CA1073117A - Process and apparatus for the preparation of semiconductor-grade silicon - Google Patents

Process and apparatus for the preparation of semiconductor-grade silicon

Info

Publication number
CA1073117A
CA1073117A CA280,254A CA280254A CA1073117A CA 1073117 A CA1073117 A CA 1073117A CA 280254 A CA280254 A CA 280254A CA 1073117 A CA1073117 A CA 1073117A
Authority
CA
Canada
Prior art keywords
hyperpure
silicon
heated
vessel
heat medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA280,254A
Other languages
English (en)
French (fr)
Inventor
Tatsuo Kuratomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Application granted granted Critical
Publication of CA1073117A publication Critical patent/CA1073117A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CA280,254A 1976-06-12 1977-06-10 Process and apparatus for the preparation of semiconductor-grade silicon Expired CA1073117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6822876A JPS52151616A (en) 1976-06-12 1976-06-12 Producing method and apparatus of bar form high purity silicon

Publications (1)

Publication Number Publication Date
CA1073117A true CA1073117A (en) 1980-03-04

Family

ID=13367726

Family Applications (1)

Application Number Title Priority Date Filing Date
CA280,254A Expired CA1073117A (en) 1976-06-12 1977-06-10 Process and apparatus for the preparation of semiconductor-grade silicon

Country Status (4)

Country Link
JP (1) JPS52151616A (de)
CA (1) CA1073117A (de)
DE (1) DE2725574A1 (de)
DK (1) DK257777A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010042869A1 (de) 2010-10-25 2012-04-26 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinen Siliciumstäben
DE102014201893A1 (de) 2014-02-03 2015-08-06 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium

Also Published As

Publication number Publication date
DK257777A (da) 1977-12-13
DE2725574A1 (de) 1977-12-22
JPS5535324B2 (de) 1980-09-12
JPS52151616A (en) 1977-12-16

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Legal Events

Date Code Title Description
MKEX Expiry