JPS5535324B2 - - Google Patents
Info
- Publication number
- JPS5535324B2 JPS5535324B2 JP6822876A JP6822876A JPS5535324B2 JP S5535324 B2 JPS5535324 B2 JP S5535324B2 JP 6822876 A JP6822876 A JP 6822876A JP 6822876 A JP6822876 A JP 6822876A JP S5535324 B2 JPS5535324 B2 JP S5535324B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6822876A JPS52151616A (en) | 1976-06-12 | 1976-06-12 | Producing method and apparatus of bar form high purity silicon |
| DE19772725574 DE2725574A1 (de) | 1976-06-12 | 1977-06-07 | Verfahren und vorrichtung zur herstellung von silizium in halbleiter- qualitaet |
| DK257777A DK257777A (da) | 1976-06-12 | 1977-06-10 | Fremgangsmade og apparat til fremstilling af siliciumlegemer |
| CA280,254A CA1073117A (en) | 1976-06-12 | 1977-06-10 | Process and apparatus for the preparation of semiconductor-grade silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6822876A JPS52151616A (en) | 1976-06-12 | 1976-06-12 | Producing method and apparatus of bar form high purity silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52151616A JPS52151616A (en) | 1977-12-16 |
| JPS5535324B2 true JPS5535324B2 (de) | 1980-09-12 |
Family
ID=13367726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6822876A Granted JPS52151616A (en) | 1976-06-12 | 1976-06-12 | Producing method and apparatus of bar form high purity silicon |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS52151616A (de) |
| CA (1) | CA1073117A (de) |
| DE (1) | DE2725574A1 (de) |
| DK (1) | DK257777A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010042869A1 (de) | 2010-10-25 | 2012-04-26 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinen Siliciumstäben |
| DE102014201893A1 (de) | 2014-02-03 | 2015-08-06 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
-
1976
- 1976-06-12 JP JP6822876A patent/JPS52151616A/ja active Granted
-
1977
- 1977-06-07 DE DE19772725574 patent/DE2725574A1/de active Pending
- 1977-06-10 DK DK257777A patent/DK257777A/da not_active Application Discontinuation
- 1977-06-10 CA CA280,254A patent/CA1073117A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52151616A (en) | 1977-12-16 |
| DK257777A (da) | 1977-12-13 |
| DE2725574A1 (de) | 1977-12-22 |
| CA1073117A (en) | 1980-03-04 |