CA1093704A - Semiconductor device and method of enveloping the semiconductor device - Google Patents

Semiconductor device and method of enveloping the semiconductor device

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Publication number
CA1093704A
CA1093704A CA296,495A CA296495A CA1093704A CA 1093704 A CA1093704 A CA 1093704A CA 296495 A CA296495 A CA 296495A CA 1093704 A CA1093704 A CA 1093704A
Authority
CA
Canada
Prior art keywords
mould
envelope
semiconductor device
synthetic resin
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA296,495A
Other languages
French (fr)
Inventor
Gerard J. Scholten
Johannes Brandsma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7701284A external-priority patent/NL7701284A/en
Priority claimed from NL7701283A external-priority patent/NL7701283A/en
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1093704A publication Critical patent/CA1093704A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/03—Injection moulding apparatus
    • B29C45/04—Injection moulding apparatus using movable moulds or mould halves
    • B29C45/0408—Injection moulding apparatus using movable moulds or mould halves involving at least a linear movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/04—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
    • C08J9/06—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent
    • C08J9/10—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent developing nitrogen, the blowing agent being a compound containing a nitrogen-to-nitrogen bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/03—Injection moulding apparatus
    • B29C45/04—Injection moulding apparatus using movable moulds or mould halves
    • B29C2045/0475—Injection moulding apparatus using movable moulds or mould halves continuously movable moulds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2381/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen, or carbon only; Polysulfones; Derivatives of such polymers
    • C08J2381/04—Polysulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Molding Of Porous Articles (AREA)

Abstract

ABSTRACT:

In a semiconductor device comprising a semiconductor element, terminal conductors, which are in electrical connection with contact pads on the semiconductor element and an envelope of synthetic resin, the envelope is formed from an encapsulation, preferably an epoxy resin, protecting the semiconductor element and the electrical connections against ambient influences, and an envelope part of foamed thermoplastic synthetic resin which determines the outer shape and is provided around said encapsulation by means of injec-tion moulding.

Description

11[1~3~
P~IN 8~82 GELI/TJ

23-1-19q8 ~ .
"Semiconductor device and method o~ enveloping the semiconductor device".

The invention relates to semiconductor devices comprising a semlconductor element, conductor leads which are in electrical connection with contact pads o:f` the semiconductor element, and an envelope 5 of syIlthetic resin ln which -the semiconductor element, its electrical connections~ and part of the conductor leads are aeoomodated.
~: ~ Envelopes of sy~the-tic resin : are convention- : :
` ~ :
nally used in semiconductor~ devices, such as transistors : : -10 and integrated circuits 0 It has been general .~ practice to: use~ as an e~veloping material a theDmosetting resln and: to form the envelope by transfer mouldingO This wide application~ has resul.-ted in both the properties of :enveloping:~material and the process control 15 being generally optimized to ob tain envelopes of` a ~ favourable quallty. Nevertheless, such an enve~
oplng~ ~te~chnlque exhlblts drawbacks .~ The rate; at whlch devioes can be provided :wlth envelope~s is ~ :
restrlc~ted by ~ the: ~t~me ~whloh ~ls~ ~necessary t:o ~cure 20~ the thermo~sett~ng~resin:~ ~and this~ has a ~detrimental nfluence~on the prloe~of ~the~ s~emiconductor~ ùevioer ~ :
Furthermore:, t~:e~ viscosity~ o:~ the enveloping material lS~ low so that~ during enYeloplng measure~ have to be~ taken to `~obt.ai.n :good; ~seallng~ the~ ~mould so as :~`

25 to prevent;~flashlng.~ Fu:Lthermore, a materl.al, for example WQX, : is incorporated~: in the material~ o~f the envelope so that l~he enve' ope can :be~ ~1ore readll~ de-tached f`rom the mould;
2 -- :

~
3~
PHN. 8682.
23-1-1978.

however, such an addition can reduce the quality of the enveloping material.
Envelopes of thermoplastic synthetic resin have not found acceptance in practice. The viscosity of the liquid thermoplastic synthetic resin is comparatively high~ so that injection moulding with this materlal can rapidly result in damage of, for example, connection~wires between the semiconductor element and the conductor leads.
The injection moulding process has to ~e carried out at comparatively high pressure so as to readily fill the mould cavity, and this pressure has to ~e maintained sub-sequently for~a certaln p~erLod~o~ tlme~so as to~compensate for shrlnkage~;during~solidi~fl~cati~on~of the synthetic res~in in~the~ mould~ o~nse~quently the ~cycle time is rather long.
5;~ Furthermore,~the protection with thermoplastic synthetlc resln~affords from ambient inf:Luences, such as contami-nants~ln~the;envlronment~ ls not optimum.
Acoording to the invention, there lS provid~
e~d a~semiconductor~device comprising~a s~emiconductor e~le-~
20~ ; me~t,~conductor leads which are in electrical connectionwith contact pads on the semi~conductor element~and an e~velop~e of~synthetic resin in which the semiconductor elemenis,~ ts electrlcal~connectlons~ and part o~the ~ ;
` conductor l~eads~arc acc~ommodated, said envelope compris-25~ ing an inner encapsulation which protects the~semiconduc-.tor~element~and~lts eleotrlcal~oonnectlons agalnst ambl~ent `: ~ : : `:: :
.

:
~:~9370~ ~
`: PHN 8682 influences and a part of foamed thermoplastic synthetic resin which is i.njection moulded around said encapsulation and determines at least part of the outer shape of the envelope.
:: 5 The inner encapsulation protecting against ~; ambient~in~luences can~be~provlded in a simple manner and prevents damage~t~o~the semloonductor element and wires~ during thè::further enveloping with~the~ thermoplastl~c materlal. The thermoplastlo :;::~
:10~ envelope~par~t Qan bs formed by~spraylng lnto:a~
mouldl~under pressure a thermopastic ~ synthe~tic re;sln pr~ovlded wi~th~a:foaming agent;~ln spit~e~
o~the~comparatlve~ly~hlgh vis¢oslty~of~the~ thermo~
:plastlo~syn~the~tl~c resin~ damage to the~unlt ;
5~ belng~e:nveloped,~can~be~avolded bscause this unit is~already~encapsulated. As compared with thermosetting~reslns, no~speolal requlrements `ns:ed~be-~imposed~;~on ~hel~s~eàling.o~ the~mould~to pre~
:: vent flash-products~adhe~ring~to~the device envelope.
20 ~ Furthermo~e~ the~appli~cation~of~subse~quent pressure to~
he~:thermoplastio~l~synthe~t~ic:~ resin~in the mould~is not ne~oessar~:~slnoa~the~foamin~g~ ent-ensures the~ expanslon~
of::~the~material~ s:o~ that~t~e~ outer~s~ape o~ the envelope PHM. 8682.

23-~1978.
.
automatically corresponds to the mould cavity. The foamed thermoplastic synthetic resin envelope thus can be pro-vided in a very rapid process particularly i~ the mould is cooled. The envelope of such a semiconductor device thus can be manufactured at a comparatively low price, can be o~ good quality and have a smooth outer shape with accurately de~ined dimensions.
The encapsulation which protects'the semi~
conductor element and its connections against ambient ;10 ~ influences~may advantageously conslst of a thermosetting synthetlc~resin, for example a slnter~d~powder~coatlng of an ~epoYy~ r~esin. The protecting encapsulation can be~
provid~ed ln~a~rapid pro~cess and as w~ be descrlbed hereinaf~er~several of~'semiconductor devices can be en-15~ capsu~lated~simultaneously ln such a way as to both savetime~and avoid~complicat~ed~moulds;'~furthermore, by using such a process, no materlal~need~be added to the thermo-setting material to detach the e~capsulated product ~rom a mo~ld~ so`'that~the~quallty;o~f~the~-encapsulatlon can~ be 20~ axtremely~good.
The~thermoplastic synth~etlc re~sin may~ad~
~antageou~sly cons~lst~of on6 0~f~the materials polypropene and~p~olyphenylene sulphide~wi~th azo~icarbonamide as the foaming~agent.~ In another~advantageous~form, the thermo-25~ plastlc~-~synthetl~o resln~consists of a~poIyamide~foamed~
with a;blowlng~agent comprlslng~ no~oarbonate~as lts~

:

- ~93~ 23-1-197~

main constituent.
According to the invention, a method of enveloping a semiconductor device is characteri~ed in that a semiconducbor element which is connected 01ectrically to connection conductors is provided with an encapsulation protecting against ambient influences~ after which the encapsulated semicon-ductor element lS provlded in a mould having a :
cavity determining the outer shape of the envelope, and that the mould is moved with respect to the discharge openings of an injection moulding device, :~
n:~ in which~first a wall part of the mould shuts.
off the dlscharg~e openings~, then~a feed opening~
of the~ mould is po~s:itioned before the discharge 15 ~opening, and a mi~ture of;foamable thermoplastic ~ :
: material and a blowing agent is injected in the mould cavit~ and futhermore a wall part of the mould shuts off agai~ ~the discharg~ ~pening, and the ~: :
enveloped semlconductor devioe~ i5 taken~out of the ~
20:: mould after cooling the foamed:-thermoplastic material.
::
By using a matri~ which can~be~moved wlth respect to the discharge~openings,~;a v~ery;rapid enveloping process oan:~be obtained.~
An embodiment ~of thé lnvention will now ~be desoribed,:by way of example, wlth reference : to the accompanyi~g diagrammatic:drawing~ in which~

: ~ :: : : : ~ : ` :

:

3L~3~376~

Figure 1 is a front elevation of a semiconductor de-vice assembly without an envelope;
Figure 2 is a front elevation of the device assembly shown in Figure 1 when provided with an encapsulation;
Figure 3 is a side elevation of the device assembly shown in Figure 1, and Figure 4 is a front elevation of the semiconductor device formed from the assembly shown in Figures 2 and 3 after providing a foamed thermoplas~tic envelope.
Figures~5 and~6 schematically and not to scale show a number of examples o~ înjection-moulding installations partly in cross-sectlon and partly in p1an view.
Flgures 7 through 12, Figure 8 being on the same sheet as Figure 5 and~Figure~1~2 being on the same sheet as Figure 9, 15 ~ ln schematlc cross-sectlon~show an inJection rnoulding-installat10n, which ;s particularly~suitable for continuously encapsulating semiconductor devic~s with a synthetic res;n.
; Figure 1 shows a par~ of a semiconductor device having terminals provlded by conductor leads 19 2 and~3; the conductor ~:
ZO ~ ~ 3 has a supporting~face 4 for a semi~conductor element S~ and the lndiv;dual leads 1, Z~and~3~are~united~ln~a;~cont;nuous con-ductor~strip,~only~part of wh;ch~is~shown~in F;gure l. The sem;conductor;el`ement 5~is secured~to~the support 4 by means ~ -of,~for~examp~le,~a solder~or an~electr;ca~lly conduct~lve ad~ 5 ~ ~ hesive. Connection~wires 6 and~7 form an electrical;con~nection between~contact pads~on~the sem1conductor element S and ends o~ the conductors 1 and~2.

- 7 -~

.
.

,7~ ~ PHN 8682 23.1.1978 This construction is usual for a transistor which is provided with au envelope of synthetlc resin.
In a sen~iconductor device in accordance with the present invention the envelope consis-ts of two parts. A ~irst envelope part (Figures 2 and 3) consists of an encapsulation 8 of a material which protects the semiconductor element 5 against amblent in~luences. This encapsulation 8 is provided around the support 4, the semiconduotor element 5, the con-nection wires 6 and 7 and the ends of the conductors2 and 3 ~acing the semiconductor element. In a ~a~ourable construction the encapsulation consists of a thermosetting synthetic resln, ~for example an ePo~r resin. The encapsulation may~advantageously 15~ ~ be provided by heating a conductor strlp cont~alning several semlconductor assemblies~and providing powder~on~the parts~to ~e covered, for~example a powdered~mixture~o~ epoxy resin~and hardener. The :
~ ~ powder which is only allowed to ContaGt the heated , ~; ~20 parts to b~e covered, melts, adheres to these parts and oures.~Thls powder oover~ing lS prefera~lr~oarried ou~ in a whirl~sintering bath. I~ desired more than one dipping may be~carrled out so as to gro~
the e~ncapsulation~to~the~desired~thi~ckness. ;
25~ The~second part of the envelope (~lgure~4 c~onsists~of an~envelope~part 9 of ~oamed thermoplas-tic synthetic resin~whlch is provided by means of injection mouldlng.~he injection moulding can advantageously be carried out by providing~a ~her~oplastic , P~'~ 8682 3.1.1978 ~V~3'70~:

synthetic resin with a foamiIlg agent under pressure in a cooled mould. The method of providing the second part of the envelope will be described in detail hereinafter with reference to Figures 5 12.
As a r~sult of the use of the foaming agent~ the mould cavit~ is entirel~ ~illed and the envelope accurately assumes the shape of -the mould cavity without requiring the applicatlon of subse-quent pressure. The envelope can be pro~ided in a particularly rapld productlon process, which is -- facilitated by cooling the mould. As a result of the comparatlvely high viscosity of the thermoplastic synthetlc resln~no speclal requirements need be imposed up~on the sealing of the mouid; the envelope 5~ part 8 protects the semlconductor devioe against damage when~Ll]lng thé mould.
A~ter~;~provlding the envelope in this manner the~conductor strip lS 6evered in kno~n manner~to separate the conductor leads 1, 2 and ~ ~o~ the~devlce. The;resulting~d6vlc6~ls shown in Figure~4.
The combination of the protecting encap-sulat1on~8~and~the~cam6d~thermo~6tlc~ env610pe 9 has enab~ed 6emiccnductor device6~ to be manufactured~
5~ at a fast~rat6~and~a 1cw prioe.~Th6 env610pe may have any desired outline.
It~has~ proved advantageou6 to u6e poly~
prcpene or po1yphenylene ~ulphide as a thermoplastic re6ln and azodicarbonamlde as a~fcaming agent. Other :
~ .' ~0 ~ 3 ~ ~ ~ PHN 8682 23.1.1978 thermoplastic synthetic resins and foaming agents, however, may alternatively be used. For examp~e, forming the envelope part o~ polyamide foamed wi-th a blowing agent comprising zinc carbonate as its main constituent has proved very ef~ective.
In the embodiment described the seml~
conductor device is a transistor. It will be obvi~
ous that the invention ma~ also be used with other semiconductor devices, for example integrated cir-oults, and in some~devioes a heat sink may formpart of the outline of the envelope.

.
The provision~of~the ~oamed thermoplastic envelope~wlll be desorlbed;with ~reference to Flgures 5-12. In the diagrammaticall~ compression arrangement iS~ ~shown in ~lgures 5~and 6,~th~e semiconductor devlce is not yet ln the~mould. In Figure 7 the place o~
the semioonduct~or~;device ln the mould is sho~n.
In Figure 5 the reference numeral l1 denotes a sohematlcally shown~mlxlng and compression 20~ arrangem~ent for plastlos.~The constructlon thereof will not be discussed in more detail because it may be of the conventional type, for example an e~xtruder devloe. Thè~compre~slon arr~ngement 11 has a discharge opening 12,~which is surrounded by 25~ a cooling plate~13~whlch is~thern1all~ lnsulated there~rom. Underneath the discharge~openlnq~12 and the cooling plate~13 a~guide~ay 14 is located acrass which moulds 15;can~be moved. The moulds 15;have suoh a height that their top sur~aoesengage~with -the cooling : ~

lU~3~4 PHN 8682 23.1.1978 plate 13 and the dlscharge opening 12, respectively, whilst if necessary the cooling plate 13 or the guideway 14 can resiliently be urged slightly I towards each other. Each of the moulds 15 has a ¦ 5 mould cavity 17 and a feed opening 18. In the mixing and compression arrangement a thermosetting plastic mixed with a foaming agent is brought at a tempera~
ture a~d pressure at which this mixture is liquid.
Undern:eath the discharge opening 12, ~ ~ 10 which is continuously open, a mould 15 is slid i ~ ~so -that at a given instant the feed opening 18 ~ comes in ~ront of the discharge opening 12 and : ~ , a thermoplastic material is formed into the mould cavity 17. The mould may move continuously or may~
15~; be sbopped~brlefly if desired. After the mould 15 has ad~anced~ the discharge opening l2 is ~ut off by the top of~the~mould 15 which severe the Plow of plastlc. Th~e plasti~c remains pressurized and at a high temperature in the~arrangsmsnt 11 until j20~ the féed~opening of the next~ mould 15 is in front o~ the discharge opening.~The filled mould is now advanced through the guideway, the plate ~1~3 closing ; ths ~ssd~op~ening ~18 and~ ~urthsr~ oooling ths mould j through~contaot wlth sald~mould.~During~oooling ths th9rmopIastlc material w~ shrlnk~but; t~h~s is j compensated~for by ths~sxpa~slon o~ ths foaming agen-t, so that ths mould~cavlty~always remains correctly illed. The moulds can~be~moved along the guideway 15 either continuously or discontinuously, the feed ~ :
- : : , .

~ ~ 9 3 7 ~ 4 23.1.1978 opening of a mould each tlme allowing the plastic to flow into the mould cavity through the discharge opening - ~or some time. Because a foaming agent has been added to the plastic, the plastic in the mould need not be "post-compressed" until the plastic has set. This means that a fast oycling time is obtained.
Figure 5 shows moulds 15 in which between the feed ~opening 18 and the actual mould cavity 17 another duct is formed, so that the moulded product still exhibits a sprue. Sometimes this is not annoying ~r even desireable. Ifsuch a sprue is undesireable, moulds 10 may be used as shown in ~igure 6. In these moulds the upper wal~l has been dispensed~with completely, so that in thla case~the feed opening ia oonatltuted by this fully open wall. This has the advantage that the dlaoharge opening 12 communicates with the mould cavity during substantially the entire period that the mould is dlsposed~underneath the feed openlng. Thus, a correct ~ : :
*~ ng is now alao enaured when the moulds are rapidly 20~ ad~anced.
One~of the slde walls o* the obJect to be formed now slides along the oooling~plate 13. It has -~ side been found thatlthia/wa1l neverthelesa has a very sa*isfactory~appearance~and that owing to the foaming aotlon the mould oavity alwaya remains correotly ~illed, alao~durlng coollng, and~ahrlnkage ~la;~hardly peroeptible.
igures 7 through 1~2 schematically show an apparatua for~eno;apsula-tln~g a ~tran~slator wlth a foamed thermoplastio mater~ial,~the compresslon~and mixing de-~ 12 -:

~g3~7~ PHN 8682 23.1.1978 vice being omitted. This apparatus comprises a basic section 20 (also sefe Figure 8~ in which a bore 21 for the discharge opening of the mixing and compression devioe as well as openings 22 and 23 for cooling water supply and dralnage are formed.
Furthermore, recesses 24 are ~ormed in the basic section 20 for the ~ixation of yokes 25 which carry the guide ways 26 and 27 (see Figure 9). ~ ~
~ To the basic section 20 a cooling plate 28 consisting of a plurality of parts is secured (see Fig~re 10) ln~such a way tha-t op0ning329, 3O
and 31 thereof ccrrespond to the openings 21, 22 and , 23-A shaft 34 which~is~provlded wlth a plate~
15~ 35 is ~jo r~alled~ln~the bas~io sect~on 20.~Thls~ plate 35carrles~an~inner~ring~of mould portions~36~, between whioh~movable mould portions~37~are~lnterposed, which on~their slde~which faoes the axis of the , ~ :
shaft 34~each~ carry a gui~e wheel 38 which bears aga~inst~the~gulde1~ay ;27 (s~ee~Flgure~
The plate 35 ~furthe~rmore~carrle6~;a rlng of~
arms 40, which are pivotabl~ connected to the plate 35 at the loaation 41~.~ Eaoh of~'the arms 4O carrles two,mould~walls 42 be-tween whloh a mbvable mould ~ 25~ wa]l 43~;is~int0rpo~sed,~whlch lS provided with a f ~ roller 44~which~ls~adapted t~o co~-operate with the~
guldeway~26,~ Eaoh~ ar::~ the~arms 49~furthermore com-; prises a cam 45~whioh~ lS adap~ted~to~oo-operate wlth a slot 46 so as~to swing out the ar~

f ~ ' In the oollar ,i1 recesses Qre formed which :
~ 13 -:

-~93~4 - 23.1.1978 accommodate the lead 52 of semiconductor devices 53 to be encapsulated which are disposed in the mould cavity 50, the semiconduc-tor devices having the shape as shown in Figures 2 and 3.
The operation of the present apparatus is as follows: By a drive means coupled thereto the shaft 44 is rotated, so that all parts connected to said shaft are also moved. As the moulds run between the guideways 26 and 27 the mould portions will perform a specific cycle of movement. Starting from position~21, 29 where the discharge opening .
of the mixing and compression device is located, opposite the mould cavity 50 the reproduction cycle will be as~indicated in Figure 12.
15~ Durlng~stage I one~of the moulds communi-oates wlth~the discharge openlng so that the mould cavity is filled wi~th an amount of plastic.
During stage II the plastic is cooled in that o~le of the~sldes~of the envelope slides Zo~ along the~ooollng~pla-te 28, whioh~is cooled by a stream o~cooling~wa~er~which is~passed through it.
Shrinkage as a result of oooling lS then compensated for by the expans~lon of~the foaming~agent so that the~mould~cavity~always rsmains ~ilIed and env0lopes 25 ; of ~mooth~appearanos ~are~obtained.
At~the;~beglnning of~stage III the cam 45 engages~w~;th the s~lot 46, a~ter whlch the~arm 40 pivots about polnt~41 and the~mould is opened as is shown in ~igure 7~in the lower~position.
: ' : : ~ ~ : :
: ~ : : :

~ - 14 -::: :
. : ~

~93~ ~ PI~ 8682 23.1.1978 The moulded products can now be removed from the mould in stage IV, the arm 40 being retained in its open position throughout this stage.
Finally, in stag0 V the mould is closed again, after which a new cycle can start. It will be evident from the foregoing that by means of this machine semiconductor devices with an envelope of thermoplastic resin can be moulded in a continuous manner. The production rate can then be very high.
In the discharge opening of the com-pression device no intricate valve need be mounted, because the mould walls themselves ensure that the discharge~opening is shut off so as to sever the plastics flow until the next mould ari~es. As one side o~ the mould is in ~act open, and constit~tes the f`eed~opening~ol ~the mould, and is subsequently slid ~past ~the cooling plate, the formation of spures :
on the product~is completely avoided and furthermore a very good heat transfer to the cooling plate is ; achieved~
:: ~ , ; :
:

:~ : : : :

~: : : ' : :
~ - 15 --:

~ - .
.:

Claims (4)

THE EMBODIMENTS OF THE INVENTION IN WHICH AN EXCLUSIVE
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS
1. A semiconductor device comprising a semicon-ductor element, conductor leads which are in electrical connection with contact pads on the semiconductor element and an envelope of synthetic resin in which the semicon-ductor element, its electrical connections and part of the conductor leads are accommodated, said envelope com-prising an inner encapsulation of a sintered powder coating of an epoxy resin, which protects the semiconductor element and its electrical connections against ambient influences, and a envelope part of foamed thermoplastic synthetic resin which is injection moulded around said inner encapsulation and determines at least part of the outer shape of the envelope.
2. A semiconductor device as claimed in Claim 1, in which the thermoplastic synthetic resin is one of the materials polypropene and polyphenylene sulphide and the foaming agent is azodicarbonamide.
3. A semiconductor device as claimed in Claims 1 or 2, in which the thermoplastic synthetic resin consists of a polyamide foamed with a blowing agent containing zinc carbonate as its main constituent.
4. A method of enveloping a semiconductor device, characterized in that a semiconductor element which is connected electrically to connection conductors is provided with an encapsulation protecting against ambient influences, after which the encapsulated semiconductor element is pro-vided in a mould having a cavity determining the outer shape of the envelope, and that the mould is moved with respect to the discharge openings of an injection moulding device, in which first a wall part of the mould shuts off the dis-charge openings, then a feed opening of the mould is positioned before the discharge opening, and a mixture of foamable thermoplastic material and a blowing agent is injected in the mould cavity and furthermore a wall part of the mould shuts off again the discharge opening, and the enveloped semiconductor device is taken out of the mould after cooling the foamed thermoplastic material.
CA296,495A 1977-02-08 1978-02-08 Semiconductor device and method of enveloping the semiconductor device Expired CA1093704A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL7701284A NL7701284A (en) 1977-02-08 1977-02-08 Encapsulating transistors using epoxide! fluidised bed - producing inner protection which is encapsulated using injected foam thermoplastic inside mould (BE 7.8.78)
NL7701283 1977-02-08
NL7701284 1977-02-08
NL7701283A NL7701283A (en) 1977-02-08 1977-02-08 PROCESS FOR THE MANUFACTURE OF WHOLLY OR PARTLY OF FOAMED THERMOPLASTIC MATERIALS, OBJECTS MANUFACTURED IN ACCORDANCE WITH THIS PROCEDURE AND DEVICE FOR PERFORMING THE PROCEDURE.

Publications (1)

Publication Number Publication Date
CA1093704A true CA1093704A (en) 1981-01-13

Family

ID=26645284

Family Applications (1)

Application Number Title Priority Date Filing Date
CA296,495A Expired CA1093704A (en) 1977-02-08 1978-02-08 Semiconductor device and method of enveloping the semiconductor device

Country Status (12)

Country Link
JP (1) JPS53112063A (en)
AR (1) AR214553A1 (en)
AT (1) ATA87478A (en)
AU (1) AU513092B2 (en)
BR (1) BR7800732A (en)
CA (1) CA1093704A (en)
DE (1) DE2804956A1 (en)
ES (1) ES466679A1 (en)
FR (1) FR2379910A1 (en)
GB (1) GB1594892A (en)
IT (1) IT1092425B (en)
SE (1) SE7801325L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5520863A (en) * 1992-09-17 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Method of making IC card

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930760A1 (en) * 1979-07-28 1981-02-12 Itt Ind Gmbh Deutsche METHOD FOR COATING SEMICONDUCTOR COMPONENTS BY INJECTION MOLDING
DE3019239A1 (en) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Semiconductor encapsulation with layers of differing hardness layer fo - has semiconductor embedded in second layer of soft material for protection against external effects and degradation
US4460537A (en) * 1982-07-26 1984-07-17 Motorola, Inc. Slot transfer molding apparatus and methods
JPS63112923U (en) * 1987-01-16 1988-07-20
DE3922038A1 (en) * 1989-07-05 1991-01-17 Bayer Ag USE OF POLYARYL SULFIDES FOR PRODUCING A HIGH-TEMPERATURE-RESISTANT TSG FOAM, METHOD FOR PRODUCING THIS FOAM AND MOLDING OBTAIN THEREFORE AVAILABLE
US6046076A (en) * 1994-12-29 2000-04-04 Tessera, Inc. Vacuum dispense method for dispensing an encapsulant and machine therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5520863A (en) * 1992-09-17 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Method of making IC card

Also Published As

Publication number Publication date
IT1092425B (en) 1985-07-12
AU513092B2 (en) 1980-11-13
IT7819995A0 (en) 1978-02-03
AU3303878A (en) 1979-08-16
JPS53112063A (en) 1978-09-30
ES466679A1 (en) 1979-07-01
SE7801325L (en) 1978-08-09
GB1594892A (en) 1981-08-05
JPS5722420B2 (en) 1982-05-13
BR7800732A (en) 1978-10-10
FR2379910A1 (en) 1978-09-01
FR2379910B1 (en) 1984-05-04
DE2804956A1 (en) 1978-08-10
AR214553A1 (en) 1979-06-29
ATA87478A (en) 1982-07-15

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