CA1089571A - Contacting structure on a semiconductor arrangement - Google Patents
Contacting structure on a semiconductor arrangementInfo
- Publication number
- CA1089571A CA1089571A CA278,081A CA278081A CA1089571A CA 1089571 A CA1089571 A CA 1089571A CA 278081 A CA278081 A CA 278081A CA 1089571 A CA1089571 A CA 1089571A
- Authority
- CA
- Canada
- Prior art keywords
- arrangement
- zone
- layer
- gallium arsenide
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614163A FR2351504A1 (fr) | 1976-05-11 | 1976-05-11 | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
| FR7614163 | 1976-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1089571A true CA1089571A (en) | 1980-11-11 |
Family
ID=9172979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA278,081A Expired CA1089571A (en) | 1976-05-11 | 1977-05-10 | Contacting structure on a semiconductor arrangement |
Country Status (5)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
| JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
| DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
| JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
| DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
| CN116978999B (zh) * | 2023-09-22 | 2024-01-02 | 南昌凯捷半导体科技有限公司 | 一种电流限域Micro-LED芯片及其制作方法 |
-
1976
- 1976-05-11 FR FR7614163A patent/FR2351504A1/fr active Granted
-
1977
- 1977-05-09 GB GB19413/77A patent/GB1545425A/en not_active Expired
- 1977-05-10 CA CA278,081A patent/CA1089571A/en not_active Expired
- 1977-05-11 DE DE19772721114 patent/DE2721114A1/de not_active Withdrawn
- 1977-05-11 JP JP5419777A patent/JPS52137280A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2721114A1 (de) | 1977-11-24 |
| JPS52137280A (en) | 1977-11-16 |
| GB1545425A (en) | 1979-05-10 |
| FR2351504A1 (fr) | 1977-12-09 |
| FR2351504B1 (US20100012521A1-20100121-C00001.png) | 1980-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19971112 |