CA1171553A - Schottky barrier field effect transistors - Google Patents
Schottky barrier field effect transistorsInfo
- Publication number
- CA1171553A CA1171553A CA000392537A CA392537A CA1171553A CA 1171553 A CA1171553 A CA 1171553A CA 000392537 A CA000392537 A CA 000392537A CA 392537 A CA392537 A CA 392537A CA 1171553 A CA1171553 A CA 1171553A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- field effect
- effect transistor
- gate electrode
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 23
- 230000005669 field effect Effects 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 230000015556 catabolic process Effects 0.000 claims abstract description 20
- 239000002800 charge carrier Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 229920000136 polysorbate Polymers 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000007943 implant Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 230000009850 completed effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005574 cross-species transmission Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- MGGVALXERJRIRO-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-2-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-1H-pyrazol-5-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)O MGGVALXERJRIRO-UHFFFAOYSA-N 0.000 description 1
- HFGHRUCCKVYFKL-UHFFFAOYSA-N 4-ethoxy-2-piperazin-1-yl-7-pyridin-4-yl-5h-pyrimido[5,4-b]indole Chemical compound C1=C2NC=3C(OCC)=NC(N4CCNCC4)=NC=3C2=CC=C1C1=CC=NC=C1 HFGHRUCCKVYFKL-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 235000014786 phosphorus Nutrition 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
Landscapes
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8040795A GB2090053B (en) | 1980-12-19 | 1980-12-19 | Mesfet |
| GB8040795 | 1980-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1171553A true CA1171553A (en) | 1984-07-24 |
Family
ID=10518113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000392537A Expired CA1171553A (en) | 1980-12-19 | 1981-12-17 | Schottky barrier field effect transistors |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4486766A (OSRAM) |
| JP (1) | JPS57128980A (OSRAM) |
| CA (1) | CA1171553A (OSRAM) |
| DE (1) | DE3149101A1 (OSRAM) |
| FR (1) | FR2496990A1 (OSRAM) |
| GB (1) | GB2090053B (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
| JPH0669101B2 (ja) * | 1983-08-25 | 1994-08-31 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| DE3581159D1 (de) * | 1984-10-08 | 1991-02-07 | Fujitsu Ltd | Halbleiteranordnung mit integrierter schaltung. |
| JP2604349B2 (ja) * | 1984-12-12 | 1997-04-30 | 日本電気株式会社 | 半導体装置 |
| GB2172744B (en) * | 1985-03-23 | 1989-07-19 | Stc Plc | Semiconductor devices |
| WO1989001235A1 (en) * | 1987-08-03 | 1989-02-09 | Ford Microelectronics, Inc. | High effective barrier height transistor and method of making same |
| JPH01132170A (ja) * | 1987-11-18 | 1989-05-24 | Toshiba Corp | 電界効果トランジスタ |
| JPH01187837A (ja) * | 1988-01-22 | 1989-07-27 | Agency Of Ind Science & Technol | 半導体集積回路 |
| JPH02122027U (OSRAM) * | 1989-03-17 | 1990-10-04 | ||
| BR9406727A (pt) * | 1993-05-28 | 1996-01-30 | Axiom Bildverarbeit Syst | Aparelho de inspeção automática para classificar artigo de acordo com caracteristica superficial de artigo aparelho de seleção automática aparelho de inspeção automática para categorizar peça de trabalho com base em seu padrão superficial e/ou de core/ou de textura processo para inspecionar artigo automaticamente para classificar o artigo de acordo com uma caracteristica superficical do mesmo |
| JP3102783B2 (ja) * | 1998-02-11 | 2000-10-23 | 三星電子株式会社 | 外部電界を利用して電子放出を活性化させた冷陰極電子放出素子 |
| JP2005150190A (ja) * | 2003-11-12 | 2005-06-09 | Mitsubishi Electric Corp | 電界効果トランジスタ |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US28500A (en) * | 1860-05-29 | Feathebs | ||
| USRE28500E (en) | 1970-12-14 | 1975-07-29 | Low noise field effect transistor with channel having subsurface portion of high conductivity | |
| GB1459231A (en) * | 1973-06-26 | 1976-12-22 | Mullard Ltd | Semiconductor devices |
| GB1507091A (en) * | 1974-03-29 | 1978-04-12 | Siemens Ag | Schottky-gate field-effect transistors |
| US3964084A (en) * | 1974-06-12 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Schottky barrier diode contacts |
| US4156879A (en) * | 1977-02-07 | 1979-05-29 | Hughes Aircraft Company | Passivated V-gate GaAs field-effect transistor |
| JPS53105984A (en) * | 1977-02-28 | 1978-09-14 | Nec Corp | Semiconductor device |
| JPS5457969A (en) * | 1977-10-18 | 1979-05-10 | Sony Corp | Electric field effect transistor |
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| US4193079A (en) * | 1978-01-30 | 1980-03-11 | Xerox Corporation | MESFET with non-uniform doping |
| JPS55153378A (en) * | 1979-05-18 | 1980-11-29 | Matsushita Electronics Corp | Field effect transistor |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
-
1980
- 1980-12-19 GB GB8040795A patent/GB2090053B/en not_active Expired
-
1981
- 1981-12-02 US US06/326,467 patent/US4486766A/en not_active Expired - Fee Related
- 1981-12-11 DE DE19813149101 patent/DE3149101A1/de active Granted
- 1981-12-17 CA CA000392537A patent/CA1171553A/en not_active Expired
- 1981-12-18 FR FR8123711A patent/FR2496990A1/fr active Granted
- 1981-12-19 JP JP56204550A patent/JPS57128980A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4486766A (en) | 1984-12-04 |
| JPH0137857B2 (OSRAM) | 1989-08-09 |
| DE3149101C2 (OSRAM) | 1992-12-17 |
| FR2496990A1 (fr) | 1982-06-25 |
| JPS57128980A (en) | 1982-08-10 |
| DE3149101A1 (de) | 1982-07-29 |
| GB2090053B (en) | 1984-09-19 |
| GB2090053A (en) | 1982-06-30 |
| FR2496990B1 (OSRAM) | 1984-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEC | Expiry (correction) | ||
| MKEX | Expiry |