CA1080589A - Method for producing single crystal gadolinium gallium - Google Patents

Method for producing single crystal gadolinium gallium

Info

Publication number
CA1080589A
CA1080589A CA280,811A CA280811A CA1080589A CA 1080589 A CA1080589 A CA 1080589A CA 280811 A CA280811 A CA 280811A CA 1080589 A CA1080589 A CA 1080589A
Authority
CA
Canada
Prior art keywords
melt
calcium
ppm
metal ion
unicrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA280,811A
Other languages
English (en)
French (fr)
Inventor
Charles D. Brandle (Jr.)
John B. Hassell (Jr.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Application granted granted Critical
Publication of CA1080589A publication Critical patent/CA1080589A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA280,811A 1976-06-24 1977-06-17 Method for producing single crystal gadolinium gallium Expired CA1080589A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69946076A 1976-06-24 1976-06-24

Publications (1)

Publication Number Publication Date
CA1080589A true CA1080589A (en) 1980-07-01

Family

ID=24809427

Family Applications (1)

Application Number Title Priority Date Filing Date
CA280,811A Expired CA1080589A (en) 1976-06-24 1977-06-17 Method for producing single crystal gadolinium gallium

Country Status (7)

Country Link
JP (1) JPS535100A (sv)
CA (1) CA1080589A (sv)
CH (1) CH603236A5 (sv)
DE (1) DE2728314C3 (sv)
FR (1) FR2355560A1 (sv)
GB (1) GB1565407A (sv)
NL (1) NL187587C (sv)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
JPS59140177U (ja) * 1983-03-07 1984-09-19 株式会社マキタ電機製作所 釘打ち機における釘ベルトマガジン
JPH0540939Y2 (sv) * 1986-04-04 1993-10-18
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2434251C2 (de) * 1974-07-17 1982-08-26 Philips Patentverwaltung Gmbh, 2000 Hamburg Einkristall auf der Basis von Gallium- Granat

Also Published As

Publication number Publication date
DE2728314A1 (de) 1978-02-02
JPS5648480B2 (sv) 1981-11-16
CH603236A5 (sv) 1978-08-15
NL187587C (nl) 1991-11-18
DE2728314C3 (de) 1982-03-25
NL7706980A (nl) 1977-12-28
FR2355560B1 (sv) 1983-01-21
DE2728314B2 (de) 1981-05-07
JPS535100A (en) 1978-01-18
NL187587B (nl) 1991-06-17
FR2355560A1 (fr) 1978-01-20
GB1565407A (en) 1980-04-23

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