JPS52151616A - Producing method and apparatus of bar form high purity silicon - Google Patents

Producing method and apparatus of bar form high purity silicon

Info

Publication number
JPS52151616A
JPS52151616A JP6822876A JP6822876A JPS52151616A JP S52151616 A JPS52151616 A JP S52151616A JP 6822876 A JP6822876 A JP 6822876A JP 6822876 A JP6822876 A JP 6822876A JP S52151616 A JPS52151616 A JP S52151616A
Authority
JP
Japan
Prior art keywords
high purity
producing method
form high
purity silicon
bar form
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6822876A
Other languages
Japanese (ja)
Other versions
JPS5535324B2 (en
Inventor
Tatsurou Kuratomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP6822876A priority Critical patent/JPS52151616A/en
Priority to DE19772725574 priority patent/DE2725574A1/en
Priority to DK257777A priority patent/DK257777A/en
Priority to CA280,254A priority patent/CA1073117A/en
Publication of JPS52151616A publication Critical patent/JPS52151616A/en
Publication of JPS5535324B2 publication Critical patent/JPS5535324B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
JP6822876A 1976-06-12 1976-06-12 Producing method and apparatus of bar form high purity silicon Granted JPS52151616A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6822876A JPS52151616A (en) 1976-06-12 1976-06-12 Producing method and apparatus of bar form high purity silicon
DE19772725574 DE2725574A1 (en) 1976-06-12 1977-06-07 Silicon rod with very high purity for semiconductors - made by chemical vapour deposition onto silicon substrate
DK257777A DK257777A (en) 1976-06-12 1977-06-10 METHOD AND APPARATUS FOR THE MANUFACTURE OF SILICUES
CA280,254A CA1073117A (en) 1976-06-12 1977-06-10 Process and apparatus for the preparation of semiconductor-grade silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6822876A JPS52151616A (en) 1976-06-12 1976-06-12 Producing method and apparatus of bar form high purity silicon

Publications (2)

Publication Number Publication Date
JPS52151616A true JPS52151616A (en) 1977-12-16
JPS5535324B2 JPS5535324B2 (en) 1980-09-12

Family

ID=13367726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6822876A Granted JPS52151616A (en) 1976-06-12 1976-06-12 Producing method and apparatus of bar form high purity silicon

Country Status (4)

Country Link
JP (1) JPS52151616A (en)
CA (1) CA1073117A (en)
DE (1) DE2725574A1 (en)
DK (1) DK257777A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010042869A1 (en) 2010-10-25 2012-04-26 Wacker Chemie Ag Process for the production of polycrystalline silicon rods
DE102014201893A1 (en) 2014-02-03 2015-08-06 Wacker Chemie Ag Process for producing polycrystalline silicon

Also Published As

Publication number Publication date
DK257777A (en) 1977-12-13
JPS5535324B2 (en) 1980-09-12
DE2725574A1 (en) 1977-12-22
CA1073117A (en) 1980-03-04

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