BRPI0511880A - método para fabricar um sensor de imagem, e, sensor de imagem - Google Patents

método para fabricar um sensor de imagem, e, sensor de imagem

Info

Publication number
BRPI0511880A
BRPI0511880A BRPI0511880-8A BRPI0511880A BRPI0511880A BR PI0511880 A BRPI0511880 A BR PI0511880A BR PI0511880 A BRPI0511880 A BR PI0511880A BR PI0511880 A BRPI0511880 A BR PI0511880A
Authority
BR
Brazil
Prior art keywords
image sensor
layer
light
manufacturing
tablet
Prior art date
Application number
BRPI0511880-8A
Other languages
English (en)
Inventor
Joris Maas
Leendert De Bruin
Daniel Willhermus Elis Verbugt
Nicolaas Johannes Anthoni Veen
Eric Cornelis Egbertu Grunsven
Gerardus Lubertus Jaco Reuvers
Erik Harold Groot
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of BRPI0511880A publication Critical patent/BRPI0511880A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

MéTODO PARA FABRICAR UM SENSOR DE IMAGEM, E, SENSOR DE IMAGEM A invenção é relativa a um método para fabricar um sensor de imagem iluminado pelo lado de trás (14), que compreende as etapas de: começando com uma pastilha (2) que tem uma primeira (3) e uma segunda (4) superficies, fornecer regiões de pixel sensíveis à luz (5) que se estendem na pastilha (2) a partir da primeira superfície (3), prender a pastilha (2) sobre um substrato protetor (7) de tal modo que a primeira superfície (3) faceia o substrato protetor, a pastilha compreendendo um substrato de um primeiro material (8) com uma camada ótica transparente (9) e uma camada de material semicondutor (10) na qual o substrato (8) é removido de maneira seletiva da camada de material semicondutor utilizando a camada transparente ótica (9) como camada de interrupção. Para sensores de imagem iluminados pelo lado de trás, luz deve transmitir através da camada semicondutora e penetrar nas regiões de pixel sensíveis à luz (5). Para reduzir perdas de absorção é muito vantajoso que a camada de semicondutor (10) possa é feita relativamente fina com uma boa uniformidade. Devido à espessura reduzida da camada de semicondutor, mais luz pode penetrar nas regiões sensíveis à luz, resultando em um rendimento melhorado do sensor de imagem.
BRPI0511880-8A 2004-06-09 2005-05-12 método para fabricar um sensor de imagem, e, sensor de imagem BRPI0511880A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04102618 2004-06-09
EP04105544 2004-11-05
PCT/IB2005/051560 WO2005122262A1 (en) 2004-06-09 2005-05-12 Method of manufacturing an image sensor and image sensor

Publications (1)

Publication Number Publication Date
BRPI0511880A true BRPI0511880A (pt) 2008-01-15

Family

ID=34967103

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0511880-8A BRPI0511880A (pt) 2004-06-09 2005-05-12 método para fabricar um sensor de imagem, e, sensor de imagem

Country Status (10)

Country Link
US (1) US20080265348A1 (pt)
EP (1) EP1759413A1 (pt)
JP (1) JP2008503097A (pt)
KR (1) KR20070033991A (pt)
BR (1) BRPI0511880A (pt)
CA (1) CA2569775A1 (pt)
MX (1) MXPA06014220A (pt)
RU (1) RU2006147272A (pt)
TW (1) TW200611398A (pt)
WO (1) WO2005122262A1 (pt)

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US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
US7799491B2 (en) 2006-04-07 2010-09-21 Aptina Imaging Corp. Color filter array and imaging device containing such color filter array and method of fabrication
US7611960B2 (en) * 2006-04-24 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer backside alignment
US8704277B2 (en) * 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US7638852B2 (en) * 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US7791170B2 (en) * 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
JP2008205091A (ja) * 2007-02-19 2008-09-04 Fujifilm Corp 電子デバイス及びその製造方法並びに電子デバイス用シリコン基板
US7755123B2 (en) * 2007-08-24 2010-07-13 Aptina Imaging Corporation Apparatus, system, and method providing backside illuminated imaging device
US7999342B2 (en) 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
US8183510B2 (en) * 2008-02-12 2012-05-22 Omnivision Technologies, Inc. Image sensor with buried self aligned focusing element
US8097929B2 (en) * 2008-05-23 2012-01-17 Chia-Sheng Lin Electronics device package and fabrication method thereof
US7838956B2 (en) * 2008-12-17 2010-11-23 Eastman Kodak Company Back illuminated sensor with low crosstalk
FR2949173A1 (fr) * 2009-08-12 2011-02-18 St Microelectronics Sa Capteur d'images eclaire par la face arriere protege des rayons infrarouges
US8318580B2 (en) 2010-04-29 2012-11-27 Omnivision Technologies, Inc. Isolating wire bonding in integrated electrical components
US8748946B2 (en) 2010-04-29 2014-06-10 Omnivision Technologies, Inc. Isolated wire bond in integrated electrical components
US8507962B2 (en) 2010-10-04 2013-08-13 International Business Machines Corporation Isolation structures for global shutter imager pixel, methods of manufacture and design structures
US8624342B2 (en) * 2010-11-05 2014-01-07 Invensas Corporation Rear-face illuminated solid state image sensors
US8466000B2 (en) 2011-04-14 2013-06-18 United Microelectronics Corp. Backside-illuminated image sensor and fabricating method thereof
US20130010165A1 (en) 2011-07-05 2013-01-10 United Microelectronics Corp. Optical micro structure, method for fabricating the same and applications thereof
US9312292B2 (en) 2011-10-26 2016-04-12 United Microelectronics Corp. Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) 2011-12-01 2012-11-27 United Microelectronics Corp. Method for fabricating semiconductor device
US8815102B2 (en) 2012-03-23 2014-08-26 United Microelectronics Corporation Method for fabricating patterned dichroic film
US9401441B2 (en) 2012-06-14 2016-07-26 United Microelectronics Corporation Back-illuminated image sensor with dishing depression surface
US8779344B2 (en) 2012-07-11 2014-07-15 United Microelectronics Corp. Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
US8828779B2 (en) 2012-11-01 2014-09-09 United Microelectronics Corp. Backside illumination (BSI) CMOS image sensor process
US8779484B2 (en) 2012-11-29 2014-07-15 United Microelectronics Corp. Image sensor and process thereof
JP6182909B2 (ja) * 2013-03-05 2017-08-23 株式会社リコー 有機ｅｌ発光装置の製造方法
US9279923B2 (en) 2013-03-26 2016-03-08 United Microelectronics Corporation Color filter layer and method of fabricating the same
US9160949B2 (en) 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
US9537040B2 (en) 2013-05-09 2017-01-03 United Microelectronics Corp. Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
US9129876B2 (en) 2013-05-28 2015-09-08 United Microelectronics Corp. Image sensor and process thereof
US9496304B2 (en) 2013-08-15 2016-11-15 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
US9054007B2 (en) 2013-08-15 2015-06-09 Omnivision Technologies, Inc. Image sensor pixel cell with switched deep trench isolation structure
US9054106B2 (en) 2013-11-13 2015-06-09 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9841319B2 (en) 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
US10580789B2 (en) * 2017-07-10 2020-03-03 Macronix International Co., Ltd. Semiconductor device having etching control layer in substrate and method of fabricating the same
WO2021198839A1 (en) * 2020-03-31 2021-10-07 National Research Council Of Canada Short range infrared imaging systems
TWI730799B (zh) * 2020-06-04 2021-06-11 力晶積成電子製造股份有限公司 影像感測器的製造方法及對準標記結構

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Also Published As

Publication number Publication date
CA2569775A1 (en) 2005-12-22
US20080265348A1 (en) 2008-10-30
KR20070033991A (ko) 2007-03-27
EP1759413A1 (en) 2007-03-07
JP2008503097A (ja) 2008-01-31
MXPA06014220A (es) 2007-05-04
RU2006147272A (ru) 2008-07-20
WO2005122262A1 (en) 2005-12-22
TW200611398A (en) 2006-04-01

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]