IT1010898B - Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris - Google Patents
Circuito ad impendenza variabile impiegante un transistore ad effetto di campo risInfo
- Publication number
- IT1010898B IT1010898B IT4263174A IT4263174A IT1010898B IT 1010898 B IT1010898 B IT 1010898B IT 4263174 A IT4263174 A IT 4263174A IT 4263174 A IT4263174 A IT 4263174A IT 1010898 B IT1010898 B IT 1010898B
- Authority
- IT
- Italy
- Prior art keywords
- impendance
- res
- variable
- circuit
- field effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3920873A JPS552741B2 (de) | 1973-04-06 | 1973-04-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1010898B true IT1010898B (it) | 1977-01-20 |
Family
ID=12546703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT4263174A IT1010898B (it) | 1973-04-06 | 1974-04-03 | Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS552741B2 (de) |
| CA (1) | CA1001724A (de) |
| DE (1) | DE2416883A1 (de) |
| FR (1) | FR2224877B1 (de) |
| GB (1) | GB1470683A (de) |
| IT (1) | IT1010898B (de) |
| NL (1) | NL7404785A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158807A (en) * | 1977-04-25 | 1979-06-19 | Massachusetts Institute Of Technology | Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment |
| JPS58183338A (ja) * | 1982-04-20 | 1983-10-26 | Koki Hisamatsu | ジヤツキ装備車 |
| JPS59167054U (ja) * | 1983-04-23 | 1984-11-08 | 田川 きよ | 自動車事故防止装置 |
| US4602170A (en) * | 1983-09-08 | 1986-07-22 | International Business Machines Corporation | Resistive gate field effect transistor logic family |
| JPS61238549A (ja) * | 1985-04-15 | 1986-10-23 | Tadanao Fujimori | オ−トジヤツキ車とその使用法 |
| US6703682B2 (en) * | 1999-12-22 | 2004-03-09 | Texas Advanced Optoelectronic Solutions, Inc. | High sheet MOS resistor method and apparatus |
-
1973
- 1973-04-06 JP JP3920873A patent/JPS552741B2/ja not_active Expired
-
1974
- 1974-04-02 GB GB1459674A patent/GB1470683A/en not_active Expired
- 1974-04-03 IT IT4263174A patent/IT1010898B/it active
- 1974-04-05 CA CA196,940A patent/CA1001724A/en not_active Expired
- 1974-04-06 DE DE19742416883 patent/DE2416883A1/de not_active Withdrawn
- 1974-04-08 NL NL7404785A patent/NL7404785A/xx unknown
- 1974-04-08 FR FR7412302A patent/FR2224877B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1470683A (en) | 1977-04-21 |
| CA1001724A (en) | 1976-12-14 |
| FR2224877A1 (de) | 1974-10-31 |
| DE2416883A1 (de) | 1974-10-17 |
| JPS552741B2 (de) | 1980-01-22 |
| NL7404785A (de) | 1974-10-08 |
| JPS49127583A (de) | 1974-12-06 |
| FR2224877B1 (de) | 1978-03-24 |
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