JPS546033B2 - - Google Patents
Info
- Publication number
- JPS546033B2 JPS546033B2 JP12333975A JP12333975A JPS546033B2 JP S546033 B2 JPS546033 B2 JP S546033B2 JP 12333975 A JP12333975 A JP 12333975A JP 12333975 A JP12333975 A JP 12333975A JP S546033 B2 JPS546033 B2 JP S546033B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51883174A | 1974-10-29 | 1974-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5165085A JPS5165085A (de) | 1976-06-05 |
| JPS546033B2 true JPS546033B2 (de) | 1979-03-23 |
Family
ID=24065695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12333975A Expired JPS546033B2 (de) | 1974-10-29 | 1975-10-15 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS546033B2 (de) |
| CA (1) | CA1055818A (de) |
| DE (1) | DE2541140A1 (de) |
| FR (1) | FR2289235A1 (de) |
| GB (1) | GB1463648A (de) |
| IT (1) | IT1042727B (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0111649Y2 (de) * | 1982-04-12 | 1989-04-05 | ||
| JPH01320520A (ja) * | 1988-06-23 | 1989-12-26 | Toshiba Corp | タッチスクリーン装置の入力制御方法 |
| JPH0447847B2 (de) * | 1983-12-12 | 1992-08-05 | Hitachi Ltd | |
| JPH0552527B2 (de) * | 1984-02-08 | 1993-08-05 | Omron Tateisi Electronics Co | |
| JPH07168669A (ja) * | 1994-12-02 | 1995-07-04 | Hitachi Ltd | タッチパネル入力装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3731010A1 (de) * | 1987-09-16 | 1989-03-30 | Telefunken Electronic Gmbh | Verfahren zur fluessigphasenepitaxie |
| DE10241703A1 (de) * | 2002-09-09 | 2004-03-18 | Vishay Semiconductor Gmbh | Reaktor und Verfahren zur Flüssigphasenepitaxie |
-
1975
- 1975-05-23 GB GB2286875A patent/GB1463648A/en not_active Expired
- 1975-07-03 FR FR7521482A patent/FR2289235A1/fr active Granted
- 1975-09-16 DE DE19752541140 patent/DE2541140A1/de not_active Withdrawn
- 1975-09-18 CA CA236,448A patent/CA1055818A/en not_active Expired
- 1975-09-23 IT IT27532/75A patent/IT1042727B/it active
- 1975-10-15 JP JP12333975A patent/JPS546033B2/ja not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0111649Y2 (de) * | 1982-04-12 | 1989-04-05 | ||
| JPH0447847B2 (de) * | 1983-12-12 | 1992-08-05 | Hitachi Ltd | |
| JPH0552527B2 (de) * | 1984-02-08 | 1993-08-05 | Omron Tateisi Electronics Co | |
| JPH01320520A (ja) * | 1988-06-23 | 1989-12-26 | Toshiba Corp | タッチスクリーン装置の入力制御方法 |
| JPH07168669A (ja) * | 1994-12-02 | 1995-07-04 | Hitachi Ltd | タッチパネル入力装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5165085A (de) | 1976-06-05 |
| GB1463648A (en) | 1977-02-02 |
| FR2289235A1 (fr) | 1976-05-28 |
| FR2289235B1 (de) | 1977-07-22 |
| IT1042727B (it) | 1980-01-30 |
| CA1055818A (en) | 1979-06-05 |
| DE2541140A1 (de) | 1976-05-13 |