CA1040319A - Bipolar logic circuit - Google Patents
Bipolar logic circuitInfo
- Publication number
- CA1040319A CA1040319A CA236,643A CA236643A CA1040319A CA 1040319 A CA1040319 A CA 1040319A CA 236643 A CA236643 A CA 236643A CA 1040319 A CA1040319 A CA 1040319A
- Authority
- CA
- Canada
- Prior art keywords
- doped
- transistor
- zone
- epitaxial layer
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 230000002730 additional effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003334 potential effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742446649 DE2446649A1 (de) | 1974-09-30 | 1974-09-30 | Bipolare logikschaltung |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1040319A true CA1040319A (en) | 1978-10-10 |
Family
ID=5927133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA236,643A Expired CA1040319A (en) | 1974-09-30 | 1975-09-29 | Bipolar logic circuit |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5910068B2 (enrdf_load_stackoverflow) |
BE (1) | BE833958A (enrdf_load_stackoverflow) |
CA (1) | CA1040319A (enrdf_load_stackoverflow) |
DE (1) | DE2446649A1 (enrdf_load_stackoverflow) |
FR (1) | FR2286557A1 (enrdf_load_stackoverflow) |
GB (1) | GB1531735A (enrdf_load_stackoverflow) |
IT (1) | IT1042857B (enrdf_load_stackoverflow) |
NL (1) | NL7511516A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2509530C2 (de) * | 1975-03-05 | 1985-05-23 | Ibm Deutschland Gmbh, 7000 Stuttgart | Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren |
DE2652103C2 (de) * | 1976-11-16 | 1982-10-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung |
US4199776A (en) * | 1978-08-24 | 1980-04-22 | Rca Corporation | Integrated injection logic with floating reinjectors |
-
1974
- 1974-09-30 DE DE19742446649 patent/DE2446649A1/de not_active Ceased
-
1975
- 1975-09-11 GB GB37352/75A patent/GB1531735A/en not_active Expired
- 1975-09-25 IT IT27631/75A patent/IT1042857B/it active
- 1975-09-26 FR FR7529564A patent/FR2286557A1/fr active Granted
- 1975-09-29 CA CA236,643A patent/CA1040319A/en not_active Expired
- 1975-09-29 BE BE160491A patent/BE833958A/xx unknown
- 1975-09-30 NL NL7511516A patent/NL7511516A/xx not_active Application Discontinuation
- 1975-09-30 JP JP50118224A patent/JPS5910068B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2446649A1 (de) | 1976-04-15 |
FR2286557B1 (enrdf_load_stackoverflow) | 1980-04-18 |
FR2286557A1 (fr) | 1976-04-23 |
JPS5910068B2 (ja) | 1984-03-06 |
GB1531735A (en) | 1978-11-08 |
IT1042857B (it) | 1980-01-30 |
NL7511516A (nl) | 1976-04-01 |
JPS5161260A (enrdf_load_stackoverflow) | 1976-05-27 |
BE833958A (fr) | 1976-01-16 |
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