CA1055818A - Isothermal growth of bubble domain garnet films - Google Patents

Isothermal growth of bubble domain garnet films

Info

Publication number
CA1055818A
CA1055818A CA236,448A CA236448A CA1055818A CA 1055818 A CA1055818 A CA 1055818A CA 236448 A CA236448 A CA 236448A CA 1055818 A CA1055818 A CA 1055818A
Authority
CA
Canada
Prior art keywords
growth
melt
garnet
substrate
orthoferrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA236,448A
Other languages
English (en)
French (fr)
Inventor
Richard A. Ghez
Edward A. Giess
Thomas S. Plaskett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1055818A publication Critical patent/CA1055818A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA236,448A 1974-10-29 1975-09-18 Isothermal growth of bubble domain garnet films Expired CA1055818A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51883174A 1974-10-29 1974-10-29

Publications (1)

Publication Number Publication Date
CA1055818A true CA1055818A (en) 1979-06-05

Family

ID=24065695

Family Applications (1)

Application Number Title Priority Date Filing Date
CA236,448A Expired CA1055818A (en) 1974-10-29 1975-09-18 Isothermal growth of bubble domain garnet films

Country Status (6)

Country Link
JP (1) JPS546033B2 (de)
CA (1) CA1055818A (de)
DE (1) DE2541140A1 (de)
FR (1) FR2289235A1 (de)
GB (1) GB1463648A (de)
IT (1) IT1042727B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154262U (ja) * 1982-04-12 1983-10-15 株式会社日立製作所 エレベ−タ−操作盤
JPS60124724A (ja) * 1983-12-12 1985-07-03 Hitachi Ltd タッチパネル入力装置
JPS60167024A (ja) * 1984-02-08 1985-08-30 Omron Tateisi Electronics Co タツチパネルを備えたキ−入力装置
DE3731010A1 (de) * 1987-09-16 1989-03-30 Telefunken Electronic Gmbh Verfahren zur fluessigphasenepitaxie
JPH01320520A (ja) * 1988-06-23 1989-12-26 Toshiba Corp タッチスクリーン装置の入力制御方法
JPH07168669A (ja) * 1994-12-02 1995-07-04 Hitachi Ltd タッチパネル入力装置
DE10241703A1 (de) * 2002-09-09 2004-03-18 Vishay Semiconductor Gmbh Reaktor und Verfahren zur Flüssigphasenepitaxie

Also Published As

Publication number Publication date
FR2289235B1 (de) 1977-07-22
JPS546033B2 (de) 1979-03-23
DE2541140A1 (de) 1976-05-13
JPS5165085A (de) 1976-06-05
IT1042727B (it) 1980-01-30
FR2289235A1 (fr) 1976-05-28
GB1463648A (en) 1977-02-02

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