CA1070028A - Method of producing a semiconductor arrangement - Google Patents

Method of producing a semiconductor arrangement

Info

Publication number
CA1070028A
CA1070028A CA229,648A CA229648A CA1070028A CA 1070028 A CA1070028 A CA 1070028A CA 229648 A CA229648 A CA 229648A CA 1070028 A CA1070028 A CA 1070028A
Authority
CA
Canada
Prior art keywords
layer
silicon
silicon nitride
doping
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA229,648A
Other languages
English (en)
French (fr)
Other versions
CA229648S (en
Inventor
Jurgen Graul
Helmuth Murrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742435905 external-priority patent/DE2435905C3/de
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1070028A publication Critical patent/CA1070028A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H10P50/283—
    • H10P76/40—
    • H10P95/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
CA229,648A 1974-07-25 1975-06-18 Method of producing a semiconductor arrangement Expired CA1070028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742435905 DE2435905C3 (de) 1974-07-25 Verfahren zum Herstellen einer Halbleiteranordnung

Publications (1)

Publication Number Publication Date
CA1070028A true CA1070028A (en) 1980-01-15

Family

ID=5921549

Family Applications (1)

Application Number Title Priority Date Filing Date
CA229,648A Expired CA1070028A (en) 1974-07-25 1975-06-18 Method of producing a semiconductor arrangement

Country Status (6)

Country Link
US (1) US3963524A (OSRAM)
JP (1) JPS5140773A (OSRAM)
CA (1) CA1070028A (OSRAM)
FR (1) FR2280201A1 (OSRAM)
GB (1) GB1492447A (OSRAM)
IT (1) IT1039921B (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143455A (en) * 1976-03-11 1979-03-13 Siemens Aktiengesellschaft Method of producing a semiconductor component
JPS5367383A (en) * 1976-08-08 1978-06-15 Fairchild Camera Instr Co Method of producing small ic implantation logic semiconductor
JPS6035818B2 (ja) * 1976-09-22 1985-08-16 日本電気株式会社 半導体装置の製造方法
US4135954A (en) * 1977-07-12 1979-01-23 International Business Machines Corporation Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
JPS6028135B2 (ja) * 1979-05-18 1985-07-03 富士通株式会社 半導体装置の製造方法
JPS58127374A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体装置の製造方法
JPS58108737A (ja) * 1982-11-15 1983-06-28 Nec Corp 半導体装置の製造方法
IT1231913B (it) * 1987-10-23 1992-01-15 Sgs Microelettronica Spa Procedimento di fabbricazione di transistori ad alta frequenza.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits

Also Published As

Publication number Publication date
FR2280201B1 (OSRAM) 1983-03-18
GB1492447A (en) 1977-11-16
JPS5140773A (en) 1976-04-05
DE2435905B2 (de) 1976-08-26
US3963524A (en) 1976-06-15
FR2280201A1 (fr) 1976-02-20
IT1039921B (it) 1979-12-10
DE2435905A1 (de) 1976-02-05

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Legal Events

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