CA1001724A - Variable impedance circuit employing an ris field effect transistor - Google Patents

Variable impedance circuit employing an ris field effect transistor

Info

Publication number
CA1001724A
CA1001724A CA196,940A CA196940A CA1001724A CA 1001724 A CA1001724 A CA 1001724A CA 196940 A CA196940 A CA 196940A CA 1001724 A CA1001724 A CA 1001724A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
variable impedance
impedance circuit
circuit employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,940A
Other languages
English (en)
Other versions
CA196940S (en
Inventor
Takaaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1001724A publication Critical patent/CA1001724A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CA196,940A 1973-04-06 1974-04-05 Variable impedance circuit employing an ris field effect transistor Expired CA1001724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (de) 1973-04-06 1973-04-06

Publications (1)

Publication Number Publication Date
CA1001724A true CA1001724A (en) 1976-12-14

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,940A Expired CA1001724A (en) 1973-04-06 1974-04-05 Variable impedance circuit employing an ris field effect transistor

Country Status (7)

Country Link
JP (1) JPS552741B2 (de)
CA (1) CA1001724A (de)
DE (1) DE2416883A1 (de)
FR (1) FR2224877B1 (de)
GB (1) GB1470683A (de)
IT (1) IT1010898B (de)
NL (1) NL7404785A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法
US6703682B2 (en) * 1999-12-22 2004-03-09 Texas Advanced Optoelectronic Solutions, Inc. High sheet MOS resistor method and apparatus

Also Published As

Publication number Publication date
IT1010898B (it) 1977-01-20
FR2224877B1 (de) 1978-03-24
DE2416883A1 (de) 1974-10-17
JPS552741B2 (de) 1980-01-22
JPS49127583A (de) 1974-12-06
GB1470683A (en) 1977-04-21
FR2224877A1 (de) 1974-10-31
NL7404785A (de) 1974-10-08

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