CA1102923A - Semiconductor metallisation system - Google Patents

Semiconductor metallisation system

Info

Publication number
CA1102923A
CA1102923A CA298,553A CA298553A CA1102923A CA 1102923 A CA1102923 A CA 1102923A CA 298553 A CA298553 A CA 298553A CA 1102923 A CA1102923 A CA 1102923A
Authority
CA
Canada
Prior art keywords
pattern
insulating layer
metallisation
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA298,553A
Other languages
English (en)
French (fr)
Inventor
Johannes A.A. Van Gils
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1102923A publication Critical patent/CA1102923A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
CA298,553A 1977-03-16 1978-03-09 Semiconductor metallisation system Expired CA1102923A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7702814A NL7702814A (nl) 1977-03-16 1977-03-16 Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
NL7702814 1977-03-16

Publications (1)

Publication Number Publication Date
CA1102923A true CA1102923A (en) 1981-06-09

Family

ID=19828174

Family Applications (1)

Application Number Title Priority Date Filing Date
CA298,553A Expired CA1102923A (en) 1977-03-16 1978-03-09 Semiconductor metallisation system

Country Status (6)

Country Link
JP (1) JPS53114686A (nl)
CA (1) CA1102923A (nl)
DE (1) DE2809411A1 (nl)
FR (1) FR2384355A1 (nl)
GB (1) GB1594067A (nl)
NL (1) NL7702814A (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3214991A1 (de) * 1982-04-22 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Halbleiterbaustein mit diskretem kondensator
FR2634318B1 (fr) * 1988-07-13 1992-02-21 Commissariat Energie Atomique Procede de fabrication d'une cellule de memoire integree

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161617C (nl) * 1968-06-17 1980-02-15 Nippon Electric Co Halfgeleiderinrichting met vlak oppervlak en werkwijze voor het vervaardigen daarvan.
GB1364677A (en) * 1970-07-10 1974-08-29 Philips Electronic Associated Semiconductor devices and methods of making semiconductor devices
JPS5088980A (nl) * 1973-12-10 1975-07-17

Also Published As

Publication number Publication date
FR2384355A1 (fr) 1978-10-13
NL7702814A (nl) 1978-09-19
GB1594067A (en) 1981-07-30
DE2809411A1 (de) 1978-09-21
JPS53114686A (en) 1978-10-06

Similar Documents

Publication Publication Date Title
EP0110211B1 (en) Bipolar transistor integrated circuit and method for manufacturing
EP0055161B1 (en) Multilayer metal silicide interconnections for integrated circuits
US5002902A (en) Method for fabricating a semiconductor device including the step of forming an alignment mark
US4102733A (en) Two and three mask process for IGFET fabrication
US3777364A (en) Methods for forming metal/metal silicide semiconductor device interconnect system
EP0166983A2 (en) Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices
EP0043942A2 (en) Method for forming integrated circuits having a pattern of narrow dimensioned dielectric regions
US4234357A (en) Process for manufacturing emitters by diffusion from polysilicon
EP0444695B1 (en) Semiconductor device having multilayered wiring structure and method of manufacturing the same
KR100215847B1 (ko) 반도체 장치의 금속 배선 및 그의 형성 방법
KR100228619B1 (ko) 자기-정합 접점 형성 방법 및 구조
EP0542262B1 (en) Method for forming a metal conductor in semiconductor device
US20010045659A1 (en) Conductive implant structure in a dielectric
CA1045724A (en) Method for forming integrated circuit regions defined by recessed dielectric isolation
EP0058124B1 (en) Polycrystalline silicon schottky diode array and method of manufacturing
US4488166A (en) Multilayer metal silicide interconnections for integrated circuits
US3849270A (en) Process of manufacturing semiconductor devices
US4520554A (en) Method of making a multi-level metallization structure for semiconductor device
US3449825A (en) Fabrication of semiconductor devices
EP0214702B1 (en) Method of manufacturing a semiconductor device with mutually insulated strip-shaped silicon electrodes overlapping each other
CA1102923A (en) Semiconductor metallisation system
US4883772A (en) Process for making a self-aligned silicide shunt
GB2179792A (en) Bipolar transistor
US4628339A (en) Polycrystalline silicon Schottky diode array
US4360823A (en) Semiconductor device having an improved multilayer wiring system

Legal Events

Date Code Title Description
MKEX Expiry