BR9507827A - Célula de memória de quatro transistores pseudo-estática - Google Patents

Célula de memória de quatro transistores pseudo-estática

Info

Publication number
BR9507827A
BR9507827A BR9507827A BR9507827A BR9507827A BR 9507827 A BR9507827 A BR 9507827A BR 9507827 A BR9507827 A BR 9507827A BR 9507827 A BR9507827 A BR 9507827A BR 9507827 A BR9507827 A BR 9507827A
Authority
BR
Brazil
Prior art keywords
pseudo
memory cell
transistors
static
static transistors
Prior art date
Application number
BR9507827A
Other languages
English (en)
Inventor
Moty Mehalel
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of BR9507827A publication Critical patent/BR9507827A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
BR9507827A 1994-06-01 1995-05-24 Célula de memória de quatro transistores pseudo-estática BR9507827A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/252,320 US5475633A (en) 1994-06-01 1994-06-01 Cache memory utilizing pseudo static four transistor memory cell
PCT/US1995/006771 WO1995033265A1 (en) 1994-06-01 1995-05-24 Pseudo static four-transistor memory cell

Publications (1)

Publication Number Publication Date
BR9507827A true BR9507827A (pt) 1997-09-16

Family

ID=22955534

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9507827A BR9507827A (pt) 1994-06-01 1995-05-24 Célula de memória de quatro transistores pseudo-estática

Country Status (8)

Country Link
US (1) US5475633A (pt)
JP (1) JPH10501363A (pt)
KR (1) KR100265220B1 (pt)
CN (1) CN1093306C (pt)
AU (1) AU2654795A (pt)
BR (1) BR9507827A (pt)
DE (1) DE19580583C2 (pt)
WO (1) WO1995033265A1 (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5881010A (en) * 1997-05-15 1999-03-09 Stmicroelectronics, Inc. Multiple transistor dynamic random access memory array architecture with simultaneous refresh of multiple memory cells during a read operation
US6040991A (en) * 1999-01-04 2000-03-21 International Business Machines Corporation SRAM memory cell having reduced surface area
US6188629B1 (en) 1999-11-05 2001-02-13 Cecil H. Kaplinsky Low power, static content addressable memory
US6583459B1 (en) * 2000-06-30 2003-06-24 Stmicroelectronics, Inc. Random access memory cell and method for fabricating same
US7218837B2 (en) 2000-09-25 2007-05-15 Victor Company Of Japan, Ltd. Program-signal recording and reproducing apparatus
US6614124B1 (en) 2000-11-28 2003-09-02 International Business Machines Corporation Simple 4T static ram cell for low power CMOS applications
US6529421B1 (en) 2001-08-28 2003-03-04 Micron Technology, Inc. SRAM array with temperature-compensated threshold voltage
US6584030B2 (en) * 2001-08-28 2003-06-24 Micron Technology, Inc. Memory circuit regulation system and method
US20030198069A1 (en) * 2002-04-22 2003-10-23 Afghahi Morteza Cyrus Dense content addressable memory cell
US6751112B2 (en) * 2002-04-22 2004-06-15 Broadcom Corporation Dense content addressable memory cell
US6909623B2 (en) 2002-04-22 2005-06-21 Broadcom Corporation Dense content addressable memory cell
KR100482766B1 (ko) * 2002-07-16 2005-04-14 주식회사 하이닉스반도체 메모리 소자의 컬럼 선택 제어 신호 발생 회로
JP4357249B2 (ja) 2003-09-22 2009-11-04 株式会社ルネサステクノロジ 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307095A (ja) * 1988-06-01 1989-12-12 Mitsubishi Electric Corp 不揮発性ｃａｍ
US5020028A (en) * 1989-08-07 1991-05-28 Standard Microsystems Corporation Four transistor static RAM cell
US5068825A (en) * 1990-06-29 1991-11-26 Texas Instruments Incorporated Memory cell circuit and operation thereof
JPH04233642A (ja) * 1990-07-27 1992-08-21 Dell Usa Corp キャッシュアクセスと並列的にメモリアクセスを行なうプロセッサ及びそれに用いられる方法

Also Published As

Publication number Publication date
DE19580583C2 (de) 2001-10-25
US5475633A (en) 1995-12-12
CN1149926A (zh) 1997-05-14
KR100265220B1 (ko) 2000-10-02
CN1093306C (zh) 2002-10-23
AU2654795A (en) 1995-12-21
DE19580583T1 (de) 1997-05-22
KR970703034A (ko) 1997-06-10
WO1995033265A1 (en) 1995-12-07
JPH10501363A (ja) 1998-02-03

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Legal Events

Date Code Title Description
FB36 Technical and formal requirements: requirement - article 36 of industrial property law
FF Decision: intention to grant
FG9A Patent or certificate of addition granted
B24H Lapse because of non-payment of annual fees (definitively: art 78 iv lpi)
B24F Patent annual fee: publication cancelled

Free format text: ANULADA A PUBLICACAO CODIGO 24.8 NA RPI NO 2257 DE 08/04/2014 POR TER SIDO INDEVIDA.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE AS 16A, 17A, 18A, 19A E 20A ANUIDADES.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2606 DE 15-12-2020 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.