CA1005576A - Memory address selection apparatus including isolation circuits - Google Patents

Memory address selection apparatus including isolation circuits

Info

Publication number
CA1005576A
CA1005576A CA159,670A CA159670A CA1005576A CA 1005576 A CA1005576 A CA 1005576A CA 159670 A CA159670 A CA 159670A CA 1005576 A CA1005576 A CA 1005576A
Authority
CA
Canada
Prior art keywords
apparatus including
memory address
address selection
selection apparatus
isolation circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA159,670A
Other languages
English (en)
Other versions
CA159670S (en
Inventor
Brian F. Croxon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Inc
Original Assignee
Honeywell Information Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Inc filed Critical Honeywell Information Systems Inc
Application granted granted Critical
Publication of CA1005576A publication Critical patent/CA1005576A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4082—Address Buffers; level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
CA159,670A 1972-01-03 1972-12-21 Memory address selection apparatus including isolation circuits Expired CA1005576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21477172A 1972-01-03 1972-01-03

Publications (1)

Publication Number Publication Date
CA1005576A true CA1005576A (en) 1977-02-15

Family

ID=22800359

Family Applications (1)

Application Number Title Priority Date Filing Date
CA159,670A Expired CA1005576A (en) 1972-01-03 1972-12-21 Memory address selection apparatus including isolation circuits

Country Status (9)

Country Link
US (1) US3757310A (de)
JP (1) JPS5648916B2 (de)
AU (1) AU465471B2 (de)
CA (1) CA1005576A (de)
DE (1) DE2300186C2 (de)
FR (1) FR2167599B1 (de)
GB (1) GB1417410A (de)
IT (1) IT972275B (de)
NL (1) NL181240C (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757310A (en) * 1972-01-03 1973-09-04 Honeywell Inf Systems Memory address selction apparatus including isolation circuits
US3796893A (en) * 1972-08-28 1974-03-12 Motorola Inc Peripheral circuitry for dynamic mos rams
US3795898A (en) * 1972-11-03 1974-03-05 Advanced Memory Syst Random access read/write semiconductor memory
US3835457A (en) * 1972-12-07 1974-09-10 Motorola Inc Dynamic mos ttl compatible
JPS5643602B2 (de) * 1973-05-08 1981-10-14
US3902082A (en) * 1974-02-11 1975-08-26 Mostek Corp Dynamic data input latch and decoder
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
GB1507178A (en) * 1974-10-30 1978-04-12 Motorola Inc Microprocessor integrated circuit and chip
US4000413A (en) * 1975-05-27 1976-12-28 Intel Corporation Mos-ram
JPS51147223A (en) * 1975-06-13 1976-12-17 Nec Corp Generating circuit of signals of sense amplification difference
US4103349A (en) * 1977-06-16 1978-07-25 Rockwell International Corporation Output address decoder with gating logic for increased speed and less chip area
US4409671A (en) * 1978-09-05 1983-10-11 Motorola, Inc. Data processor having single clock pin
JPS5585141A (en) * 1979-05-24 1980-06-26 Nec Corp Transistor circuit
JPS573429A (en) * 1980-06-06 1982-01-08 Nec Corp Semiconductor circuit
JPS5769335U (de) * 1980-10-14 1982-04-26
US4409675A (en) * 1980-12-22 1983-10-11 Fairchild Camera & Instrument Corporation Address gate for memories to protect stored data, and to simplify memory testing, and method of use thereof
JPS589513B2 (ja) * 1981-08-31 1983-02-21 日本電気株式会社 半導体メモリ選択回路
US4514829A (en) * 1982-12-30 1985-04-30 International Business Machines Corporation Word line decoder and driver circuits for high density semiconductor memory
JPS59210594A (ja) * 1984-05-07 1984-11-29 Hitachi Ltd メモリセル選択方式
JPS6074723A (ja) * 1984-09-03 1985-04-27 Nec Corp 半導体回路
JPS6074724A (ja) * 1984-09-03 1985-04-27 Nec Corp 絶縁ゲ−ト型電界効果トランジスタ回路
JPH07245558A (ja) * 1994-03-03 1995-09-19 Hitachi Ltd 半導体装置の入力回路
JP7071614B2 (ja) 2017-01-27 2022-05-19 ミツミ電機株式会社 振動装置、ウェアラブル端末及び着信通知機能デバイス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624620A (en) * 1969-06-23 1971-11-30 Honeywell Inc Memory address selection circuitry
US3757310A (en) * 1972-01-03 1973-09-04 Honeywell Inf Systems Memory address selction apparatus including isolation circuits

Also Published As

Publication number Publication date
NL181240C (nl) 1987-07-01
JPS5648916B2 (de) 1981-11-18
NL7215794A (de) 1973-07-05
US3757310A (en) 1973-09-04
GB1417410A (en) 1975-12-10
AU4976672A (en) 1974-06-13
DE2300186A1 (de) 1973-07-26
JPS4875133A (de) 1973-10-09
FR2167599B1 (de) 1983-07-22
DE2300186C2 (de) 1982-04-15
AU465471B2 (en) 1975-09-25
FR2167599A1 (de) 1973-08-24
NL181240B (nl) 1987-02-02
IT972275B (it) 1974-05-20

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