CA1007763A - Implantation of ions into a metal electrode - Google Patents

Implantation of ions into a metal electrode

Info

Publication number
CA1007763A
CA1007763A CA202,285A CA202285A CA1007763A CA 1007763 A CA1007763 A CA 1007763A CA 202285 A CA202285 A CA 202285A CA 1007763 A CA1007763 A CA 1007763A
Authority
CA
Canada
Prior art keywords
implantation
ions
metal electrode
electrode
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA202,285A
Other languages
English (en)
Other versions
CA202285S (en
Inventor
E. Hal Bogardus
Peter P. Peressini
Timothy M. Reith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1007763A publication Critical patent/CA1007763A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
CA202,285A 1973-06-29 1974-06-12 Implantation of ions into a metal electrode Expired CA1007763A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US375278A US3871067A (en) 1973-06-29 1973-06-29 Method of manufacturing a semiconductor device

Publications (1)

Publication Number Publication Date
CA1007763A true CA1007763A (en) 1977-03-29

Family

ID=23480240

Family Applications (1)

Application Number Title Priority Date Filing Date
CA202,285A Expired CA1007763A (en) 1973-06-29 1974-06-12 Implantation of ions into a metal electrode

Country Status (7)

Country Link
US (1) US3871067A (enExample)
JP (1) JPS5324300B2 (enExample)
CA (1) CA1007763A (enExample)
DE (1) DE2422120C3 (enExample)
FR (1) FR2235483B1 (enExample)
GB (1) GB1424959A (enExample)
IT (1) IT1012364B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123562A (en) * 1975-04-21 1976-10-28 Sony Corp Production method of semiconductor device
US4062720A (en) * 1976-08-23 1977-12-13 International Business Machines Corporation Process for forming a ledge-free aluminum-copper-silicon conductor structure
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
JPS5723221A (en) * 1980-07-16 1982-02-06 Mitsubishi Electric Corp Manufacture of semiconductor device
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
GB2107744B (en) * 1981-10-06 1985-07-24 Itt Ind Ltd Making al/si films by ion implantation; integrated circuits
JPS58186967A (ja) * 1982-04-26 1983-11-01 Toshiba Corp 薄膜半導体装置の製造方法
JPH0750696B2 (ja) * 1987-12-14 1995-05-31 三菱電機株式会社 半導体装置の製造方法
JPH0750697B2 (ja) * 1989-02-20 1995-05-31 株式会社東芝 半導体装置の製造方法
KR0161116B1 (ko) * 1995-01-06 1999-02-01 문정환 반도체 장치의 금속층 형성방법
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
US11738813B2 (en) 2016-11-01 2023-08-29 Loc Performance Products, Llc Urethane hybrid agricultural vehicle track
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
BE759058A (enExample) * 1969-11-19 1971-05-17 Philips Nv
US3620851A (en) * 1969-12-04 1971-11-16 William J King Method for making a buried layer semiconductor device
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby

Also Published As

Publication number Publication date
FR2235483B1 (enExample) 1978-11-17
DE2422120C3 (de) 1982-03-25
JPS5024080A (enExample) 1975-03-14
DE2422120A1 (de) 1975-01-23
IT1012364B (it) 1977-03-10
US3871067A (en) 1975-03-18
JPS5324300B2 (enExample) 1978-07-20
GB1424959A (en) 1976-02-11
FR2235483A1 (enExample) 1975-01-24
DE2422120B2 (de) 1981-07-02

Similar Documents

Publication Publication Date Title
CA1032658A (en) Implantation of ions into a metal electrode
AU503458B2 (en) Electrode
CA1027517A (en) Electrode assembly for multipolar electrolytic cells
CA1007763A (en) Implantation of ions into a metal electrode
CA1023035A (en) Level and impurity control for electrode boiler
CA1031723A (en) Powder anode
CA1004358A (en) Auto-resonant acceleration of ions
AU502259B2 (en) Cardiac electrode
CA1015030A (en) Electrochemical electrode structure
CA1032498A (en) Alkali metal chlorate cell having metal electrodes
CA1032893A (en) Metal anode for electrochemical processes
YU120874A (en) Metal anode
CA986184A (en) Ion-selective electrode
SU567573A1 (ru) Неплав щийс электрод
CA1003049A (en) Metal etching process
CA1028229A (en) Treatment of anodes
CA1024784A (en) Electrode for electrical discharge machining
AU508178B2 (en) Chromate cathode
AU490702B2 (en) Endocardial electrode
AU503551B2 (en) Production of metallic lead
AU478442B2 (en) Metal anode assembly
AU487143B2 (en) Longterm electrode for electrolytic processes
AU480228B2 (en) Electrode and method
AU480658B2 (en) Solid state electrode
AU6412774A (en) Longterm electrode for electrolytic processes