CA1088664A - Fabrication of semiconductor devices utilizing ion implantation - Google Patents
Fabrication of semiconductor devices utilizing ion implantationInfo
- Publication number
- CA1088664A CA1088664A CA262,776A CA262776A CA1088664A CA 1088664 A CA1088664 A CA 1088664A CA 262776 A CA262776 A CA 262776A CA 1088664 A CA1088664 A CA 1088664A
- Authority
- CA
- Canada
- Prior art keywords
- region
- layer
- ions
- implanting
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 238000005468 ion implantation Methods 0.000 title description 21
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000002019 doping agent Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 81
- 229910052710 silicon Inorganic materials 0.000 claims description 81
- 239000010703 silicon Substances 0.000 claims description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 77
- 150000002500 ions Chemical class 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000377 silicon dioxide Substances 0.000 claims description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims description 37
- 238000000137 annealing Methods 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 14
- -1 boron ions Chemical class 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 108010014172 Factor V Proteins 0.000 claims description 2
- 210000000188 diaphragm Anatomy 0.000 claims 18
- 230000000149 penetrating effect Effects 0.000 claims 4
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 88
- 238000009792 diffusion process Methods 0.000 description 27
- 125000004429 atom Chemical group 0.000 description 19
- 230000000694 effects Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 230000006355 external stress Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000866 electrolytic etching Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000026683 transduction Effects 0.000 description 2
- 238000010361 transduction Methods 0.000 description 2
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Acoustics & Sound (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Signal Processing (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61986675A | 1975-10-06 | 1975-10-06 | |
| US619,866 | 1975-10-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1088664A true CA1088664A (en) | 1980-10-28 |
Family
ID=24483643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA262,776A Expired CA1088664A (en) | 1975-10-06 | 1976-10-05 | Fabrication of semiconductor devices utilizing ion implantation |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2844459A1 (de) * | 1978-10-12 | 1980-04-24 | Wacker Chemie Gmbh | Verfahren zum erhoehen des schuettgewichts von siliciumdioxyd und eine verwendung des erfindungsgemaess behandelten siliciumdioxyds |
| JPS55102277A (en) * | 1979-01-29 | 1980-08-05 | Toshiba Corp | Semiconductor pressure converter |
| JPS55112864U (US20030199744A1-20031023-C00003.png) * | 1979-02-02 | 1980-08-08 | ||
| JPS59117271A (ja) * | 1982-12-24 | 1984-07-06 | Hitachi Ltd | 圧力感知素子を有する半導体装置とその製造法 |
| JPS59136977A (ja) * | 1983-01-26 | 1984-08-06 | Hitachi Ltd | 圧力感知半導体装置とその製造法 |
| JP3344138B2 (ja) * | 1995-01-30 | 2002-11-11 | 株式会社日立製作所 | 半導体複合センサ |
| US6056888A (en) * | 1999-04-19 | 2000-05-02 | Motorola, Inc. | Electronic component and method of manufacture |
| DE102011006332A1 (de) | 2011-03-29 | 2012-10-04 | Robert Bosch Gmbh | Verfahren zum Erzeugen von monokristallinen Piezowiderständen |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3819431A (en) * | 1971-10-05 | 1974-06-25 | Kulite Semiconductor Products | Method of making transducers employing integral protective coatings and supports |
| GB1399988A (en) * | 1972-10-02 | 1975-07-02 | Motorola Inc | Silicon pressure sensor |
| GB1362616A (en) * | 1973-03-21 | 1974-08-07 | Welwyn Electric Ltd | Semiconductor strain measuring device |
| US3902926A (en) * | 1974-02-21 | 1975-09-02 | Signetics Corp | Method of making an ion implanted resistor |
-
1976
- 1976-10-02 DE DE19762644638 patent/DE2644638A1/de active Granted
- 1976-10-05 FR FR7629945A patent/FR2327528A1/fr active Granted
- 1976-10-05 SE SE7611020A patent/SE414096B/xx not_active IP Right Cessation
- 1976-10-05 CA CA262,776A patent/CA1088664A/en not_active Expired
- 1976-10-06 IT IT5161176A patent/IT1073874B/it active
- 1976-10-06 GB GB4138876A patent/GB1558815A/en not_active Expired
- 1976-10-06 JP JP11947576A patent/JPS6032993B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6032993B2 (ja) | 1985-07-31 |
| DE2644638A1 (de) | 1977-04-07 |
| DE2644638C2 (US20030199744A1-20031023-C00003.png) | 1988-01-21 |
| SE414096B (sv) | 1980-07-07 |
| GB1558815A (en) | 1980-01-09 |
| FR2327528A1 (fr) | 1977-05-06 |
| JPS5245986A (en) | 1977-04-12 |
| SE7611020L (sv) | 1977-04-07 |
| FR2327528B1 (US20030199744A1-20031023-C00003.png) | 1982-05-21 |
| IT1073874B (it) | 1985-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |