JPS552741B2 - - Google Patents

Info

Publication number
JPS552741B2
JPS552741B2 JP3920873A JP3920873A JPS552741B2 JP S552741 B2 JPS552741 B2 JP S552741B2 JP 3920873 A JP3920873 A JP 3920873A JP 3920873 A JP3920873 A JP 3920873A JP S552741 B2 JPS552741 B2 JP S552741B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3920873A
Other languages
Japanese (ja)
Other versions
JPS49127583A (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3920873A priority Critical patent/JPS552741B2/ja
Priority to GB1459674A priority patent/GB1470683A/en
Priority to IT4263174A priority patent/IT1010898B/it
Priority to CA196,940A priority patent/CA1001724A/en
Priority to DE19742416883 priority patent/DE2416883A1/de
Priority to NL7404785A priority patent/NL7404785A/xx
Priority to FR7412302A priority patent/FR2224877B1/fr
Publication of JPS49127583A publication Critical patent/JPS49127583A/ja
Publication of JPS552741B2 publication Critical patent/JPS552741B2/ja
Priority to US06/349,454 priority patent/US4490734A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP3920873A 1972-05-13 1973-04-06 Expired JPS552741B2 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (de) 1973-04-06 1973-04-06
GB1459674A GB1470683A (en) 1973-04-06 1974-04-02 Variable impedance circuits comprising a field effect transistor
IT4263174A IT1010898B (it) 1973-04-06 1974-04-03 Circuito ad impendenza variabile impiegante un transistore ad effetto di campo ris
CA196,940A CA1001724A (en) 1973-04-06 1974-04-05 Variable impedance circuit employing an ris field effect transistor
DE19742416883 DE2416883A1 (de) 1973-04-06 1974-04-06 Isolierschicht-halbleiteranordnung
NL7404785A NL7404785A (de) 1973-04-06 1974-04-08
FR7412302A FR2224877B1 (de) 1973-04-06 1974-04-08
US06/349,454 US4490734A (en) 1972-05-13 1982-02-17 Variable impedance circuit employing an RIS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3920873A JPS552741B2 (de) 1973-04-06 1973-04-06

Publications (2)

Publication Number Publication Date
JPS49127583A JPS49127583A (de) 1974-12-06
JPS552741B2 true JPS552741B2 (de) 1980-01-22

Family

ID=12546703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3920873A Expired JPS552741B2 (de) 1972-05-13 1973-04-06

Country Status (7)

Country Link
JP (1) JPS552741B2 (de)
CA (1) CA1001724A (de)
DE (1) DE2416883A1 (de)
FR (1) FR2224877B1 (de)
GB (1) GB1470683A (de)
IT (1) IT1010898B (de)
NL (1) NL7404785A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158807A (en) * 1977-04-25 1979-06-19 Massachusetts Institute Of Technology Gapped gate charge-flow transistor with a thin film sensor having two modes of conduction within the gapped gate used to sense a property of the ambient environment
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
US6703682B2 (en) * 1999-12-22 2004-03-09 Texas Advanced Optoelectronic Solutions, Inc. High sheet MOS resistor method and apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58183338A (ja) * 1982-04-20 1983-10-26 Koki Hisamatsu ジヤツキ装備車
JPS59167054U (ja) * 1983-04-23 1984-11-08 田川　きよ 自動車事故防止装置
JPS61238549A (ja) * 1985-04-15 1986-10-23 Tadanao Fujimori オ−トジヤツキ車とその使用法

Also Published As

Publication number Publication date
NL7404785A (de) 1974-10-08
JPS49127583A (de) 1974-12-06
CA1001724A (en) 1976-12-14
IT1010898B (it) 1977-01-20
FR2224877B1 (de) 1978-03-24
DE2416883A1 (de) 1974-10-17
FR2224877A1 (de) 1974-10-31
GB1470683A (en) 1977-04-21

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