawinendurchbruchspannung
GB2025693A (en) * 1978-07-17 1980-01-23 Kokusai Denshin Denwa Co Ltd Avalanche photo diode with semiconductor hetero structure
EP0053513A2 (en) * 1980-12-02 1982-06-09 Fujitsu Limited Avalanche photodiodes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2707180A1 (de) * 1976-02-21 1977-09-01 Hitachi Ltd Avalanche-photodiode mit verringerter lawinendurchbruchspannung
US4083062A (en) * 1976-02-21 1978-04-04 Hitachi, Ltd. Avalanche photodiode with reduced avalanche breakdown voltage
GB2025693A (en) * 1978-07-17 1980-01-23 Kokusai Denshin Denwa Co Ltd Avalanche photo diode with semiconductor hetero structure
EP0053513A2 (en) * 1980-12-02 1982-06-09 Fujitsu Limited Avalanche photodiodes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *
EXBK/81 *

Also Published As

Publication number Publication date
CA1180092A (en) 1984-12-27
EP0082787B1 (fr) 1987-06-10
EP0082787A3 (en) 1984-09-05
DE3276560D1 (en) 1987-07-16
EP0082787A2 (fr) 1983-06-29
JPS58114472A (ja) 1983-07-07
FR2518817B1 (enExample) 1985-05-17

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