CA1121898A - Radiation-sensitive semiconductor device and method of manufacturing same - Google Patents
Radiation-sensitive semiconductor device and method of manufacturing sameInfo
- Publication number
- CA1121898A CA1121898A CA000310003A CA310003A CA1121898A CA 1121898 A CA1121898 A CA 1121898A CA 000310003 A CA000310003 A CA 000310003A CA 310003 A CA310003 A CA 310003A CA 1121898 A CA1121898 A CA 1121898A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- semiconductor device
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 230000005855 radiation Effects 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 150000002500 ions Chemical class 0.000 claims description 19
- 238000002513 implantation Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 143
- 229910052796 boron Inorganic materials 0.000 description 8
- -1 boron ions Chemical class 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 241000465531 Annea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7709618 | 1977-09-01 | ||
| NL7709618A NL7709618A (nl) | 1977-09-01 | 1977-09-01 | Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1121898A true CA1121898A (en) | 1982-04-13 |
Family
ID=19829110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000310003A Expired CA1121898A (en) | 1977-09-01 | 1978-08-24 | Radiation-sensitive semiconductor device and method of manufacturing same |
Country Status (6)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169144U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1988-05-12 | 1989-11-29 | ||
| GB8913198D0 (en) * | 1989-06-08 | 1989-07-26 | British Telecomm | Guard ring structure |
| US5179431A (en) * | 1989-11-20 | 1993-01-12 | Fujitsu Limited | Semiconductor photodetection device |
| JP2763352B2 (ja) * | 1989-11-20 | 1998-06-11 | 富士通株式会社 | 半導体受光素子 |
| DE102012103699A1 (de) * | 2012-02-15 | 2013-08-22 | First Sensor AG | Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor |
| FR3000610B1 (fr) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode |
| JP7169071B2 (ja) * | 2018-02-06 | 2022-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
| JP2019165181A (ja) * | 2018-03-20 | 2019-09-26 | 株式会社東芝 | 光検出装置 |
| CN115621352B (zh) * | 2022-10-31 | 2025-02-11 | 武汉新芯集成电路股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5252593A (en) * | 1975-10-27 | 1977-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving diode |
-
1977
- 1977-09-01 NL NL7709618A patent/NL7709618A/xx not_active Application Discontinuation
-
1978
- 1978-08-23 DE DE7878200152T patent/DE2861768D1/de not_active Expired
- 1978-08-23 EP EP78200152A patent/EP0001139B1/en not_active Expired
- 1978-08-24 CA CA000310003A patent/CA1121898A/en not_active Expired
- 1978-08-30 AU AU39412/78A patent/AU520456B2/en not_active Expired
- 1978-08-31 JP JP10571778A patent/JPS5449083A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2861768D1 (en) | 1982-06-09 |
| JPS5449083A (en) | 1979-04-18 |
| EP0001139A1 (en) | 1979-03-21 |
| AU3941278A (en) | 1980-03-06 |
| NL7709618A (nl) | 1979-03-05 |
| AU520456B2 (en) | 1982-02-04 |
| JPS5754949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-11-20 |
| EP0001139B1 (en) | 1982-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |