CA1058754A - Minimum pitch mosfet decoder circuit configuration - Google Patents
Minimum pitch mosfet decoder circuit configurationInfo
- Publication number
- CA1058754A CA1058754A CA239,231A CA239231A CA1058754A CA 1058754 A CA1058754 A CA 1058754A CA 239231 A CA239231 A CA 239231A CA 1058754 A CA1058754 A CA 1058754A
- Authority
- CA
- Canada
- Prior art keywords
- address
- array
- complement
- decoder
- array select
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims abstract description 44
- 230000001965 increasing effect Effects 0.000 claims abstract description 13
- 230000002708 enhancing effect Effects 0.000 claims abstract 2
- 230000000295 complement effect Effects 0.000 claims description 90
- 238000011010 flushing procedure Methods 0.000 claims description 9
- 230000003071 parasitic effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 36
- 238000010586 diagram Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- BSFODEXXVBBYOC-UHFFFAOYSA-N 8-[4-(dimethylamino)butan-2-ylamino]quinolin-6-ol Chemical compound C1=CN=C2C(NC(CCN(C)C)C)=CC(O)=CC2=C1 BSFODEXXVBBYOC-UHFFFAOYSA-N 0.000 description 1
- 108010027644 Complement C9 Proteins 0.000 description 1
- 241001362574 Decodes Species 0.000 description 1
- SLZWEMYSYKOWCG-UHFFFAOYSA-N Etacelasil Chemical compound COCCO[Si](CCCl)(OCCOC)OCCOC SLZWEMYSYKOWCG-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US535748A US3909808A (en) | 1974-12-23 | 1974-12-23 | Minimum pitch mosfet decoder circuit configuration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1058754A true CA1058754A (en) | 1979-07-17 |
Family
ID=24135594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA239,231A Expired CA1058754A (en) | 1974-12-23 | 1975-11-04 | Minimum pitch mosfet decoder circuit configuration |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3909808A (OSRAM) |
| JP (1) | JPS5516336B2 (OSRAM) |
| BE (1) | BE835653A (OSRAM) |
| BR (1) | BR7508618A (OSRAM) |
| CA (1) | CA1058754A (OSRAM) |
| CH (1) | CH594319A5 (OSRAM) |
| FR (1) | FR2296308A1 (OSRAM) |
| GB (1) | GB1522638A (OSRAM) |
| IT (1) | IT1049900B (OSRAM) |
| NL (1) | NL7514624A (OSRAM) |
| SE (1) | SE410246B (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144587A (en) * | 1976-07-22 | 1979-03-13 | Tokyo Shibaura Electric Co., Ltd. | Counting level "1" bits to minimize ROM active elements |
| JPS5352027A (en) * | 1976-10-22 | 1978-05-12 | Mitsubishi Electric Corp | Decoder circuit |
| JPS5833633B2 (ja) * | 1978-08-25 | 1983-07-21 | シャープ株式会社 | Ｍｏｓトランジスタ・デコ−ダ |
| US4200917A (en) * | 1979-03-12 | 1980-04-29 | Motorola, Inc. | Quiet column decoder |
| JPS5847796B2 (ja) * | 1979-05-26 | 1983-10-25 | 富士通株式会社 | 半導体メモリ装置 |
| US4447895A (en) * | 1979-10-04 | 1984-05-08 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
| US4259731A (en) * | 1979-11-14 | 1981-03-31 | Motorola, Inc. | Quiet row selection circuitry |
| JPS5683891A (en) * | 1979-12-13 | 1981-07-08 | Fujitsu Ltd | Semiconductor storage device |
| US4419741A (en) * | 1980-01-28 | 1983-12-06 | Rca Corporation | Read only memory (ROM) having high density memory array with on pitch decoder circuitry |
| IT1135037B (it) * | 1980-01-28 | 1986-08-20 | Rca Corp | Selettore di linee per la decodificazione in passo di linee multiple di ingresso |
| US4287576A (en) * | 1980-03-26 | 1981-09-01 | International Business Machines Corporation | Sense amplifying system for memories with small cells |
| JPS6042554B2 (ja) * | 1980-12-24 | 1985-09-24 | 富士通株式会社 | Ｃｍｏｓメモリデコ−ダ回路 |
| JPS5873097A (ja) * | 1981-10-27 | 1983-05-02 | Nec Corp | デコ−ダ−回路 |
| US4514829A (en) * | 1982-12-30 | 1985-04-30 | International Business Machines Corporation | Word line decoder and driver circuits for high density semiconductor memory |
| JPH0762960B2 (ja) * | 1984-12-28 | 1995-07-05 | 日本電気株式会社 | 半導体回路 |
| US9349738B1 (en) * | 2008-02-04 | 2016-05-24 | Broadcom Corporation | Content addressable memory (CAM) device having substrate array line structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
| US3821715A (en) * | 1973-01-22 | 1974-06-28 | Intel Corp | Memory system for a multi chip digital computer |
-
1974
- 1974-12-23 US US535748A patent/US3909808A/en not_active Expired - Lifetime
-
1975
- 1975-11-04 CA CA239,231A patent/CA1058754A/en not_active Expired
- 1975-11-07 FR FR7534730A patent/FR2296308A1/fr active Granted
- 1975-11-17 BE BE161939A patent/BE835653A/xx not_active IP Right Cessation
- 1975-11-19 GB GB47603/75A patent/GB1522638A/en not_active Expired
- 1975-11-28 IT IT29757/75A patent/IT1049900B/it active
- 1975-12-10 CH CH1601775A patent/CH594319A5/xx not_active IP Right Cessation
- 1975-12-12 JP JP14752375A patent/JPS5516336B2/ja not_active Expired
- 1975-12-16 NL NL7514624A patent/NL7514624A/xx not_active Application Discontinuation
- 1975-12-23 BR BR7508618*A patent/BR7508618A/pt unknown
- 1975-12-23 SE SE7514597A patent/SE410246B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2296308A1 (fr) | 1976-07-23 |
| BE835653A (fr) | 1976-03-16 |
| CH594319A5 (OSRAM) | 1978-01-13 |
| JPS5516336B2 (OSRAM) | 1980-05-01 |
| US3909808A (en) | 1975-09-30 |
| NL7514624A (nl) | 1976-06-25 |
| SE410246B (sv) | 1979-10-01 |
| BR7508618A (pt) | 1976-08-24 |
| SE7514597L (sv) | 1976-06-24 |
| IT1049900B (it) | 1981-02-10 |
| GB1522638A (en) | 1978-08-23 |
| FR2296308B1 (OSRAM) | 1977-12-16 |
| JPS5184537A (OSRAM) | 1976-07-23 |
| DE2557006A1 (de) | 1976-07-08 |
| DE2557006B2 (de) | 1977-02-17 |
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