CA1037150A - Diode electroluminescente a emission verte - Google Patents
Diode electroluminescente a emission verteInfo
- Publication number
- CA1037150A CA1037150A CA244,104A CA244104A CA1037150A CA 1037150 A CA1037150 A CA 1037150A CA 244104 A CA244104 A CA 244104A CA 1037150 A CA1037150 A CA 1037150A
- Authority
- CA
- Canada
- Prior art keywords
- light emitting
- emitting diode
- green light
- type layer
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910005540 GaP Inorganic materials 0.000 claims abstract description 19
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000011701 zinc Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 239000005864 Sulphur Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000370 acceptor Substances 0.000 description 22
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 230000008016 vaporization Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1222875A JPS551717B2 (fr) | 1975-01-29 | 1975-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1037150A true CA1037150A (fr) | 1978-08-22 |
Family
ID=11799503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA244,104A Expired CA1037150A (fr) | 1975-01-29 | 1976-01-22 | Diode electroluminescente a emission verte |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS551717B2 (fr) |
| CA (1) | CA1037150A (fr) |
| DE (1) | DE2602801A1 (fr) |
| GB (1) | GB1512322A (fr) |
| NL (1) | NL7600820A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4562378A (en) * | 1982-07-08 | 1985-12-31 | Sanyo Electric Co., Ltd. | Gallium phosphide light-emitting diode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE754437A (fr) * | 1969-08-08 | 1971-01-18 | Western Electric Co | Dispositif electroluminescent ameliore |
| US3646406A (en) * | 1970-06-30 | 1972-02-29 | Bell Telephone Labor Inc | Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps |
| FR2297494A1 (fr) * | 1975-01-07 | 1976-08-06 | Radiotechnique Compelec | Procede de realisation de cristaux semiconducteurs a pieges isoelectroniques d'azote et cristaux ainsi fabriques |
-
1975
- 1975-01-29 JP JP1222875A patent/JPS551717B2/ja not_active Expired
-
1976
- 1976-01-21 GB GB233276A patent/GB1512322A/en not_active Expired
- 1976-01-22 CA CA244,104A patent/CA1037150A/fr not_active Expired
- 1976-01-26 DE DE19762602801 patent/DE2602801A1/de not_active Withdrawn
- 1976-01-27 NL NL7600820A patent/NL7600820A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1512322A (en) | 1978-06-01 |
| DE2602801A1 (de) | 1976-08-05 |
| JPS5186988A (fr) | 1976-07-30 |
| NL7600820A (nl) | 1976-08-02 |
| JPS551717B2 (fr) | 1980-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |
Effective date: 19950822 |