NL7404785A - - Google Patents

Info

Publication number
NL7404785A
NL7404785A NL7404785A NL7404785A NL7404785A NL 7404785 A NL7404785 A NL 7404785A NL 7404785 A NL7404785 A NL 7404785A NL 7404785 A NL7404785 A NL 7404785A NL 7404785 A NL7404785 A NL 7404785A
Authority
NL
Netherlands
Application number
NL7404785A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7404785A publication Critical patent/NL7404785A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
NL7404785A 1973-04-06 1974-04-08 NL7404785A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (de) 1973-04-06 1973-04-06

Publications (1)

Publication Number Publication Date
NL7404785A true NL7404785A (de) 1974-10-08

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7404785A NL7404785A (de) 1973-04-06 1974-04-08

Country Status (7)

Country Link
JP (1) JPS552741B2 (de)
CA (1) CA1001724A (de)
DE (1) DE2416883A1 (de)
FR (1) FR2224877B1 (de)
GB (1) GB1470683A (de)
IT (1) IT1010898B (de)
NL (1) NL7404785A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川 きよ 自動車事故防止装置
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法
US6703682B2 (en) * 1999-12-22 2004-03-09 Texas Advanced Optoelectronic Solutions, Inc. High sheet MOS resistor method and apparatus

Also Published As

Publication number Publication date
JPS49127583A (de) 1974-12-06
CA1001724A (en) 1976-12-14
IT1010898B (it) 1977-01-20
FR2224877B1 (de) 1978-03-24
JPS552741B2 (de) 1980-01-22
DE2416883A1 (de) 1974-10-17
FR2224877A1 (de) 1974-10-31
GB1470683A (en) 1977-04-21

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