CA1157575A - Reducing charging effects in charged-particle-beam lithography - Google Patents
Reducing charging effects in charged-particle-beam lithographyInfo
- Publication number
- CA1157575A CA1157575A CA000382040A CA382040A CA1157575A CA 1157575 A CA1157575 A CA 1157575A CA 000382040 A CA000382040 A CA 000382040A CA 382040 A CA382040 A CA 382040A CA 1157575 A CA1157575 A CA 1157575A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- film
- conductive film
- charged
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000694 effects Effects 0.000 title abstract description 4
- 238000002039 particle-beam lithography Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 poly(olefin sulfone Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/178,988 US4323638A (en) | 1980-08-18 | 1980-08-18 | Reducing charging effects in charged-particle-beam lithography |
| US178,988 | 1988-04-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1157575A true CA1157575A (en) | 1983-11-22 |
Family
ID=22654758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000382040A Expired CA1157575A (en) | 1980-08-18 | 1981-07-20 | Reducing charging effects in charged-particle-beam lithography |
Country Status (8)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4440804A (en) * | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
| JPS5948924A (ja) * | 1982-09-14 | 1984-03-21 | Nec Corp | 電子線露光用位置合せマ−ク |
| JPS59132124A (ja) * | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4555169A (en) * | 1983-09-13 | 1985-11-26 | Canon Kabushiki Kaisha | Focus detecting device for a camera |
| US5843623A (en) * | 1996-09-10 | 1998-12-01 | International Business Machines Corporation | Low profile substrate ground probe |
| DE19907621B4 (de) * | 1999-02-23 | 2005-12-15 | Robert Bosch Gmbh | Ätzmaskierung |
| US6528934B1 (en) | 2000-05-30 | 2003-03-04 | Chunghwa Picture Tubes Ltd. | Beam forming region for electron gun |
| US7038204B2 (en) * | 2004-05-26 | 2006-05-02 | International Business Machines Corporation | Method for reducing proximity effects in electron beam lithography |
| WO2008140585A1 (en) * | 2006-11-22 | 2008-11-20 | Nexgen Semi Holding, Inc. | Apparatus and method for conformal mask manufacturing |
| US10991545B2 (en) | 2008-06-30 | 2021-04-27 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
| US10566169B1 (en) | 2008-06-30 | 2020-02-18 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
| JP2016513372A (ja) * | 2014-01-22 | 2016-05-12 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | 荷電留意ビーム処理の間の半導体基板のための電気的なチャージの規制 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3689768A (en) * | 1970-06-18 | 1972-09-05 | Masamichi Sato | Electron beam recording materials |
| US3874916A (en) * | 1972-06-23 | 1975-04-01 | Radiant Energy Systems | Mask alignment system for electron beam pattern generator |
| US3949131A (en) * | 1974-06-19 | 1976-04-06 | Bell Telephone Laboratories, Incorporated | Photomasks with antistatic control |
| US4165395A (en) * | 1977-06-30 | 1979-08-21 | International Business Machines Corporation | Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation |
| GB1604004A (en) * | 1977-10-11 | 1981-12-02 | Fujitsu Ltd | Method and apparatus for processing semi-conductor wafers |
| US4224733A (en) * | 1977-10-11 | 1980-09-30 | Fujitsu Limited | Ion implantation method |
| DE2807478A1 (de) * | 1978-02-22 | 1979-08-23 | Ibm Deutschland | Belichtungsverfahren |
| JPS54116883A (en) * | 1978-03-02 | 1979-09-11 | Mitsubishi Electric Corp | Electron beam exposure method |
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
-
1980
- 1980-08-18 US US06/178,988 patent/US4323638A/en not_active Expired - Lifetime
-
1981
- 1981-07-20 CA CA000382040A patent/CA1157575A/en not_active Expired
- 1981-08-12 FR FR8115609A patent/FR2488730A1/fr active Granted
- 1981-08-13 DE DE19813132080 patent/DE3132080A1/de not_active Ceased
- 1981-08-13 IT IT23502/81A patent/IT1138909B/it active
- 1981-08-13 GB GB8124744A patent/GB2085613B/en not_active Expired
- 1981-08-17 NL NL8103848A patent/NL8103848A/nl not_active Application Discontinuation
- 1981-08-18 JP JP56128295A patent/JPS5754323A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5754323A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-03-31 |
| IT8123502A0 (it) | 1981-08-13 |
| IT1138909B (it) | 1986-09-17 |
| DE3132080A1 (de) | 1982-04-15 |
| NL8103848A (nl) | 1982-03-16 |
| GB2085613A (en) | 1982-04-28 |
| FR2488730B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1984-11-23 |
| FR2488730A1 (fr) | 1982-02-19 |
| GB2085613B (en) | 1984-05-31 |
| US4323638A (en) | 1982-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |