CA1012658A - Manufacture of an insulated gate field effect transistor - Google Patents

Manufacture of an insulated gate field effect transistor

Info

Publication number
CA1012658A
CA1012658A CA204,805A CA204805A CA1012658A CA 1012658 A CA1012658 A CA 1012658A CA 204805 A CA204805 A CA 204805A CA 1012658 A CA1012658 A CA 1012658A
Authority
CA
Canada
Prior art keywords
manufacture
field effect
effect transistor
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA204,805A
Other languages
English (en)
Inventor
Andrew G.F. Dingwall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1012658A publication Critical patent/CA1012658A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CA204,805A 1973-08-06 1974-07-15 Manufacture of an insulated gate field effect transistor Expired CA1012658A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38566973A 1973-08-06 1973-08-06

Publications (1)

Publication Number Publication Date
CA1012658A true CA1012658A (en) 1977-06-21

Family

ID=23522380

Family Applications (1)

Application Number Title Priority Date Filing Date
CA204,805A Expired CA1012658A (en) 1973-08-06 1974-07-15 Manufacture of an insulated gate field effect transistor

Country Status (12)

Country Link
US (1) US4069577A (pt)
JP (1) JPS5051276A (pt)
BE (1) BE818547A (pt)
BR (1) BR7406340D0 (pt)
CA (1) CA1012658A (pt)
DE (1) DE2436517A1 (pt)
FR (1) FR2240532B1 (pt)
GB (1) GB1476790A (pt)
IN (1) IN140846B (pt)
IT (1) IT1015392B (pt)
NL (1) NL7410214A (pt)
SE (1) SE7409993L (pt)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075775A (pt) * 1973-11-06 1975-06-21
JPS5918872B2 (ja) * 1973-12-07 1984-05-01 日本電気株式会社 絶縁ゲ−ト型電界効果半導体装置の製法
JPS5293278A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for mos type semiconductor intergrated circuit
JPS52117079A (en) * 1976-03-29 1977-10-01 Oki Electric Ind Co Ltd Preparation of semiconductor device
FR2351502A1 (fr) * 1976-05-14 1977-12-09 Ibm Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees
US4035198A (en) * 1976-06-30 1977-07-12 International Business Machines Corporation Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors
US4095251A (en) * 1976-08-19 1978-06-13 International Business Machines Corporation Field effect transistors and fabrication of integrated circuits containing the transistors
JPS54109784A (en) * 1978-02-16 1979-08-28 Nec Corp Manufacture of semiconductor device
JPS5464480A (en) * 1977-10-31 1979-05-24 Nec Corp Semiconductor device
JPS5848936A (ja) * 1981-09-10 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
US5798291A (en) * 1995-03-20 1998-08-25 Lg Semicon Co., Ltd. Method of making a semiconductor device with recessed source and drain

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691627A (en) * 1970-02-03 1972-09-19 Gen Electric Method of fabricating buried metallic film devices
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US3761327A (en) * 1971-03-19 1973-09-25 Itt Planar silicon gate mos process
NL7113561A (pt) * 1971-10-02 1973-04-04
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure

Also Published As

Publication number Publication date
FR2240532B1 (pt) 1978-08-11
BR7406340D0 (pt) 1975-09-09
SE7409993L (pt) 1975-02-07
AU7206174A (en) 1976-02-12
BE818547A (fr) 1974-12-02
DE2436517A1 (de) 1975-03-06
IN140846B (pt) 1976-12-25
US4069577A (en) 1978-01-24
GB1476790A (en) 1977-06-16
FR2240532A1 (pt) 1975-03-07
JPS5051276A (pt) 1975-05-08
NL7410214A (nl) 1975-02-10
IT1015392B (it) 1977-05-10

Similar Documents

Publication Publication Date Title
CA1024266A (en) Deep depletion insulated gate field effect transistors
CA1001771A (en) Method of mos transistor manufacture and resulting structure
CA965188A (en) Field effect transistor
CA1013866A (en) Process for fabricating insulated gate field effect transistor transistor structure
CA951796A (en) Counter using insulated gate field effect transistors
CA1003121A (en) Field effect transistor
CA1000872A (en) Method of manufacturing of junction field effect transistor
CA972077A (en) High frequency insulated gate field effect transistor for wide frequency band operation
CA1009708A (en) Hysteresis circuits using insulated gate field effect transistors
CA996640A (en) Flip-flop circuits utilizing insulated gate field effect transistors
CA1012658A (en) Manufacture of an insulated gate field effect transistor
CA1017073A (en) Complementary insulated gate field effect transistor structure and process for fabricating the structure
CA999654A (en) Protective circuit for an insulated gate field effect transistor
CA1016665A (en) Field effect transistor
CA913801A (en) Methods of manufacturing insulated gate field effect transistors
CA812444A (en) Manufacture of insulated gate field effect transistors
CA891182A (en) Field-effect transistor of the kind comprising an insulated gate electrode
CA874132A (en) Insulated gate field effect transistors
CA866989A (en) Insulated gate field effect transistors
CA899518A (en) Method of making complementary insulated gate field effect transistors
CA910506A (en) Modification of channel regions in insulated gate field effect transistors
AU486766B2 (en) Semiconductor device including an insulated gate field effect transistor
AU492209B2 (en) Deep depletion insulated gate field effect transistors
CA868640A (en) Field effect transistor having passivated gate insulator
CA848645A (en) Insulated gate field effect transistors