DE2861768D1 - Radiation-sensitive avalanche diode and method of manufacturing same - Google Patents
Radiation-sensitive avalanche diode and method of manufacturing sameInfo
- Publication number
- DE2861768D1 DE2861768D1 DE7878200152T DE2861768T DE2861768D1 DE 2861768 D1 DE2861768 D1 DE 2861768D1 DE 7878200152 T DE7878200152 T DE 7878200152T DE 2861768 T DE2861768 T DE 2861768T DE 2861768 D1 DE2861768 D1 DE 2861768D1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- manufacturing same
- avalanche diode
- sensitive avalanche
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7709618A NL7709618A (nl) | 1977-09-01 | 1977-09-01 | Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2861768D1 true DE2861768D1 (en) | 1982-06-09 |
Family
ID=19829110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE7878200152T Expired DE2861768D1 (en) | 1977-09-01 | 1978-08-23 | Radiation-sensitive avalanche diode and method of manufacturing same |
Country Status (6)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01169144U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1988-05-12 | 1989-11-29 | ||
| GB8913198D0 (en) * | 1989-06-08 | 1989-07-26 | British Telecomm | Guard ring structure |
| US5179431A (en) * | 1989-11-20 | 1993-01-12 | Fujitsu Limited | Semiconductor photodetection device |
| JP2763352B2 (ja) * | 1989-11-20 | 1998-06-11 | 富士通株式会社 | 半導体受光素子 |
| DE102012103699A1 (de) * | 2012-02-15 | 2013-08-22 | First Sensor AG | Halbleiterstruktur für einen Strahlungsdetektor sowie Strahlungsdetektor |
| FR3000610B1 (fr) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode |
| JP7169071B2 (ja) * | 2018-02-06 | 2022-11-10 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
| JP2019165181A (ja) * | 2018-03-20 | 2019-09-26 | 株式会社東芝 | 光検出装置 |
| CN115621352B (zh) * | 2022-10-31 | 2025-02-11 | 武汉新芯集成电路股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5252593A (en) * | 1975-10-27 | 1977-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light receiving diode |
-
1977
- 1977-09-01 NL NL7709618A patent/NL7709618A/xx not_active Application Discontinuation
-
1978
- 1978-08-23 DE DE7878200152T patent/DE2861768D1/de not_active Expired
- 1978-08-23 EP EP78200152A patent/EP0001139B1/en not_active Expired
- 1978-08-24 CA CA000310003A patent/CA1121898A/en not_active Expired
- 1978-08-30 AU AU39412/78A patent/AU520456B2/en not_active Expired
- 1978-08-31 JP JP10571778A patent/JPS5449083A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5449083A (en) | 1979-04-18 |
| EP0001139A1 (en) | 1979-03-21 |
| AU3941278A (en) | 1980-03-06 |
| NL7709618A (nl) | 1979-03-05 |
| AU520456B2 (en) | 1982-02-04 |
| JPS5754949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-11-20 |
| CA1121898A (en) | 1982-04-13 |
| EP0001139B1 (en) | 1982-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |