BRPI0511961A - método para a produção de uma lámina de semicondutor cristalino com um campo elétrico integrado, e lámina de semicondutor cristalino - Google Patents

método para a produção de uma lámina de semicondutor cristalino com um campo elétrico integrado, e lámina de semicondutor cristalino

Info

Publication number
BRPI0511961A
BRPI0511961A BRPI0511961-8A BRPI0511961A BRPI0511961A BR PI0511961 A BRPI0511961 A BR PI0511961A BR PI0511961 A BRPI0511961 A BR PI0511961A BR PI0511961 A BRPI0511961 A BR PI0511961A
Authority
BR
Brazil
Prior art keywords
blade
crystalline semiconductor
electric field
producing
semiconductor blade
Prior art date
Application number
BRPI0511961-8A
Other languages
English (en)
Inventor
Axel Georg Sch Necker
Original Assignee
Rgs Dev B V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rgs Dev B V filed Critical Rgs Dev B V
Publication of BRPI0511961A publication Critical patent/BRPI0511961A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

MéTODO PARA A PRODUçãO DE UMA LáMINA DE SEMICONDUTOR CRISTALINO COM UM CAMPO ELéTRICO INTEGRADO, E, LáMINA DE SEMICONDUTOR CRISTALINO. A invenção descreve um método para a produção de uma lâmina de silício com um transporte alvejado de portador de carga para a transição p-n por meio de um campo elétrico integral (campo de desvio). Pela variação da taxa de cristalização e introdução de uma substância dopante no silício fluido de antemão, um processo de cristalização pode ser executado de tal modo que um gradiente sobre a espessura da lâmina seja produzido no perfil de dopagem no silício. Este gradiente do perfil de dopagem origina um campo elétrico. Com a ajuda de várias técnicas de fundição de lâmina, lâminas adequadas à produção de células solares podem, assim ser produzidas de uma maneira relativamente simples.
BRPI0511961-8A 2004-06-10 2005-06-10 método para a produção de uma lámina de semicondutor cristalino com um campo elétrico integrado, e lámina de semicondutor cristalino BRPI0511961A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1026377A NL1026377C2 (nl) 2004-06-10 2004-06-10 Werkwijze voor het fabriceren van kristallijn-siliciumfolies.
PCT/NL2005/000422 WO2005122287A1 (en) 2004-06-10 2005-06-10 Method for the production of crystalline silicon foils

Publications (1)

Publication Number Publication Date
BRPI0511961A true BRPI0511961A (pt) 2008-01-22

Family

ID=34970454

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0511961-8A BRPI0511961A (pt) 2004-06-10 2005-06-10 método para a produção de uma lámina de semicondutor cristalino com um campo elétrico integrado, e lámina de semicondutor cristalino

Country Status (7)

Country Link
US (1) US20090014840A1 (pt)
EP (1) EP1754264B1 (pt)
JP (1) JP5065896B2 (pt)
AU (1) AU2005253501B2 (pt)
BR (1) BRPI0511961A (pt)
NL (1) NL1026377C2 (pt)
WO (1) WO2005122287A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8603242B2 (en) 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
NL2004209C2 (en) 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
US20110305891A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
JP5848417B1 (ja) * 2014-08-26 2016-01-27 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
EP3251146B1 (en) 2015-01-26 2020-12-02 1366 Technologies Inc. Method for creating a semiconductor wafer having profiled doping

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2830522A1 (de) * 1978-07-12 1980-01-31 Licentia Gmbh Verfahren und vorrichtung zur herstellung von folien, baendern oder platten aus silizium
US4212343A (en) * 1979-03-16 1980-07-15 Allied Chemical Corporation Continuous casting method and apparatus for structurally defined metallic strips
US4236947A (en) * 1979-05-21 1980-12-02 General Electric Company Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon
JPS57132372A (en) * 1981-02-09 1982-08-16 Univ Tohoku Manufacture of p-n junction type thin silicon band
US4554203A (en) 1984-04-09 1985-11-19 Siemens Aktiengesellschaft Method for manufacturing large surface silicon crystal bodies for solar cells, and bodies so produced
JPS61275119A (ja) * 1985-05-28 1986-12-05 Kawasaki Steel Corp シリコンリボンの製造方法
DE3536743C2 (de) 1985-10-15 1994-11-10 Siemens Ag Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen
JPS63199049A (ja) * 1987-02-13 1988-08-17 Sumitomo Electric Ind Ltd 連続結晶成長方法
JPH0218314A (ja) * 1988-07-07 1990-01-22 Hoxan Corp 多結晶シリコンシートの製造方法
US5156978A (en) * 1988-11-15 1992-10-20 Mobil Solar Energy Corporation Method of fabricating solar cells
JP3087186B2 (ja) * 1991-05-21 2000-09-11 エア・ウォーター株式会社 多結晶シリコンシートの製造方法
JP3052158B2 (ja) * 1991-08-07 2000-06-12 大同ほくさん株式会社 キャストリボン法による多結晶シリコンシートの形成方法
JPH06283742A (ja) * 1993-03-29 1994-10-07 Tdk Corp 多結晶シリコン太陽電池及びその製造方法
JPH1154775A (ja) * 1997-08-08 1999-02-26 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜太陽電池の作製方法
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
JP2004538231A (ja) * 2001-08-10 2004-12-24 エバーグリーン ソーラー， インコーポレイテッド 半導体をドーピングするための方法および装置

Also Published As

Publication number Publication date
JP5065896B2 (ja) 2012-11-07
WO2005122287A1 (en) 2005-12-22
EP1754264B1 (en) 2019-08-14
US20090014840A1 (en) 2009-01-15
WO2005122287A9 (en) 2017-12-07
AU2005253501B2 (en) 2010-04-29
AU2005253501A1 (en) 2005-12-22
NL1026377C2 (nl) 2005-12-14
JP2008503101A (ja) 2008-01-31
EP1754264A1 (en) 2007-02-21

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Legal Events

Date Code Title Description
B08F Application fees: application dismissed [chapter 8.6 patent gazette]

Free format text: REFENTE AO NAO RECOLHIMENTO DA 8A ANUIDADE.

B08G Application fees: restoration [chapter 8.7 patent gazette]
B07A Technical examination (opinion): publication of technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]