JPS58114472A - 別個の吸収ゾ−ンとアバランシエゾ−ンとを有するホトダイオ−ド - Google Patents
別個の吸収ゾ−ンとアバランシエゾ−ンとを有するホトダイオ−ドInfo
- Publication number
- JPS58114472A JPS58114472A JP57224814A JP22481482A JPS58114472A JP S58114472 A JPS58114472 A JP S58114472A JP 57224814 A JP57224814 A JP 57224814A JP 22481482 A JP22481482 A JP 22481482A JP S58114472 A JPS58114472 A JP S58114472A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- avalanche
- photodiode
- thickness
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8124164 | 1981-12-23 | ||
| FR8124164A FR2518817A1 (fr) | 1981-12-23 | 1981-12-23 | Photodiode a zones d'absorption et d'avalanche separees |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58114472A true JPS58114472A (ja) | 1983-07-07 |
Family
ID=9265362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57224814A Pending JPS58114472A (ja) | 1981-12-23 | 1982-12-21 | 別個の吸収ゾ−ンとアバランシエゾ−ンとを有するホトダイオ−ド |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0082787B1 (enExample) |
| JP (1) | JPS58114472A (enExample) |
| CA (1) | CA1180092A (enExample) |
| DE (1) | DE3276560D1 (enExample) |
| FR (1) | FR2518817A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0150564A3 (en) * | 1983-10-26 | 1986-05-14 | AT&T Corp. | Electronic device comprising a heterojunction |
| JP3141080B2 (ja) * | 1994-06-22 | 2001-03-05 | ケイディディ株式会社 | 半導体機能素子 |
| US6720588B2 (en) | 2001-11-28 | 2004-04-13 | Optonics, Inc. | Avalanche photodiode for photon counting applications and method thereof |
| US8269222B2 (en) | 2010-05-25 | 2012-09-18 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor photodetector with transparent interface charge control layer and method thereof |
| US8269223B2 (en) | 2010-05-27 | 2012-09-18 | The United States Of America As Represented By The Secretary Of The Army | Polarization enhanced avalanche photodetector and method thereof |
| US9379271B2 (en) | 2013-05-24 | 2016-06-28 | The United States Of America As Represented By The Secretary Of The Army | Variable range photodetector and method thereof |
| US9893227B2 (en) | 2013-05-24 | 2018-02-13 | The United States Of America As Represented By The Secretary Of The Army | Enhanced deep ultraviolet photodetector and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52101990A (en) * | 1976-02-21 | 1977-08-26 | Hitachi Ltd | Semiconductor device for photoelectric transducer and its manufacture |
| JPS5513907A (en) * | 1978-07-17 | 1980-01-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalnche photo diode with semiconductor hetero construction |
| JPS5793585A (en) * | 1980-12-02 | 1982-06-10 | Fujitsu Ltd | Semiconductor photoreceiving element |
-
1981
- 1981-12-23 FR FR8124164A patent/FR2518817A1/fr active Granted
-
1982
- 1982-12-20 CA CA000418122A patent/CA1180092A/en not_active Expired
- 1982-12-21 JP JP57224814A patent/JPS58114472A/ja active Pending
- 1982-12-21 DE DE8282402340T patent/DE3276560D1/de not_active Expired
- 1982-12-21 EP EP82402340A patent/EP0082787B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1180092A (en) | 1984-12-27 |
| FR2518817A1 (fr) | 1983-06-24 |
| EP0082787B1 (fr) | 1987-06-10 |
| EP0082787A3 (en) | 1984-09-05 |
| DE3276560D1 (en) | 1987-07-16 |
| EP0082787A2 (fr) | 1983-06-29 |
| FR2518817B1 (enExample) | 1985-05-17 |
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